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NJL1302DG

Onsemi

NJL1302DG by Onsemi

NJL1302DG by Onsemi is a PNP BJT with 200W power dissipation, 260V max collector-emitter voltage, and 15A max collector current. Ideal for amplifier applications due to its single configuration with built-in diode. Operates at up to 150°C temperature range in a rectangular package style.

Median Price

$5.350

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 753 parts In-Stock

1+ parts

$5.350

100+ parts

$2.700

1k+ parts

$2.260

10k+ parts

-

753

$5.350

$2.700

$2.260

-

Newark

USA . 435 parts In-Stock

1+ parts

$5.350

100+ parts

$2.590

1k+ parts

-

10k+ parts

-

435

$5.350

$2.590

-

-

Mouser Electronics

USA . 7 parts In-Stock

1+ parts

$6.560

100+ parts

$2.870

1k+ parts

$2.850

10k+ parts

-

7

$6.560

$2.870

$2.850

-

DigiKey

USA . 3,598 parts In-Stock

1+ parts

$6.960

100+ parts

$3.417

1k+ parts

$2.850

10k+ parts

-

3,598

$6.960

$3.417

$2.850

-

Element14

Singapore . 807 parts In-Stock

1+ parts

$9.070

100+ parts

$5.480

1k+ parts

$4.560

10k+ parts

-

807

$9.070

$5.480

$4.560

-

Verical

USA . 10,899 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$3.188

10k+ parts

$3.000

10,899

-

-

$3.188

$3.000

Rochester

USA . 10,899 parts In-Stock

1+ parts

-

100+ parts

$2.850

1k+ parts

$2.550

10k+ parts

$2.400

10,899

-

$2.850

$2.550

$2.400

Avnet

USA . 225 parts In-Stock

1+ parts

-

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-

1k+ parts

-

10k+ parts

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225

-

-

-

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Arrow

USA . 125 parts In-Stock

1+ parts

-

100+ parts

$3.215

1k+ parts

$2.844

10k+ parts

-

125

-

$3.215

$2.844

-

RS (Exports)

UK . 1 parts In-Stock

1+ parts

-

100+ parts

$4.209

1k+ parts

$3.758

10k+ parts

-

1

-

$4.209

$3.758

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,367 parts In-Stock

1+ parts

$3.012

100+ parts

-

1k+ parts

-

10k+ parts

-

2,367

$3.012

-

-

-

Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$4.395

100+ parts

-

1k+ parts

-

10k+ parts

-

300

$4.395

-

-

-

Component Electronics Inc.

Canada . 3 parts In-Stock

1+ parts

$6.150

100+ parts

$4.620

1k+ parts

$4.000

10k+ parts

-

3

$6.150

$4.620

$4.000

-

TME

Poland . 18 parts In-Stock

1+ parts

$6.590

100+ parts

-

1k+ parts

-

10k+ parts

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18

$6.590

-

-

-

Vyrian

USA . 2,886 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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2,886

-

-

-

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IBS Electronics

USA . 1,250 parts In-Stock

1+ parts

-

100+ parts

$4.432

1k+ parts

$4.165

10k+ parts

-

1,250

-

$4.432

$4.165

-

NAC Semi

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

$6.780

1k+ parts

$6.100

10k+ parts

-

1,000

-

$6.780

$6.100

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 3,321 parts In-Stock

1+ parts

$2.310

100+ parts

-

1k+ parts

-

10k+ parts

-

3,321

$2.310

-

-

-

Corphita

USA . 423 parts In-Stock

1+ parts

$2.853

100+ parts

-

1k+ parts

-

10k+ parts

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423

$2.853

-

-

-

Corohmni

South Africa . 242 parts In-Stock

1+ parts

$3.170

100+ parts

-

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-

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242

$3.170

-

-

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Continental Prestige Electronics

USA . 5,065 parts In-Stock

1+ parts

$4.395

100+ parts

-

1k+ parts

-

10k+ parts

$4.307

5,065

$4.395

-

-

$4.307

Argo Parts USA

USA . 3,201 parts In-Stock

1+ parts

$4.395

100+ parts

-

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-

10k+ parts

-

3,201

$4.395

-

-

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Bastille Electronics

Australia . 4,543 parts In-Stock

1+ parts

$4.395

100+ parts

$4.175

1k+ parts

$3.966

10k+ parts

$3.912

4,543

$4.395

$4.175

$3.966

$3.912

Microchip USA

USA . 2,617 parts In-Stock

1+ parts

$20.188

100+ parts

-

1k+ parts

-

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2,617

$20.188

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-

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Lixinc

USA . 9,163 parts In-Stock

1+ parts

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9,163

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Problanco Electronics

Mexico . 7,143 parts In-Stock

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7,143

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Kulean Microsystems

USA . 4,914 parts In-Stock

1+ parts

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4,914

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SupplyDigital Components

Austria . 3,603 parts In-Stock

1+ parts

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100+ parts

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3,603

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-

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TANS Electronics

Latvia . 2,962 parts In-Stock

1+ parts

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100+ parts

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2,962

-

-

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iodParts Technologies Inc.

India . 86 parts In-Stock

1+ parts

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86

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-

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UHIMA Technologies

Türkiye . 6 parts In-Stock

1+ parts

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100+ parts

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6

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Overview

Unlock the power of high-performance amplification with the NJL1302DG by Onsemi. Crafted with precision and expertise, this Power BJT transistor offers unparalleled quality and reliability. Ideal for amplifier applications, this PNP transistor with a built-in diode guarantees optimal performance. With a maximum power dissipation of 200W and a maximum collector-emitter voltage of 260V, this transistor is a game-changer in the industry. Experience seamless integration and enhanced efficiency with the NJL1302DG, setting new standards for excellence in electronic components.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor components, making it durable and reliable.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required, providing flexibility in circuit design.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode simplifies circuit design and saves space, making it convenient for amplifier applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance and efficiency in amplifying signals.

Maximum Power Dissipation (Abs): 200 W

High power dissipation capability allows the transistor to handle large power loads without overheating, making it suitable for high-power applications.

Maximum Collector-Emitter Voltage: 260 V

With a high collector-emitter voltage rating, the transistor can withstand high voltage levels, ensuring reliable operation in various circuits.

Nominal Transition Frequency (fT): 30 MHz

High transition frequency enables the transistor to switch rapidly between on and off states, suitable for high-frequency applications like amplifiers.

Technical Specifications

Power Bipolar Junction Transistors (BJT) NJL1302DG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

260 V

Minimum DC Current Gain (hFE):

45

JESD-30 Code:

R-PSFM-T5

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

5

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NJL1302DG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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