Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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IXGH30N60BD1
IXYS Corporation
IXGH30N60BD1 by IXYS Corp is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 60A max collector current, and 200W max power dissipation. Ideal for power control applications due to its fast turn-off time of 200ns and built-in diode in a rectangular package.
FAST
COLLECTOR
60 A
600 V
SINGLE WITH BUILT-IN DIODE
190 ns
5 V
20 V
TO-247AD
R-PSFM-T3
1
3
150 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
NOT SPECIFIED
N-CHANNEL
200 W
Not Qualified
Insulated Gate BIP Transistors
NO
THROUGH-HOLE
SINGLE
POWER CONTROL
SILICON
200 ns
25 ns
IXGH31N60
IXGH31N60 by IXYS Corp is an N-CHANNEL IGBT transistor with VCEsat of 1.8V and IC of 60A. Ideal for POWER CONTROL applications, it has a toff of 1600ns, tf of 1100ns, and can handle up to 150W power dissipation.
1100 ns
150 W
1600 ns
40 ns
1.8 V
IXGR32N60CD1
IXGR32N60CD1 by IXYS Corp is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 45A max collector current, and 140W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 210ns.
ISOLATED
45 A
R-PSIP-T3
e1
IN-LINE
140 W
TIN SILVER COPPER
210 ns
50 ns
STGFW40V60DF
STMicroelectronics
STGFW40V60DF from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2.3V, supports up to 600V collector-emitter voltage, and operates at temperatures from -55 °C to 175°C. Ideal for high-performance switching in industrial systems.
80 A
7 V
175 Cel
-55 Cel
98.5 W
241 ns
73 ns
2.3 V
NGTB30N60L2WG
Onsemi
NGTB30N60L2WG by Onsemi is an N-CHANNEL IGBT with 225W power dissipation, 600V collector-emitter voltage, and 100A collector current. Ideal for high-power applications requiring efficient switching capabilities in industrial machinery, renewable energy systems, and motor control equipment.
100 A
6.5 V
e3
225 W
MATTE TIN
NGTB45N60SWG
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 90 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Maximum Gate-Emitter Voltage: 20 V;
90 A
250 W
STGW28IH125DF
STGW28IH125DF from STMicroelectronics is a robust N-channel IGBT ideal for high-power applications. It features a max VCEsat of 2.5V, 375W power dissipation, and operates up to 175 °C. Perfect for industrial drives and renewable energy systems.
1250 V
TO-247
375 W
322 ns
2.5 V
STGWT28IH125DF
STGWT28IH125DF from STMicroelectronics is a robust N-channel IGBT designed for high-efficiency applications. It features a max VCEsat of 2.5V, supports up to 375W power dissipation, and operates in extreme temps (-55 °C to 175 °C). Ideal for industrial motor control and power conversion.
MG06100S-BN4MM
Littelfuse
The Littelfuse MG06100S-BN4MM is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max VCEsat of 1.9V and can handle a Max Collector Current of 125A. Ideal for POWER CONTROL applications, it operates b/w -40 to 150 °C and features a Nominal Turn Off Time of 360ns.
125 A
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
R-XUFM-X7
2
7
-40 Cel
UNSPECIFIED
UL RECOGNIZED
UPPER
360 ns
100 ns
1.9 V
MG06100S-BR1MM
The Littelfuse MG06100S-BR1MM is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max voltage of 600V, max current of 150A, and turn off time of 390ns. Ideal for POWER CONTROL applications, it operates b/w -40 to 150°C with UL RECOGNIZED standard compliance.
150 A
5.5 V
390 ns
95 ns
MG06150S-BN4MM
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 225 A; No. of Terminals: 7; Maximum Gate-Emitter Voltage: 20 V;
225 A
440 ns
MG06200S-BN4MM
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 300 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Terminal Form: UNSPECIFIED;
300 A
MG06300D-BN4MM
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 400 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Gate-Emitter Threshold Voltage: 6.5 V;
400 A
590 ns
180 ns
MG06600WB-BN4MM
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 700 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Package Style (Meter): FLANGE MOUNT;
700 A
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
R-XUFM-X11
11
MOTOR CONTROL
785 ns
205 ns
MG12100D-BA1MM
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 160 A; Transistor Application: POWER CONTROL; Nominal Turn On Time (ton): 350 ns;
160 A
1200 V
615 ns
350 ns
MG12100S-BN2MM
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 140 A; Maximum Operating Temperature: 125 Cel; Transistor Element Material: SILICON;
140 A
125 Cel
610 ns
340 ns
MG12105S-BA1MM
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 150 A; Terminal Position: UPPER; Transistor Element Material: SILICON;
565 ns
195 ns
MG12150D-BA1MM
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 210 A; Transistor Application: POWER CONTROL; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
210 A
570 ns
225 ns
MG12150S-BN2MM
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 200 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Nominal Turn On Time (ton): 340 ns;
200 A
MG12200D-BA1MM
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 300 A; Package Shape: RECTANGULAR; Transistor Application: POWER CONTROL;
MG12200D-BN2MM
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 290 A; Case Connection: ISOLATED; Package Body Material: UNSPECIFIED;
290 A
680 ns
215 ns
MG12225WB-BN2MM
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 325 A; No. of Terminals: 11; Package Shape: RECTANGULAR;
325 A
220 ns
MG12300D-BA1MM
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 450 A; No. of Elements: 2; Maximum Collector-Emitter Voltage: 1200 V;
450 A
605 ns
280 ns
MG12300WB-BN2MM
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 500 A; Transistor Application: MOTOR CONTROL; Maximum Gate-Emitter Voltage: 20 V;
500 A
MG12400D-BN2MM
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 580 A; No. of Elements: 2; Reference Standard: UL RECOGNIZED;
580 A
MG12450WB-BN2MM
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 600 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Terminal Position: UPPER;
600 A
MG1250S-BA1MM
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 80 A; Minimum Operating Temperature: -40 Cel; Nominal Turn On Time (ton): 350 ns;
MG1275S-BA1MM
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 105 A; Reference Standard: UL RECOGNIZED; Package Body Material: UNSPECIFIED;
105 A
STGWT20IH125DF
STGWT20IH125DF from STMicroelectronics is a high-performance N-channel IGBT ideal for power applications. It features a max VCEsat of 2.5V, 1250V collector-emitter voltage, and handles up to 40A current. Its robust design suits industrial motor drives and renewable energy systems.
40 A
259 W
285 ns
CM1400E3U-24NF
Powerex
Powerex CM1400E3U-24NF is an N-CHANNEL IGBT with 1200V VCE, 1400A IC, and 150°C max temp. Ideal for power control applications due to its single configuration with built-in diode in a flange mount package.
1400 A
R-XUFM-X4
4
NGTB50N65FL2WG
NGTB50N65FL2WG by Onsemi is an N-CHANNEL IGBT with 650V VCE, 100A IC, and 417W Pd. Ideal for high-power applications requiring efficient switching at up to 175°C operating temperature.
650 V
417 W
STGP30H65F
STMicroelectronics' STGP30H65F is an N-CHANNEL IGBT with 650V VCE, 60A IC, and 2.4V VCEsat. Ideal for POWER CONTROL applications, it has a toff of 234ns and ton of 64ns. The transistor operates b/w -55 °C to 175°C in a PLASTIC/EPOXY package with FLANGE MOUNT style.
TO-220AB
260 W
234 ns
64 ns
2.4 V
STGD7NB120S-1
STGD7NB120S-1 by STMicroelectronics is an N-CHANNEL IGBT with 1200V VCE, 10A IC, and 55W Pd. Ideal for MOTOR CONTROL applications due to its SILICON material, 150 °C max temp, and 840ns turn on time. Package: PLASTIC/EPOXY IN-LINE with THROUGH-HOLE terminals.
10 A
TO-251
e0
55 W
TIN LEAD
840 ns
STGP10NB37LZ
STGP10NB37LZ by STMicroelectronics is an N-CHANNEL IGBT with 375V max collector-emitter voltage, 20A max collector current, and 125W max power dissipation. Primarily used in automotive ignition systems due to its single configuration with built-in diode and nominal turn-off time of 17800ns.
VOLTAGE CLAMPING
20 A
375 V
125 W
AUTOMOTIVE IGNITION
17800 ns
860 ns
NGTB15N120FL2WG
NGTB15N120FL2WG by Onsemi is an N-CHANNEL IGBT with 294W power dissipation, 1200V collector-emitter voltage, and 30A collector current. Ideal for high-power applications requiring efficient switching capabilities in industrial machinery, renewable energy systems, and motor control units.
30 A
294 W
STGFW20V60DF
STGFW20V60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.2V, IC of 40A, and Pmax of 86.7W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 173ns and high operating temperature range (-55 to 175 °C).
86.7 W
173 ns
49 ns
2.2 V
STGFW30V60DF
STGFW30V60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.3V, IC of 60A, and Pmax of 58W. Ideal for power control applications due to its fast turn-off time (toff) of 225ns and high collector-emitter voltage of 600V. Suitable for use in isolated case connections at temperatures ranging from -55 °C to 175°C.
58 W
59 ns
STGFW80V60F
STGFW80V60F by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.3V, IC of 120A, and Ptot of 79W. Ideal for POWER CONTROL applications due to its fast turn-off time (262ns) and high operating temperature range (-55 to 175 °C).
120 A
79 W
262 ns
90 ns
STGW80V60F
STGW80V60F by STMicroelectronics is an N-CHANNEL IGBT transistor with VCEsat of 2.3V, IC of 120A, and Pmax of 469W. Ideal for power control applications due to its fast turn-off time (262ns) and high collector-emitter voltage (600V). Package style: FLANGE MOUNT.
469 W
STGWT80V60F
STGWT80V60F by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.3V, IC of 120A, and Pmax of 469W. Ideal for POWER CONTROL applications due to its fast ton of 90ns and toff of 262ns at a max VCE of 600V.
HGT1N40N60A4D
Fairchild Semiconductor
Fairchild Semiconductor's HGT1N40N60A4D is an N-CHANNEL IGBT with 110A IC, 600V VCE, and 298W Pd. Ideal for POWER CONTROL applications, it features a toff of 240ns, tf of 95ns, and ton of 47ns. The package style is FLANGE MOUNT with PLASTIC/EPOXY body material.
LOW CONDUCTION LOSS
110 A
R-PUFM-X4
298 W
240 ns
47 ns
STGW40NC60W
STGW40NC60W by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 70A max collector current, and 250W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 280ns.
70 A
5.75 V
TO-247AC
46 ns
STGW45NC60WD
STGW45NC60WD by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 90A max collector current, and 285W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 280ns.
285 W
Matte Tin (Sn)
IFS100B12N3E4_B39
Infineon Technologies
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 515 W; Maximum Collector Current (IC): 100 A; Transistor Element Material: SILICON;
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR
R-XUFM-X34
6
34
515 W
2.1 V
STGF10NC60SD
STGF10NC60SD from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max collector-emitter voltage of 600V, a turn-off time of 560ns, and can handle up to 10A current. Ideal for applications in industrial motor drives and power converters.
ULTRA FAST
25 W
560 ns
22.5 ns
STGP10NC60S
STGP10NC60S from STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, a power dissipation of 62.5W, and operates at up to 150 °C. Its fast switching times enhance efficiency in various circuits.
21 A
62.5 W
IHW15N120R2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 357 W; Maximum Collector Current (IC): 30 A; Maximum Gate-Emitter Voltage: 20 V;
6.4 V
357 W
432 ns
IHW20N120R2
IHW20N120R2 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 40A. With a nominal turn-off time of 526ns, it is ideal for applications requiring high power dissipation up to 330W in industrial settings. The package style is flange mount with through-hole terminals, making it suitable for various power electronics applications.
330 W
526 ns
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