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NJL3281D

Onsemi

NJL3281D by Onsemi

NJL3281D by Onsemi is a NPN BJT with 260V VCEO, 15A IC, and 200W Ptot. Ideal for amplifier applications due to its single configuration with built-in diode. Package style is flange mount with through-hole terminals.

Median Price

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Lifecycle Status

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Vyrian

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Pegasus Components GmbH

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SPM Sales

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LittleDiode

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Prism Electronics

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AZTECH Wire

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TANS Electronics

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Kulean Microsystems

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SupplyDigital Components

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Problanco Electronics

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Overview

Unleash the power of innovation with the NJL3281D by Onsemi, a high-quality Power Bipolar Junction Transistor designed to amplify signals with precision and efficiency. Manufactured by industry leader Onsemi, this NPN transistor offers a myriad of applications in the field of amplification. With a maximum power dissipation of 200W and a minimum DC current gain of 45, this transistor delivers exceptional performance and reliability. Elevate your projects to new heights with the NJL3281D, where quality meets value seamlessly.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package body material provides good insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: NPN

NPN polarity allows for easy integration in most circuit designs, making it a versatile choice for various applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and saves space, making the transistor more efficient and cost-effective.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring high performance and accuracy in signal amplification.

Package Shape: RECTANGULAR

Rectangular package shape facilitates easy mounting and handling, enhancing the overall user experience.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering, ensuring reliable performance in various environments.

Maximum Power Dissipation (Abs): 200 W

High power dissipation capability allows the transistor to handle large power loads without the risk of overheating or damage.

Package Style (Meter): FLANGE MOUNT

Flange mount package style offers mechanical stability and easy installation, making it suitable for industrial applications.

Minimum DC Current Gain (hFE): 45

Minimum DC current gain of 45 ensures consistent and reliable amplification performance in various operating conditions.

Maximum Operating Temperature: 150 °C

High maximum operating temperature of 150 °C allows the transistor to operate safely in demanding thermal environments.

Maximum Collector-Emitter Voltage: 260 V

High maximum collector-emitter voltage rating of 260V provides robustness and reliability in voltage switching applications.

Transistor Element Material: SILICON

Silicon material for the transistor element offers excellent electrical properties and reliability for long-term performance.

Maximum Collector Current (IC): 15 A

Maximum collector current of 15A ensures the transistor can handle high current loads without the risk of damage or performance degradation.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and conductivity, ensuring secure connections and low contact resistance.

Terminal Position: SINGLE

Single terminal position simplifies installation and enhances reliability by reducing the risk of misconnection or short circuits.

Peak Reflow Temperature °C: 235

High peak reflow temperature of 235 °C allows for reliable and efficient soldering during assembly and rework processes.

Nominal Transition Frequency (fT): 30 MHz

Nominal transition frequency of 30MHz indicates high-speed switching characteristics, making the transistor suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) NJL3281D attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

260 V

Minimum DC Current Gain (hFE):

45

JEDEC-95 Code:

TO-264

JESD-30 Code:

R-PSFM-T5

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

5

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NJL3281D Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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