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NJL1302D

Onsemi

NJL1302D by Onsemi

NJL1302D by Onsemi is a PNP BJT with 200W power dissipation, 260V max collector-emitter voltage, and 15A max collector current. Ideal for amplifier applications due to its single configuration with built-in diode. Features include 45 min DC current gain (hFE) and 30MHz nominal transition frequency.

Median Price

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Lifecycle Status

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5

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1k+

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Digiode

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Vyrian

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Nova Conductors

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Pegasus Components GmbH

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LittleDiode

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AZTECH Wire

Italy . 814 parts In-Stock

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Ampacity Inc.

Singapore . 421 parts In-Stock

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Kulean Microsystems

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SupplyDigital Components

Austria . 6,519 parts In-Stock

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Continental Prestige Electronics

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Problanco Electronics

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Argo Parts USA

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TANS Electronics

Latvia . 2,233 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 412 parts In-Stock

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Corohmni

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Overview

Upgrade your power applications with the NJL1302D from Onsemi. Manufactured with precision and expertise, this Power Bipolar Junction Transistor offers unparalleled performance and reliability. Whether you're looking to amplify signals or enhance power efficiency, this PNP transistor with a built-in diode is the ideal solution. With a maximum power dissipation of 200 W and a maximum operating temperature of 150°C, this transistor delivers exceptional value and benefits for all your amplifier needs. Trust Onsemi for quality and innovation in every transistor.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, allowing for easier handling and long-term reliability.

Polarity or Channel Type: PNP

The PNP polarity allows for easy integration into circuits where PNP transistors are required, providing compatibility with existing designs.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design by eliminating the need for an external diode, saving space and reducing component count.

Transistor Application: AMPLIFIER

Designed for amplifier applications, this transistor offers high gain and low noise, making it ideal for audio or signal amplification purposes.

Package Shape: RECTANGULAR

The rectangular package shape provides easy mounting and alignment, simplifying the assembly process in circuit board layout.

Terminal Form: THROUGH-HOLE

The through-hole terminals offer secure connections to the circuit board, ensuring reliable electrical connections during operation.

Maximum Power Dissipation (Abs): 200 W

With a high power dissipation capability of 200 W, this transistor can handle large amounts of power without overheating, making it suitable for high-power applications.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides easy mounting on heatsinks or chassis, allowing for efficient heat dissipation in high-power applications.

Minimum DC Current Gain (hFE): 45

The minimum DC current gain of 45 ensures stable and consistent amplification of the input signal, providing reliable performance in amplifier circuits.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperatures without compromising its performance, making it suitable for industrial applications.

Maximum Collector-Emitter Voltage: 260 V

The high maximum collector-emitter voltage of 260 V allows for operation in high-voltage circuits, offering flexibility in circuit design.

Transistor Element Material: SILICON

The use of silicon as the transistor element material provides high performance and reliability, ensuring consistent operation over a wide range of temperatures and voltages.

Maximum Collector Current (IC): 15 A

With a maximum collector current of 15 A, this transistor can handle high current loads, making it suitable for power amplifier applications.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides good solderability and corrosion resistance, ensuring reliable connections and long-term durability in various environments.

Terminal Position: SINGLE

The single terminal position simplifies installation and connection, reducing the risk of errors during assembly and ensuring proper functionality.

Peak Reflow Temperature °C: 235

With a peak reflow temperature of 235°C, this transistor can withstand the soldering process during assembly without damage, ensuring proper functionality after soldering.

Nominal Transition Frequency (fT): 30 MHz

The high nominal transition frequency of 30 MHz allows for fast switching speeds and high-frequency operation, making it suitable for RF applications or high-speed circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) NJL1302D attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

260 V

Minimum DC Current Gain (hFE):

45

JEDEC-95 Code:

TO-264

JESD-30 Code:

R-PSFM-T5

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

5

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NJL1302D Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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