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BUH100BA

Onsemi

BUH100BA by Onsemi

BUH100BA by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 400V, ideal for switching applications. Featuring a min. DC current gain of 6 and max. collector current of 10A, it operates at up to 150 °C. Its through-hole terminal form and flange mount package style make it suitable for various power electronics projects.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,724 parts In-Stock

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Vyrian

USA . 1,617 parts In-Stock

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Native Components

USA . 657 parts In-Stock

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$0.664

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657

$0.664

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Northwest PG Solutions

USA . 2,048 parts In-Stock

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$0.730

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$0.730

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SupplyDigital Components

Austria . 5,588 parts In-Stock

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Kulean Microsystems

USA . 5,536 parts In-Stock

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5,536

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Problanco Electronics

Mexico . 2,679 parts In-Stock

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Corphita

USA . 2,439 parts In-Stock

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TANS Electronics

Latvia . 1,922 parts In-Stock

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UHIMA Technologies

Türkiye . 700 parts In-Stock

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Corohmni

South Africa . 236 parts In-Stock

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Overview

Unlock the power of reliable and efficient switching with the BUH100BA by Onsemi. Crafted by a trusted manufacturer in the industry, this Power Bipolar Junction Transistor offers unparalleled quality and performance for various applications. With a maximum collector-emitter voltage of 400V and a collector current of 10A, this NPN transistor is designed to handle high-power tasks with ease. Its single configuration and through-hole terminals make installation a breeze. Trust in the BUH100BA to deliver superior functionality and value for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, ensuring longevity and ease of handling during installation.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile for a variety of applications.

Configuration: SINGLE

The single configuration simplifies the design and installation process, reducing complexity and potential points of failure.

Transistor Application: SWITCHING

Designed for switching applications, this transistor allows for efficient control of current flow, making it ideal for power management in electronic circuits.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and integration into circuit boards, facilitating efficient circuit design.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure and reliable connection to the circuit board, reducing the risk of disconnection or poor connections.

No. of Terminals: 3

The three terminals provide the necessary connections for the transistor to function effectively in the circuit, ensuring proper operation.

Package Style (Meter): FLANGE MOUNT

The flange mount package style allows for easy mounting and secure attachment to a heat sink, improving thermal performance and reliability.

Minimum DC Current Gain (hFE): 6

A minimum DC current gain of 6 ensures efficient amplification of current in the circuit, enhancing the transistor's overall performance.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high-temperature environments, ensuring reliable operation under varying conditions.

Maximum Collector-Emitter Voltage: 400 V

The high maximum collector-emitter voltage of 400V allows for high-voltage applications, making this transistor suitable for a wide range of electronic systems.

Transistor Element Material: SILICON

Silicon is a commonly used semiconductor material known for its reliability and stability, ensuring consistent performance and longevity of the transistor.

Maximum Collector Current (IC): 10 A

With a maximum collector current of 10A, this transistor can handle high current loads, making it suitable for power switching applications.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides a secure and reliable connection, preventing oxidation and ensuring optimal electrical conductivity.

Terminal Position: SINGLE

Having a single terminal position simplifies the installation process, reducing assembly time and potential errors in circuit wiring.

Case Connection: COLLECTOR

The case connection at the collector terminal allows for efficient heat dissipation, helping to maintain the transistor's temperature within safe operating limits.

Nominal Transition Frequency (fT): 23 MHz

A high nominal transition frequency of 23 MHz indicates fast switching speeds, making this transistor suitable for high-frequency applications requiring rapid response times.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUH100BA attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

6

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUH100BA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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