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BUH100AU

Onsemi

BUH100AU by Onsemi

The Onsemi BUH100AU is a NPN BJT transistor with 400V VCE, 10A IC, and 23MHz fT. Ideal for switching applications, it comes in a plastic package with through-hole terminals. Operating up to 150 °C, this single configuration transistor is suitable for various power electronics projects.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,439 parts In-Stock

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1,439

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Vyrian

USA . 277 parts In-Stock

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277

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Distributors (Availability)

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Native Components

USA . 346 parts In-Stock

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$0.900

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346

$0.900

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Northwest PG Solutions

USA . 779 parts In-Stock

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$0.990

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779

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Problanco Electronics

Mexico . 6,653 parts In-Stock

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6,653

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TANS Electronics

Latvia . 3,418 parts In-Stock

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Corphita

USA . 1,627 parts In-Stock

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1,627

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SupplyDigital Components

Austria . 602 parts In-Stock

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602

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UHIMA Technologies

Türkiye . 523 parts In-Stock

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523

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Kulean Microsystems

USA . 387 parts In-Stock

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Corohmni

South Africa . 184 parts In-Stock

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Overview

Unlock the power of reliable and efficient performance with the BUH100AU by Onsemi. As a leading manufacturer in the industry, Onsemi delivers unparalleled quality and cutting-edge technology in the Power Bipolar Junction Transistor (BJT) category. Ideal for switching applications, this NPN transistor offers a single configuration in a durable plastic/epoxy package. With a maximum collector-emitter voltage of 400V and a maximum collector current of 10A, this product guarantees optimal functionality and durability. Trust Onsemi to provide the highest standards in transistor technology, ensuring that your projects run smoothly and efficiently every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation and durability for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are widely used in amplification and switching circuits, offering versatile functionality.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making it easy to use in different electronic setups.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in tasks that require rapid switching on and off.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and placement in circuits, optimizing space utilization.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide sturdy connections and are compatible with standard PCB assembly processes.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures stability and performance under various environmental conditions.

Maximum Collector-Emitter Voltage: 400 V

High collector-emitter voltage allows for handling higher voltages, expanding the range of applications where the transistor can be used.

Maximum Collector Current (IC): 10 A

High collector current rating enables the transistor to handle larger currents, making it suitable for power applications.

Nominal Transition Frequency (fT): 23 MHz

High transition frequency indicates fast response times, making the transistor ideal for high-frequency signal processing.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUH100AU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

6

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUH100AU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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