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NO Insulated Gate Bipolar Transistors (IGBT) 1,397

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
IHW30N100R by Infineon Technologies

IHW30N100R

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 412 W; Maximum Collector Current (IC): 60 A; Case Connection: COLLECTOR;

COLLECTOR

60 A

1000 V

SINGLE WITH BUILT-IN DIODE

6.4 V

20 V

TO-247AC

R-PSFM-T3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

412 W

Not Qualified

Insulated Gate BIP Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SILICON

988.4 ns

IHW30N120R2 by Infineon Technologies

IHW30N120R2

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 390 W; Maximum Collector Current (IC): 60 A; JEDEC-95 Code: TO-247AD;

COLLECTOR

60 A

1200 V

SINGLE WITH BUILT-IN DIODE

6.4 V

20 V

TO-247AD

R-PSFM-T3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

390 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SILICON

900 ns

IHW30N90R by Infineon Technologies

IHW30N90R

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 454 W; Maximum Collector Current (IC): 60 A; Maximum Gate-Emitter Voltage: 20 V;

COLLECTOR

60 A

900 V

SINGLE WITH BUILT-IN DIODE

6.4 V

20 V

TO-247AC

R-PSFM-T3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

454 W

Not Qualified

Insulated Gate BIP Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SILICON

640 ns

STGW35HF60WDI by STMicroelectronics

STGW35HF60WDI

STMicroelectronics

STGW35HF60WDI from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, a turn-off time of just 295 ns, and can handle up to 200 W dissipation. Ideal for high-performance switching in industrial systems.

60 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

200 W

Not Qualified

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

295 ns

45 ns

STGW45HF60WDI by STMicroelectronics

STGW45HF60WDI

STMicroelectronics

STGW45HF60WDI by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 70A max collector current, and 250W max power dissipation. Ideal for power control applications requiring a single transistor with built-in diode in a rectangular package style.

70 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 W

Not Qualified

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

STGWA35HF60WDI by STMicroelectronics

STGWA35HF60WDI

STMicroelectronics

STGWA35HF60WDI from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600V, 70A current capacity, and a fast turn-off time of 295ns. Ideal for high-performance switching in industrial systems.

70 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

260 W

Not Qualified

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

295 ns

45 ns

STGWA45HF60WDI by STMicroelectronics

STGWA45HF60WDI

STMicroelectronics

STGWA45HF60WDI from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max power dissipation of 310 W, operates up to 150 °C, and supports voltages up to 600 V. Ideal for applications requiring robust performance in demanding environments.

80 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

310 W

Not Qualified

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

STGP10NC60K by STMicroelectronics

STGP10NC60K

STMicroelectronics

STGP10NC60K from STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max collector-emitter voltage of 600 V, a power dissipation of 60 W, and operates at up to 150 °C. Its fast switching times (ton: 23 ns, toff: 242 ns) enhance efficiency in various electronic systems.

ULTRA FAST

20 A

600 V

SINGLE

6.5 V

20 V

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

60 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

242 ns

23 ns

STGP19NC60WD by STMicroelectronics

STGP19NC60WD

STMicroelectronics

STGP19NC60WD from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600V, 40A collector current, and a fast turn-off time of 204ns. Ideal for high-performance switching in industrial systems.

40 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

125 W

Not Qualified

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

204 ns

33 ns

STGW19NC60WD by STMicroelectronics

STGW19NC60WD

STMicroelectronics

STGW19NC60WD from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600V, 42A collector current, and a fast turn-off time of 204ns. Ideal for high-performance switching in industrial systems.

42 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

125 W

Not Qualified

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

204 ns

33 ns

STG3P2M10N60B by STMicroelectronics

STG3P2M10N60B

STMicroelectronics

STG3P2M10N60B from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2.5V, supports up to 600V, and has a nominal turn-off time of just 99ns. Ideal for high-performance applications in industrial drives and renewable energy systems.

19 A

600 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

20 V

R-XUFM-X16

6

16

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

56 W

Not Qualified

Insulated Gate BIP Transistors

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

99 ns

27 ns

2.5 V

STGW30NC60VD by STMicroelectronics

STGW30NC60VD

STMicroelectronics

STGW30NC60VD by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 80A max collector current, and 250W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 280ns.

80 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-247

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

250 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

280 ns

42.5 ns

STGW40NC60WD by STMicroelectronics

STGW40NC60WD

STMicroelectronics

STGW40NC60WD by STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, 70 A collector current, and a fast turn-off time of 280 ns. Ideal for high-performance switching in industrial systems.

70 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-247AC

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 W

Not Qualified

Insulated Gate BIP Transistors

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

280 ns

46 ns

STGF19NC60WD by STMicroelectronics

STGF19NC60WD

STMicroelectronics

STGF19NC60WD from STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 32W, and operates at up to 150 °C. Its fast switching times (ton: 25ns, toff: 127ns) enhance efficiency.

ISOLATED

14 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

32 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

127 ns

25 ns

STGE50NC60WD by STMicroelectronics

STGE50NC60WD

STMicroelectronics

STGE50NC60WD from STMicroelectronics is an N-channel IGBT ideal for power control applications. It features a max VCEsat of 2.6V, supports up to 100A collector current, and operates at a max temp of 150 °C. Its compact flange mount design ensures efficient thermal management.

ISOLATED

100 A

600 V

SINGLE WITH BUILT-IN DIODE

20 V

R-PUFM-X4

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

260 W

Not Qualified

Insulated Gate BIP Transistors

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

343 ns

69 ns

2.6 V

QID4515001 by Powerex

QID4515001

Powerex

Powerex QID4515001 is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max VCEsat of 3.9V and can handle a Max Collector Current of 150A. Ideal for POWER CONTROL applications due to its high power dissipation capability of 1440W and max operating temperature of 150°C.

ISOLATED

150 A

4500 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

1200 ns

7.5 V

20 V

R-PUFM-X8

2

8

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

1440 W

Not Qualified

IEC-60077-1; IEC-1287

500 ns

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

4700 ns

2000 ns

3.9 V

STGP19NC60W by STMicroelectronics

STGP19NC60W

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 40 A; JEDEC-95 Code: TO-220AB;

40 A

600 V

SINGLE

5.75 V

20 V

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

125 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

204 ns

33 ns

STGE50NC60VD by STMicroelectronics

STGE50NC60VD

STMicroelectronics

STGE50NC60VD by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.5V, IC of 90A, and Pmax of 260W. Ideal for power control applications due to its fast turn-off time (toff) of 247ns and turn-on time (ton) of 61ns. Operates at a max temperature of 150°C with a collector-emitter voltage rating of 600V.

ISOLATED

90 A

600 V

SINGLE WITH BUILT-IN DIODE

20 V

R-XUFM-X4

1

4

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

260 W

Not Qualified

Insulated Gate BIP Transistors

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

247 ns

61 ns

2.5 V

STGB6NC60HD-1 by STMicroelectronics

STGB6NC60HD-1

STMicroelectronics

STGB6NC60HD-1 from STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max collector-emitter voltage of 600V, a nominal turn-off time of 222ns, and can handle up to 15A of current. This robust device operates efficiently in high-temperature environments up to 150 °C.

15 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-262AA

R-PSIP-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

N-CHANNEL

56 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

222 ns

17.3 ns

STGB18N40LZ-1 by STMicroelectronics

STGB18N40LZ-1

STMicroelectronics

STGB18N40LZ-1 from STMicroelectronics is an N-channel IGBT designed for automotive ignition applications. It features a max collector-emitter voltage of 420 V, power dissipation of 150 W, and operates at up to 175 °C. Its built-in diode enhances efficiency in demanding environments.

VOLTAGE CLAMPING

COLLECTOR

30 A

420 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

2.3 V

16 V

TO-262AA

R-PSIP-T3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

150 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AUTOMOTIVE IGNITION

SILICON

22200 ns

4450 ns

STGD18N40LZ-1 by STMicroelectronics

STGD18N40LZ-1

STMicroelectronics

STGD18N40LZ-1 from STMicroelectronics is an N-channel IGBT ideal for automotive ignition applications. It features a max collector-emitter voltage of 420 V, power dissipation of 125 W, and operates at up to 175 °C. Its built-in diode enhances efficiency in demanding environments.

VOLTAGE CLAMPING

COLLECTOR

25 A

420 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

2.3 V

16 V

TO-251

R-PSIP-T3

e3

1

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

125 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AUTOMOTIVE IGNITION

SILICON

22200 ns

4450 ns

STGW35NB60S by STMicroelectronics

STGW35NB60S

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 70 A; Qualification: Not Qualified;

ISOLATED

70 A

600 V

SINGLE

5 V

20 V

TO-247

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

200 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

3600 ns

153 ns

STGFL6NC60D by STMicroelectronics

STGFL6NC60D

STMicroelectronics

STGFL6NC60D by STMicroelectronics is an N-channel IGBT ideal for power control applications. It features a max collector-emitter voltage of 600V, a turn-off time of 122ns, and can handle up to 7A current. Its robust design ensures reliable performance in demanding environments.

ISOLATED

7 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

22 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

122 ns

10.5 ns

STGPL6NC60D by STMicroelectronics

STGPL6NC60D

STMicroelectronics

STGPL6NC60D from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600V, 14A collector current, and a fast turn-off time of 122ns. Ideal for high-temperature environments with a max operating temp of 150 °C.

14 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

56 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

122 ns

10.5 ns

STGW30N90D by STMicroelectronics

STGW30N90D

STMicroelectronics

STGW30N90D from STMicroelectronics is an N-channel IGBT ideal for power control applications. It features a max collector-emitter voltage of 900 V, a power dissipation of 220 W, and operates at up to 150 °C. Its fast switching times (ton: 41 ns, toff: 928 ns) enhance efficiency in various electronic systems.

60 A

900 V

SINGLE WITH BUILT-IN DIODE

5.75 V

25 V

TO-247

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

220 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

928 ns

41 ns

APT30GS60BRDQ2(G) by Microsemi

APT30GS60BRDQ2(G)

Microsemi

Microsemi's APT30GS60BRDQ2(G) is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 54A max collector current. Ideal for motor control applications, it features a single configuration with built-in diode and a nominal turn-off time of 412ns. Package style is flange mount with through-hole terminals.

COLLECTOR

54 A

600 V

SINGLE WITH BUILT-IN DIODE

TO-247AD

R-PSFM-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

TIN SILVER COPPER

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

412 ns

45 ns

STGF10NC60HD by STMicroelectronics

STGF10NC60HD

STMicroelectronics

STGF10NC60HD from STMicroelectronics is a robust N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, 20A collector current, and fast switching times (ton: 19ns, toff: 247ns). Its compact flange mount design ensures efficient thermal management.

ISOLATED

20 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

23 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

247 ns

19 ns

STGF8NC60KD by STMicroelectronics

STGF8NC60KD

STMicroelectronics

STGF8NC60KD by STMicroelectronics is an N-channel IGBT ideal for power control applications. It features a max collector-emitter voltage of 600V, a turn-off time of 242ns, and can handle up to 7A current. Its robust design ensures reliable performance in demanding environments.

ISOLATED

7 A

600 V

SINGLE WITH BUILT-IN DIODE

6.5 V

20 V

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

24 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

242 ns

23 ns

STGP19NC60S by STMicroelectronics

STGP19NC60S

STMicroelectronics

STGP19NC60S by STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, a power dissipation of 125 W, and operates at up to 150 °C. Its fast switching times (ton: 23.5 ns, toff: 535 ns) enhance performance in various electronic systems.

FREE WHEELING DIODE

COLLECTOR

50 A

600 V

SINGLE

5.75 V

20 V

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

125 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

535 ns

23.5 ns

STGP8NC60KD by STMicroelectronics

STGP8NC60KD

STMicroelectronics

STGP8NC60KD by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 15A IC, and 65W Ptot. It is used for power control applications due to its fast turn-off time of 242ns and built-in diode configuration. The package style is flange mount with a max operating temperature of 150°C.

15 A

600 V

SINGLE WITH BUILT-IN DIODE

6.5 V

20 V

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

65 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

242 ns

23 ns

STGP8NC60K by STMicroelectronics

STGP8NC60K

STMicroelectronics

STGP8NC60K from STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max collector-emitter voltage of 600 V, a nominal turn-off time of 242 ns, and can handle up to 15 A of collector current. This robust device operates efficiently at temperatures up to 150 °C.

15 A

600 V

SINGLE

6.5 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

65 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

242 ns

23 ns

STGW35NC60WD by STMicroelectronics

STGW35NC60WD

STMicroelectronics

STGW35NC60WD by STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, a power dissipation of 250 W, and operates at up to 150 °C. Its fast switching times (ton: 42.5 ns, toff: 197 ns) enhance performance in various electronic systems.

70 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-247AC

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

250 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

197 ns

42.5 ns

STGW40NC60KD by STMicroelectronics

STGW40NC60KD

STMicroelectronics

STGW40NC60KD from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, 70 A collector current, and a fast turn-off time of 338 ns. Ideal for high-performance switching in industrial systems.

70 A

600 V

SINGLE WITH BUILT-IN DIODE

6.5 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 W

Not Qualified

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

338 ns

64 ns

STGW30N120KD by STMicroelectronics

STGW30N120KD

STMicroelectronics

STGW30N120KD IGBT from STMicroelectronics is ideal for motor control applications, featuring a max collector-emitter voltage of 1200 V and power dissipation of 220 W. It has a fast turn-on time of 57 ns and operates at up to 125 °C. This N-channel device ensures efficient performance in demanding environments.

60 A

1200 V

SINGLE WITH BUILT-IN DIODE

5.75 V

25 V

TO-247AC

R-PSFM-T3

1

3

125 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

220 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

MOTOR CONTROL

SILICON

756 ns

57 ns

STGW33IH120D by STMicroelectronics

STGW33IH120D

STMicroelectronics

STGW33IH120D IGBT from STMicroelectronics features a max collector-emitter voltage of 1200 V and power dissipation of 220 W, ideal for motor control applications. It has a fast turn-on time of 57 ns and operates at up to 150 °C. This N-channel device ensures efficient performance in demanding environments.

60 A

1200 V

SINGLE WITH BUILT-IN DIODE

5.75 V

25 V

TO-247AC

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

220 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

MOTOR CONTROL

SILICON

740 ns

57 ns

GT50N322A by Toshiba

GT50N322A

Toshiba

Toshiba's GT50N322A is an N-CHANNEL IGBT with 1000V max collector-emitter voltage, 50A max collector current, and 700ns turn-off time. Ideal for power control applications, it features a single configuration with built-in diode in a rectangular package style suitable for flange mount installations.

COLLECTOR

50 A

1000 V

SINGLE WITH BUILT-IN DIODE

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

700 ns

330 ns

STGP30NC60S by STMicroelectronics

STGP30NC60S

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 175 W; Maximum Collector Current (IC): 55 A; Package Shape: RECTANGULAR;

COLLECTOR

55 A

600 V

SINGLE

5.75 V

20 V

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

175 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

555 ns

30 ns

STGW45NC60VD by STMicroelectronics

STGW45NC60VD

STMicroelectronics

STGW45NC60VD from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, 90 A collector current, and a fast turn-off time of 366 ns. Ideal for high-performance switching in industrial systems.

90 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-247

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

270 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

366 ns

46 ns

STGW50NC60W by STMicroelectronics

STGW50NC60W

STMicroelectronics

STGW50NC60W from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, a power dissipation of 285 W, and operates at up to 150 °C. Ideal for high-performance switching in industrial systems.

100 A

600 V

SINGLE

5.75 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

285 W

Not Qualified

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

343 ns

69 ns

NGTB30N65IHL2WG by Onsemi

NGTB30N65IHL2WG

Onsemi

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Collector Current (IC): 60 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V; JESD-609 Code: e3;

60 A

650 V

6.5 V

20 V

e3

175 Cel

N-CHANNEL

300 W

Insulated Gate BIP Transistors

NO

Matte Tin (Sn) - annealed

NGTB35N65FL2WG by Onsemi

NGTB35N65FL2WG

Onsemi

The Onsemi NGTB35N65FL2WG is an N-CHANNEL IGBT with 650V VCE, 70A IC, and 300W power dissipation. Ideal for high-power applications requiring efficient switching at up to 175 °C operating temperature.

70 A

650 V

6.5 V

20 V

e3

175 Cel

N-CHANNEL

300 W

Insulated Gate BIP Transistors

NO

MATTE TIN

NGTB60N60SWG by Onsemi

NGTB60N60SWG

Onsemi

NGTB60N60SWG by Onsemi is an N-CHANNEL IGBT with 600V VCE, 120A IC, and 298W Pd. Ideal for high-power applications requiring efficient switching at up to 150 °C operating temperature.

120 A

600 V

6.5 V

20 V

e3

150 Cel

N-CHANNEL

298 W

Insulated Gate BIP Transistors

NO

TIN

STGFW40V60F by STMicroelectronics

STGFW40V60F

STMicroelectronics

STGFW40V60F by STMicroelectronics is an N-CHANNEL IGBT transistor with VCEsat of 2.3V and IC of 80A. Ideal for POWER CONTROL applications, it has a toff of 241ns, ton of 73ns, and can operate at temperatures ranging from -55°C to 175°C.

80 A

600 V

SINGLE

7 V

20 V

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

98.5 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

241 ns

73 ns

2.3 V

VS-GA200SA60UP by Vishay Intertechnology

VS-GA200SA60UP

Vishay Intertechnology

VS-GA200SA60UP by Vishay Intertechnology is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 200A max collector current. It has a single configuration for power control applications, featuring a rectangular package style with flange mount and isolated case connection. Nominal turn off time is 620ns and turn on time is 131ns, making it suitable for high-power switching needs.

LOW CONDUCTION LOSS

ISOLATED

200 A

600 V

SINGLE

R-PUFM-X4

1

4

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL APPROVED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

620 ns

131 ns

CM1000E3U-34NF by Powerex

CM1000E3U-34NF

Powerex

Powerex CM1000E3U-34NF is an N-CHANNEL IGBT with 1700V VCE, 1000A IC, and 150°C max temp. Ideal for power control applications due to its single configuration with built-in diode and flange mount package style.

ISOLATED

1000 A

1700 V

SINGLE WITH BUILT-IN DIODE

R-XUFM-X4

1

4

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

STGW35HF60WD by STMicroelectronics

STGW35HF60WD

STMicroelectronics

STGW35HF60WD from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, 200 W power dissipation, and fast switching times (ton: 45 ns, toff: 295 ns). Ideal for high-temperature environments with a max operating temp of 150 °C.

LOW CONDUCTION LOSS

60 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

200 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

295 ns

45 ns

STGW45HF60WD by STMicroelectronics

STGW45HF60WD

STMicroelectronics

STGW45HF60WD by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 70A max collector current, and 250W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 250ns.

LOW CONDUCTION LOSS

70 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-247

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

250 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

250 ns

44 ns

STGP19NC60H by STMicroelectronics

STGP19NC60H

STMicroelectronics

STGP19NC60H from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600V, 40A collector current, and operates at up to 150 °C. Ideal for high-performance switching in industrial systems.

40 A

600 V

SINGLE

5.75 V

20 V

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

130 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

272 ns

32 ns