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BUH100BC

Onsemi

BUH100BC by Onsemi

BUH100BC by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 400V, ideal for switching applications. With a max. collector current of 10A and min. DC current gain of 6, it operates at up to 150 °C making it suitable for high-power tasks in various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,112 parts In-Stock

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Digiode

USA . 508 parts In-Stock

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508

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Native Components

USA . 66 parts In-Stock

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$65.965

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$63.326

66

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$63.326

Northwest PG Solutions

USA . 147 parts In-Stock

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$72.561

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TANS Electronics

Latvia . 7,867 parts In-Stock

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Kulean Microsystems

USA . 7,546 parts In-Stock

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Problanco Electronics

Mexico . 4,773 parts In-Stock

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SupplyDigital Components

Austria . 2,751 parts In-Stock

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Corphita

USA . 2,152 parts In-Stock

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UHIMA Technologies

Türkiye . 299 parts In-Stock

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Corohmni

South Africa . 115 parts In-Stock

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Overview

Unlock the power of high-quality performance with the BUH100BC by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch Power Bipolar Junction Transistors that are perfect for switching applications. With a maximum collector-emitter voltage of 400V and a maximum collector current of 10A, this NPN transistor offers reliability and efficiency like no other. Whether you're looking to optimize your electronic circuit designs or enhance your switching systems, the BUH100BC provides the value, benefits, and advantages you need to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material makes the transistor lightweight and durable, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making this product versatile.

Configuration: SINGLE

The single configuration simplifies circuit design and makes the transistor easy to use for various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers high performance and reliability in such scenarios.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and placement on a circuit board, enhancing convenience during assembly.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides secure and reliable connections, making the transistor suitable for rugged environments.

No. of Terminals: 3

With three terminals, this transistor can be easily integrated into circuits and offers flexibility in connectivity options.

Package Style (Meter): FLANGE MOUNT

The flange mount package style allows for easy and stable mounting on a heat sink, improving thermal management for enhanced performance.

Minimum DC Current Gain (hFE): 6

With a minimum DC current gain of 6, this transistor provides consistent amplification and switching capabilities in various circuit designs.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C ensures reliable performance even in demanding environments with elevated temperatures.

Maximum Collector-Emitter Voltage: 400 V

With a high maximum collector-emitter voltage, this transistor can handle relatively high voltage levels, suitable for a wide range of applications.

Transistor Element Material: SILICON

Silicon transistors offer high performance, low noise, and reliability, making this product a solid choice for various electronic applications.

Maximum Collector Current (IC): 10 A

With a maximum collector current of 10A, this transistor can handle high currents without compromising performance or reliability.

Terminal Finish: TIN LEAD

The tin lead terminal finish ensures good solderability and corrosion resistance, prolonging the lifespan of the transistor.

Terminal Position: SINGLE

The single terminal position simplifies circuit connection and layout, making it easier to integrate into electronic designs.

Case Connection: COLLECTOR

The case connection at the collector terminal provides easy access for heat dissipation and thermal management, ensuring consistent performance.

Nominal Transition Frequency (fT): 23 MHz

With a high nominal transition frequency of 23 MHz, this transistor offers fast switching speeds and is suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUH100BC attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

6

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUH100BC Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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