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NJL3281DG

Onsemi

NJL3281DG by Onsemi

NJL3281DG by Onsemi is a NPN BJT with 200W power dissipation, 260V max collector-emitter voltage, and 15A max collector current. Ideal for amplifier applications due to its single configuration with built-in diode. Operates at up to 150°C, making it suitable for high-power amplification needs.

Median Price

$7.065

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 75 parts In-Stock

1+ parts

$6.800

100+ parts

$3.420

1k+ parts

$3.250

10k+ parts

-

75

$6.800

$3.420

$3.250

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Element14

Singapore . 171 parts In-Stock

1+ parts

$7.330

100+ parts

$5.410

1k+ parts

$3.880

10k+ parts

$3.550

171

$7.330

$5.410

$3.880

$3.550

Farnell

UK . 508 parts In-Stock

1+ parts

$8.415

100+ parts

$5.173

1k+ parts

$5.070

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-

508

$8.415

$5.173

$5.070

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DigiKey

USA . 4,268 parts In-Stock

1+ parts

$8.500

100+ parts

$4.270

1k+ parts

$3.714

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-

4,268

$8.500

$4.270

$3.714

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Mouser Electronics

USA . 268 parts In-Stock

1+ parts

$8.500

100+ parts

$3.710

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-

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268

$8.500

$3.710

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RS (Exports)

UK . 2,632 parts In-Stock

1+ parts

-

100+ parts

$5.005

1k+ parts

$4.480

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2,632

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$5.005

$4.480

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Avnet

USA . 175 parts In-Stock

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175

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Arrow

USA . 75 parts In-Stock

1+ parts

-

100+ parts

$3.702

1k+ parts

$3.693

10k+ parts

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75

-

$3.702

$3.693

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Verical

USA . 13 parts In-Stock

1+ parts

-

100+ parts

$6.266

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-

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13

-

$6.266

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$5.300

100+ parts

-

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-

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300

$5.300

-

-

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Digiode

USA . 1,940 parts In-Stock

1+ parts

$5.520

100+ parts

-

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1,940

$5.520

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-

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Component Electronics Inc.

Canada . 2 parts In-Stock

1+ parts

$6.150

100+ parts

$4.620

1k+ parts

$4.000

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-

2

$6.150

$4.620

$4.000

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TME

Poland . 14 parts In-Stock

1+ parts

$6.640

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-

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14

$6.640

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Vyrian

USA . 769 parts In-Stock

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769

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Chip Stock

USA . 390 parts In-Stock

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390

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Prism Electronics

USA . 8 parts In-Stock

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8

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 3,808 parts In-Stock

1+ parts

$1.370

100+ parts

-

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-

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3,808

$1.370

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-

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Benley Electronics

USA . 4 parts In-Stock

1+ parts

$2.000

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-

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4

$2.000

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Ampacity Inc.

Singapore . 963 parts In-Stock

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$3.150

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-

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963

$3.150

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Semicontronic

India . 839 parts In-Stock

1+ parts

$3.150

100+ parts

$3.071

1k+ parts

$3.056

10k+ parts

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839

$3.150

$3.071

$3.056

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Corohmni

South Africa . 351 parts In-Stock

1+ parts

$3.702

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-

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351

$3.702

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Corphita

USA . 1,637 parts In-Stock

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$5.229

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1,637

$5.229

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Continental Prestige Electronics

USA . 4,798 parts In-Stock

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$5.300

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$5.194

4,798

$5.300

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$5.194

Microchip USA

USA . 9,003 parts In-Stock

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$19.824

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9,003

$19.824

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Problanco Electronics

Mexico . 8,345 parts In-Stock

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8,345

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TANS Electronics

Latvia . 7,942 parts In-Stock

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SupplyDigital Components

Austria . 6,987 parts In-Stock

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Perfect Parts

USA . 4,185 parts In-Stock

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Lixinc

USA . 3,597 parts In-Stock

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3,597

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Kulean Microsystems

USA . 3,383 parts In-Stock

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Argo Parts USA

USA . 1,786 parts In-Stock

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1,786

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Netroflash

USA . 1,000 parts In-Stock

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$5.194

1k+ parts

$5.035

10k+ parts

$4.929

1,000

-

$5.194

$5.035

$4.929

UHIMA Technologies

Türkiye . 160 parts In-Stock

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160

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Kepictronics

USA . 138 parts In-Stock

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138

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Overview

Elevate your electronic projects with the NJL3281DG by Onsemi. As a leading manufacturer of high-quality Power Bipolar Junction Transistors (BJT), Onsemi delivers a product that guarantees superior performance and reliability. This NPN transistor with a built-in diode is perfect for amplifier applications, providing a seamless integration into your designs. With a maximum power dissipation of 200 W and a maximum collector current of 15 A, this transistor offers unmatched efficiency and durability. Trust Onsemi to provide you with the tools you need to bring your projects to life.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the transistor easy to handle and long-lasting.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor versatile for various applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design, saving time and effort for engineers.

Transistor Application: AMPLIFIER

Designed specifically for amplification purposes, this transistor ensures optimal performance in amplifier circuits.

Package Shape: RECTANGULAR

The rectangular shape allows for easy integration into circuit designs, saving space and enhancing overall functionality.

Terminal Form: THROUGH-HOLE

Through-hole terminals make soldering and connecting the transistor to a circuit board a breeze.

No. of Terminals: 5

With 5 terminals, this transistor offers flexibility in circuit design and connectivity options.

Maximum Power Dissipation (Abs): 200 W

The high power dissipation capability ensures the transistor can handle high voltage and current loads without overheating.

Package Style (Meter): FLANGE MOUNT

The flange mount package style enables secure mounting and efficient heat dissipation in various applications.

Minimum DC Current Gain (hFE): 45

The minimum DC current gain of 45 ensures consistent and reliable amplification performance.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperatures without performance degradation.

Maximum Collector-Emitter Voltage: 260 V

The high collector-emitter voltage rating allows for the transistor to be used in a wide range of voltage applications.

Transistor Element Material: SILICON

Silicon transistors offer high performance, low noise, and reliability, making them ideal for critical applications.

Maximum Collector Current (IC): 15 A

The high collector current rating allows the transistor to handle large current loads without failure.

Terminal Finish: MATTE TIN

The matte tin finish provides excellent solderability and corrosion resistance for long-lasting connections.

Terminal Position: SINGLE

The single terminal position simplifies installation and maintenance of the transistor in electronic circuits.

Nominal Transition Frequency (fT): 30 MHz

With a high nominal transition frequency, this transistor can efficiently amplify high-frequency signals with minimal distortion.

Technical Specifications

Power Bipolar Junction Transistors (BJT) NJL3281DG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

260 V

Minimum DC Current Gain (hFE):

45

JESD-30 Code:

R-PSFM-T5

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

5

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NJL3281DG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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