Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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FF1000R17IE4BOSA1
Infineon Technologies
FF1000R17IE4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max Collector-Emitter Voltage of 1700V and a Nominal Turn Off Time of 1890ns, making it ideal for POWER CONTROL applications. The transistor features a Max Collector Current of 1390A and operates at temperatures up to 175°C in a FLANGE MOUNT package style.
ISOLATED
1390 A
1700 V
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
R-XUFM-X7
2
7
175 Cel
UNSPECIFIED
RECTANGULAR
FLANGE MOUNT
NOT SPECIFIED
N-CHANNEL
Not Qualified
NO
UPPER
POWER CONTROL
SILICON
1890 ns
720 ns
FF1400R12IP4BOSA1
FF1400R12IP4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max voltage of 1200V and turn-off time of 1200ns. Ideal for power control applications due to its SILICON material and operating temperature up to 175°C.
1200 V
1200 ns
340 ns
FF300R12KT4HOSA1
FF300R12KT4HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a max voltage of 1200V, and a max current of 450A. It has a nominal turn-off time of 720ns and turn-on time of 230ns. Ideal for high-power applications requiring fast switching such as industrial motor drives and renewable energy systems.
450 A
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
150 Cel
230 ns
FF600R12IE4BOSA1
FF600R12IE4BOSA1 by Infineon is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max VCEsat of 2.05V and can handle up to 600A of Collector Current. Ideal for POWER CONTROL applications, it operates at a max temperature of 175°C, making it suitable for high-power systems.
600 A
20 V
3350 W
Insulated Gate BIP Transistors
1020 ns
410 ns
2.05 V
FF650R17IE4BOSA1
Infineon Technologies' FF650R17IE4BOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. Ideal for POWER CONTROL applications, it has a max voltage of 1700V, max current of 930A, and operates up to 175°C. With turn on time of 720ns and turn off time of 1870ns, this rectangular package transistor is flange mountable with isolated case connection.
930 A
1870 ns
FF900R12IE4BOSA1
FF900R12IE4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max collector-emitter voltage of 1200V and can handle a max collector current of 900A. Ideal for power control applications due to its fast turn on time of 350ns and turn off time of 940ns at a max operating temperature of 175°C.
900 A
940 ns
350 ns
FF1400R17IP4BOSA1
Infineon Technologies' FF1400R17IP4BOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. Ideal for POWER CONTROL applications, it has a max voltage of 1700V and operates at up to 175°C. With turn off time of 2190ns and turn on time of 1030ns, this RECTANGULAR package transistor offers efficient performance.
R-XUFM-X12
12
2190 ns
1030 ns
FZ1200R33KF2CNOSA1
N-CHANNEL; Configuration: PARALLEL, 3 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 14500 W; Maximum Collector Current (IC): 2000 A; Case Connection: ISOLATED;
2000 A
3300 V
PARALLEL, 3 ELEMENTS WITH BUILT-IN DIODE
R-XUFM-X9
3
9
14500 W
1900 ns
480 ns
4.25 V
FZ500R65KE3NOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Terminal Form: UNSPECIFIED; Qualification: Not Qualified; Nominal Turn Off Time (toff): 8100 ns;
6500 V
COMPLEX
8100 ns
FZ600R65KE3NOSA1
FZ600R65KE3NOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 6500V max collector-emitter voltage. It has a complex configuration, 3 elements, and 1200ns nominal turn on time. Ideal for power control applications due to its isolated case connection and flange mount package style.
FZ750R65KE3NOSA1
FZ750R65KE3NOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 3 elements in parallel configuration. It has a max collector-emitter voltage of 6500V and nominal turn off time of 8100ns, making it ideal for power control applications. The transistor's package style is flange mount with 9 terminals, operating at a max temperature of 150°C.
FP25R12KE3BOSA1
FP25R12KE3BOSA1 by Infineon is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 40A max collector current, and 610ns nominal turn off time. It is used in applications requiring high power switching such as industrial motor drives and renewable energy systems due to its complex configuration and isolated case connection.
40 A
R-XUFM-X24
24
610 ns
135 ns
FS100R12KE3BOSA1
FS100R12KE3BOSA1 by Infineon is a N-CHANNEL IGBT with 6 elements in bridge configuration. It has a max voltage of 1200V, current of 140A, and turn off time of 610ns. Ideal for applications requiring high power switching like motor drives and renewable energy systems.
140 A
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
R-XUFM-X35
6
35
STGW20V60DF
STMicroelectronics
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 167 W; Maximum Collector Current (IC): 40 A; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Gate-Emitter Voltage: 20 V;
600 V
167 W
STGW60H65DFB
STGW60H65DFB by STMicroelectronics is an N-CHANNEL IGBT with 650V max collector-emitter voltage, 80A max collector current, and 375W max power dissipation. It operates up to 175°C making it suitable for high-power applications like motor drives and inverters.
80 A
650 V
375 W
STGW80H65DFB
STGW80H65DFB by STMicroelectronics is an N-CHANNEL IGBT with 650V VCE, 120A IC, and 469W Pd. It operates up to 175°C making it ideal for high-power applications like motor drives and inverters.
120 A
469 W
STGW80V60DF
STGW80V60DF by STMicroelectronics is an N-CHANNEL IGBT with 469W power dissipation, 600V collector-emitter voltage, and 120A collector current. Ideal for high-power applications requiring efficient switching at up to 175°C operating temperature.
STGWT20V60DF
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 167 W; Maximum Collector Current (IC): 40 A; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Operating Temperature: 175 Cel;
STGWT40H60DLFB
STGWT40H60DLFB by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 80A max collector current, and 283W max power dissipation. Ideal for high-power applications requiring efficient switching at up to 175 °C operating temperature.
283 W
STGWT40H65DFB
STGWT40H65DFB by STMicroelectronics is an N-CHANNEL IGBT with 283W power dissipation, 650V collector-emitter voltage, and 80A collector current. Ideal for high-power applications requiring efficient switching at up to 175°C operating temperature.
STGWT60H65DFB
STGWT60H65DFB by STMicroelectronics is an N-CHANNEL IGBT with 650V VCE, 80A IC, and 375W power dissipation. Ideal for high-power applications requiring efficient switching at up to 175°C operating temperature.
STGWT60V60DF
STGWT60V60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.3V, IC of 80A, and Pmax of 375W. Ideal for power control applications due to its fast turn-off time (toff) of 243ns and high operating temperature range (-55 to 175 °C).
COLLECTOR
SINGLE WITH BUILT-IN DIODE
7 V
R-PSFM-T3
1
-55 Cel
PLASTIC/EPOXY
THROUGH-HOLE
SINGLE
243 ns
80 ns
2.3 V
STGWT80H65DFB
STGWT80H65DFB by STMicroelectronics is an N-CHANNEL IGBT with 469W power dissipation, 650V collector-emitter voltage, and 120A collector current. It operates up to 175 °C making it ideal for high-power applications in industries like automotive and renewable energy.
STGWT80V60DF
STGWT80V60DF by STMicroelectronics is an N-CHANNEL IGBT with 469W power dissipation, 175 °C max temp, 600V collector-emitter voltage. Ideal for high-power applications like motor drives and inverters due to its 120A collector current capacity.
MG12100W-XN2MM
Littelfuse
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 140 A; No. of Elements: 6; Nominal Turn Off Time (toff): 610 ns;
6.5 V
125 Cel
-40 Cel
TIG056BF-1E
Onsemi
Onsemi's TIG056BF-1E is an N-CHANNEL IGBT with 30W power dissipation, 150 °C max temp, and 430V collector-emitter voltage. Ideal for high-power applications in industrial machinery and renewable energy systems due to its robust design and efficient performance.
430 V
5 V
33 V
e3
30 W
MATTE TIN
FGH15T120SMD_F155
Fairchild Semiconductor
Fairchild Semiconductor's FGH15T120SMD_F155 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 30A max collector current, and 333W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 534ns.
30 A
7.5 V
25 V
TO-247AB
333 W
534 ns
74 ns
FGH40T120SMD_F155
FGH40T120SMD_F155 by Fairchild Semiconductor is an N-CHANNEL IGBT with 555W power dissipation, 1200V collector-emitter voltage, and 80A collector current. Ideal for high-power applications requiring efficient switching capabilities in industrial machinery and renewable energy systems.
555 W
NGTB30N120IHRWG
NGTB30N120IHRWG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 60A IC, and 384W power dissipation. Ideal for high-power applications requiring efficient switching at up to 175 °C operating temperature.
60 A
384 W
Tin (Sn)
NGTB40N120IHRWG
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 384 W; Maximum Collector Current (IC): 80 A; Maximum Collector-Emitter Voltage: 1200 V; Maximum Gate-Emitter Voltage: 20 V;
NGTB40N60FLWG
NGTB40N60FLWG by Onsemi is an N-CHANNEL IGBT with 257W power dissipation, 600V collector-emitter voltage, and 80A collector current. It operates up to 150 °C and has a gate-emitter threshold voltage of 6.5V. Ideal for high-power applications requiring efficient switching capabilities.
257 W
STGFW20V60F
STGFW20V60F by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 40A max collector current. It has a single configuration with built-in diode, suitable for power control applications. The transistor offers fast switching times of 49ns turn-on and 173ns turn-off, making it ideal for high-speed operations.
173 ns
49 ns
STGW20V60F
STGW20V60F by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 40A max collector current. It has a turn on time of 49ns and turn off time of 173ns, making it ideal for power control applications requiring fast switching speeds. The transistor comes in a rectangular package with through-hole terminals, suitable for flange mount installation.
TO-247
STGWT20V60F
STGWT20V60F by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 40A IC, and 49ns ton. It is used for power control applications due to its single configuration with built-in diode and flange mount package style.
STGP40V60F
STGP40V60F by STMicroelectronics is an N-CHANNEL IGBT with 600V VCEsat, 80A IC, and 283W power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time of 241ns and high operating temperature range (-55 °C to 175°C).
TO-220AB
241 ns
73 ns
STGW20H60DF
STGW20H60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2V and IC of 40A. Ideal for POWER CONTROL applications, it has a max VCE of 600V and turn-off time of 259ns. This SINGLE transistor in PLASTIC/EPOXY package operates b/w -55 to 175 °C.
259 ns
55.9 ns
2 V
STGWT20H60DF
STGWT20H60DF by STMicroelectronics is an N-CHANNEL IGBT with 600V VCEsat, 40A IC, and 167W power dissipation. Ideal for power control applications due to its fast turn-on/off times and high collector-emitter voltage. Package style: FLANGE MOUNT, terminal form: THROUGH-HOLE, and operating temperature range: -55 to 175 °C.
STGFW30V60F
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 58 W; Maximum Collector Current (IC): 60 A; Transistor Application: POWER CONTROL;
58 W
225 ns
59 ns
STGP20V60F
STGP20V60F by STMicroelectronics is an N-CHANNEL IGBT with 600V VCEsat, 20A IC, and 2.2V VCE. Ideal for POWER CONTROL applications, it has a toff of 173ns and ton of 49ns. The package style is FLANGE MOUNT with a max power dissipation of 167W at 175 °C operating temperature.
20 A
2.2 V
STGP30V60F
STGP30V60F by STMicroelectronics is an N-CHANNEL IGBT with 600V VCEsat, 260W power dissipation, and 60A collector current. Ideal for POWER CONTROL applications, it has a turn-off time of 225ns and operates b/w -55 to 175°C.
260 W
STGW30V60F
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 260 W; Maximum Collector Current (IC): 60 A; Transistor Element Material: SILICON;
STGW60H65FB
STGW60H65FB by STMicroelectronics is an N-CHANNEL IGBT transistor with 650V VCEsat and 80A IC. It is used for POWER CONTROL applications, featuring a 375W power dissipation and -55 to 175°C operating temperature range.
104 ns
STGWT30V60F
STGWT30V60F by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.3V, IC of 60A, and Ptot of 260W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 225ns and high operating temperature range (-55 to 175 °C).
STGWT40H65FB
STGWT40H65FB by STMicroelectronics is an N-CHANNEL IGBT with 650V VCEsat, 80A IC, and 283W power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time of 202ns and high operating temperature range (-55 °C to 175°C).
202 ns
52 ns
STGWT60H65FB
STGWT60H65FB by STMicroelectronics is an N-CHANNEL IGBT transistor with 650V VCEsat and 80A IC. It is designed for POWER CONTROL applications, featuring a max power dissipation of 375W and operating temperature range from -55 °C to 175°C.
NGTB40N120FL2WG
NGTB40N120FL2WG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 80A IC, and 535W Pd. It operates up to 175°C making it ideal for high-power applications like industrial motor drives and renewable energy systems.
535 W
NGTB50N120FL2WG
NGTB50N120FL2WG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 100A IC, and 535W Pd. Ideal for high-power applications like motor drives, inverters, and power supplies due to its robust design and high operating temperature of 175°C.
100 A
FD1200R17KE3KB2NOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 1700 A; Case Connection: ISOLATED; Terminal Position: UPPER;
1700 A
2100 ns
1050 ns
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