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BUH100BD

Onsemi

BUH100BD by Onsemi

BUH100BD by Onsemi is a NPN Power BJT with max. VCE of 400V and IC of 10A. It has a min. hFE of 6, making it ideal for switching applications at up to 150 °C. The transistor comes in a plastic/epoxy package with through-hole terminals, suitable for flange mount configurations.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 928 parts In-Stock

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Vyrian

USA . 419 parts In-Stock

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419

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Distributors (Availability)

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Native Components

USA . 658 parts In-Stock

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$0.069

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$0.066

658

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$0.066

Northwest PG Solutions

USA . 1,410 parts In-Stock

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$0.076

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$0.067

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$0.067

Kulean Microsystems

USA . 7,645 parts In-Stock

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7,645

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Problanco Electronics

Mexico . 5,326 parts In-Stock

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5,326

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TANS Electronics

Latvia . 5,182 parts In-Stock

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SupplyDigital Components

Austria . 4,019 parts In-Stock

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4,019

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UHIMA Technologies

Türkiye . 629 parts In-Stock

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Corphita

USA . 506 parts In-Stock

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Corohmni

South Africa . 143 parts In-Stock

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Overview

Unleash the power of innovation with the BUH100BD by Onsemi, a top-quality Power Bipolar Junction Transistor designed for switching applications. Manufactured by Onsemi, a leader in semiconductor technology, this NPN transistor offers customers reliability and efficiency. With a maximum collector-emitter voltage of 400 V and a collector current of 10 A, the BUH100BD provides superior performance in a variety of electronic devices. Say goodbye to overheating and hello to seamless operation with this cutting-edge transistor. Elevate your projects with the BUH100BD by Onsemi today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation and protection for the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making this product versatile.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to use in various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and integration into circuit boards.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering during assembly.

No. of Terminals: 3

Three terminals allow for easy connection in circuits and provide necessary functionality.

Package Style (Meter): FLANGE MOUNT

Flange mount package style offers stability and ease of mounting in various applications.

Minimum DC Current Gain (hFE): 6

A minimum DC current gain of 6 ensures proper amplification in circuits.

Maximum Operating Temperature: 150 °C

High maximum operating temperature of 150 °C ensures reliable performance in various environments.

Maximum Collector-Emitter Voltage: 400 V

High maximum collector-emitter voltage of 400V allows for use in high voltage applications.

Transistor Element Material: SILICON

Silicon material ensures high performance and durability of the transistor.

Maximum Collector Current (IC): 10 A

High maximum collector current of 10A allows for use in high-power applications.

Terminal Finish: TIN LEAD

Tin-lead finish provides good electrical conductivity and solderability for reliable connections.

Terminal Position: SINGLE

Single terminal position simplifies connection and integration into circuits.

Case Connection: COLLECTOR

Collector case connection ensures proper functionality in circuit designs.

Nominal Transition Frequency (fT): 23 MHz

High nominal transition frequency of 23MHz allows for fast switching speeds in applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUH100BD attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

6

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUH100BD Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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