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BUH100AN

Onsemi

BUH100AN by Onsemi

BUH100AN by Onsemi is a NPN BJT transistor with 400V VCE, 10A IC, and 23MHz fT. Ideal for switching applications, it has a single configuration in a plastic/epoxy package suitable for flange mount installations. Operating up to 150 °C, it offers a min hFE of 6 and through-hole terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,675 parts In-Stock

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Vyrian

USA . 1,346 parts In-Stock

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1,346

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Distributors (Availability)

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Native Components

USA . 732 parts In-Stock

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$28.582

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732

$28.582

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Northwest PG Solutions

USA . 71 parts In-Stock

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$31.441

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$28.297

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71

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$28.297

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Problanco Electronics

Mexico . 8,385 parts In-Stock

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8,385

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Kulean Microsystems

USA . 8,166 parts In-Stock

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8,166

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TANS Electronics

Latvia . 6,940 parts In-Stock

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6,940

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SupplyDigital Components

Austria . 6,187 parts In-Stock

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6,187

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Corphita

USA . 1,183 parts In-Stock

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UHIMA Technologies

Türkiye . 357 parts In-Stock

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Corohmni

South Africa . 275 parts In-Stock

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Overview

Experience the reliability and performance of the BUH100AN power bipolar junction transistor by Onsemi. With a focus on quality, Onsemi has established itself as a trusted manufacturer in the industry. Ideal for switching applications, this NPN transistor offers customers the value of efficiency and durability. Whether you're looking to enhance your electronic projects or streamline your manufacturing process, the BUH100AN delivers the benefits of high collector current, low DC current gain, and a wide operating temperature range. Upgrade your designs with this versatile component and see the difference for yourself.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and mechanical protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering good voltage control and current gain.

Configuration: SINGLE

Single configuration transistors are easy to use and integrate into circuits, making them a convenient choice for circuit design.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides efficient and reliable performance in on/off control circuits.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and placement in circuits, saving space and ensuring a compact design.

Terminal Form: THROUGH-HOLE

Through-hole terminals make soldering and connection easier, providing a secure and stable connection in circuit boards.

No. of Terminals: 3

Having 3 terminals allows for flexibility in circuit connection and configuration, enabling various circuit designs and applications.

Maximum Operating Temperature: 150 °C

With a high operating temperature, this transistor can withstand and operate in demanding environments without compromising performance.

Maximum Collector-Emitter Voltage: 400 V

The high maximum voltage rating allows for safe operation in high voltage circuits, ensuring reliability and durability.

Maximum Collector Current (IC): 10 A

The high collector current rating allows for efficient power handling and operation in high current circuits, making it suitable for demanding applications.

Nominal Transition Frequency (fT): 23 MHz

With a high transition frequency, this transistor can operate at high speeds, making it suitable for high-frequency switching and amplification applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUH100AN attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

6

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUH100AN Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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