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BUH150AF

Onsemi

BUH150AF by Onsemi

BUH150AF by Onsemi is a NPN Power BJT with 400V VCEO and 15A IC, ideal for switching applications. With hFE of 4 and fT of 23MHz, it operates up to 150 °C. This transistor comes in a plastic/epoxy package with through-hole terminals for easy mounting.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,903 parts In-Stock

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Digiode

USA . 1,050 parts In-Stock

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TANS Electronics

Latvia . 7,980 parts In-Stock

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Problanco Electronics

Mexico . 7,656 parts In-Stock

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SupplyDigital Components

Austria . 6,901 parts In-Stock

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Kulean Microsystems

USA . 5,459 parts In-Stock

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Corphita

USA . 2,193 parts In-Stock

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Northwest PG Solutions

USA . 1,926 parts In-Stock

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UHIMA Technologies

Türkiye . 559 parts In-Stock

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Native Components

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Corohmni

South Africa . 72 parts In-Stock

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Overview

Boost your electronics projects with the BUH150AF by Onsemi, a high-quality Power Bipolar Junction Transistor designed for switching applications. Made by the trusted manufacturer Onsemi, this NPN transistor offers reliability and performance. Its plastic/epoxy package body ensures durability, while its flange mount style allows for easy installation. With a maximum collector-emitter voltage of 400V and a maximum collector current of 15A, the BUH150AF delivers the power you need. Upgrade your designs today with this versatile component that provides value and efficiency to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures that the transistor is lightweight and durable, making it ideal for various applications.

Polarity or Channel Type: NPN

The NPN polarity allows for easy integration with other NPN components in a circuit, providing flexibility in design and compatibility.

Configuration: SINGLE

The single configuration simplifies the circuit design and assembly process, reducing complexity and making it easier to work with.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast switching speeds and efficient performance, making it suitable for various industrial and electronic devices.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and space-efficient placement on a circuit board, optimizing the use of available space.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides secure and stable connections, ensuring reliable performance and ease of soldering during assembly.

Maximum Collector-Emitter Voltage: 400 V

With a high maximum collector-emitter voltage of 400 V, this transistor can handle higher voltage applications with ease, offering versatility and reliability.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUH150AF attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

4

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUH150AF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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