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BUH100AJ

Onsemi

BUH100AJ by Onsemi

The Onsemi BUH100AJ is a NPN Power BJT with max. Vce of 400V and Ic of 10A, ideal for switching applications. Featuring hFE of 6 and fT of 23MHz, it comes in a plastic/epoxy package with through-hole terminals for easy mounting. Suitable for high-power electronic circuits requiring efficient switching capabilities at temperatures up to 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,455 parts In-Stock

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2,455

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Vyrian

USA . 518 parts In-Stock

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518

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TANS Electronics

Latvia . 7,602 parts In-Stock

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7,602

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Problanco Electronics

Mexico . 5,249 parts In-Stock

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5,249

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Kulean Microsystems

USA . 4,965 parts In-Stock

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4,965

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SupplyDigital Components

Austria . 1,388 parts In-Stock

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Corphita

USA . 1,182 parts In-Stock

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Northwest PG Solutions

USA . 1,157 parts In-Stock

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UHIMA Technologies

Türkiye . 389 parts In-Stock

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389

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Corohmni

South Africa . 75 parts In-Stock

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Native Components

USA . 41 parts In-Stock

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Overview

The BUH100AJ by Onsemi is a top-quality Power Bipolar Junction Transistor that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this NPN transistor is perfect for switching applications. Its plastic/epoxy package body material ensures durability, while its high collector-emitter voltage of 400V and maximum collector current of 10A make it suitable for a wide range of uses. With a minimum DC current gain of 6 and a nominal transition frequency of 23 MHz, the BUH100AJ provides outstanding value and benefits to customers looking for a high-performance transistor solution.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and helps in protecting the transistor from environmental factors, making it suitable for a wide range of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering versatility in circuit design.

Configuration: SINGLE

Simplifies circuit design and makes it easier to integrate into existing systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing efficient performance in on/off control of circuits.

Package Shape: RECTANGULAR

Allows for easy mounting and integration into circuit boards or other electronic devices.

No. of Terminals: 3

Simplifies the connection process and reduces the chances of wiring errors.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures without compromising performance, making it suitable for industrial applications.

Maximum Collector-Emitter Voltage: 400 V

Allows for handling high voltage applications effectively and safely.

Maximum Collector Current (IC): 10 A

Can handle high current applications, providing reliable performance in power circuits.

Nominal Transition Frequency (fT): 23 MHz

High transition frequency allows for fast switching speeds, ideal for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUH100AJ attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

6

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUH100AJ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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