Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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STGWA25S120DF3
STMicroelectronics
STGWA25S120DF3 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2.1V, supports up to 375W power dissipation, and operates at temperatures from -55 °C to 175 °C. Ideal for high-voltage applications with a max collector-emitter voltage of 1200V.
COLLECTOR
50 A
1200 V
SINGLE WITH BUILT-IN DIODE
7 V
20 V
TO-247
R-PSFM-T3
1
3
175 Cel
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
NOT SPECIFIED
N-CHANNEL
375 W
NO
THROUGH-HOLE
SINGLE
POWER CONTROL
SILICON
593 ns
43 ns
2.1 V
STGWA40S120DF3
STGWA40S120DF3 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 1200 V, a collector current of 80 A, and fast switching times (ton: 50 ns, toff: 158.46 ns). Its robust plastic/epoxy package ensures reliability in demanding environments.
80 A
158.46 ns
50 ns
NGTB20N120IHWG
Onsemi
NGTB20N120IHWG by Onsemi is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 40A max collector current. It has a built-in diode, 395ns turn off time, and is ideal for power control applications. Package style is flange mount with through-hole terminals.
40 A
e3
TIN
395 ns
STGFW20H65FB
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 52 W; Maximum Collector Current (IC): 40 A; Maximum Gate-Emitter Threshold Voltage: 7 V; Maximum Operating Temperature: 175 Cel;
650 V
52 W
Insulated Gate BIP Transistors
STGW20H65FB
STGW20H65FB by STMicroelectronics is an N-CHANNEL IGBT with 650V VCE, 40A IC, and 168W power dissipation. Ideal for high-power applications requiring efficient switching at up to 175°C operating temperature.
168 W
STGW30H60DLFB
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 260 W; Maximum Collector Current (IC): 60 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
60 A
600 V
260 W
STGW80H65FB
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 469 W; Maximum Collector Current (IC): 120 A; Maximum Collector-Emitter Voltage: 650 V; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
120 A
469 W
STGWA15H120DF2
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 259 W; Maximum Collector Current (IC): 30 A; Maximum Collector-Emitter Voltage: 1200 V; Maximum Operating Temperature: 175 Cel;
30 A
259 W
STGWA25H120F2
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 375 W; Maximum Collector Current (IC): 50 A; Peak Reflow Temperature (C): NOT SPECIFIED;
339 ns
41 ns
STGWA30M65DF2
STGWA30M65DF2 by STMicroelectronics is an N-CHANNEL IGBT with 650V VCEsat, 60A IC, and 258W power dissipation. Ideal for power control applications due to its fast turn-off time of 310ns and high operating temperature of 175°C. Package style is flange mount with through-hole terminals.
258 W
310 ns
47 ns
2 V
STGWA40M120DF3
STGWA40M120DF3 by STMicroelectronics is an N-CHANNEL IGBT with a max power dissipation of 468W. It operates at a max temperature of 175°C and has a collector-emitter voltage of 1200V. It is commonly used in high-power applications such as motor drives and inverters.
468 W
STGWA80H65DFB
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 470 W; Maximum Collector Current (IC): 120 A; Nominal Turn Off Time (toff): 358 ns;
470 W
358 ns
128 ns
STGWA80H65FB
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 469 W; Maximum Collector Current (IC): 120 A; Maximum Collector-Emitter Voltage: 650 V; Maximum Gate-Emitter Threshold Voltage: 7 V;
STGWT80H65FB
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 469 W; Maximum Collector Current (IC): 120 A; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Operating Temperature: 175 Cel;
FGH60N60SFDTU_F085
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 378 W; Maximum Collector Current (IC): 120 A; Package Style (Meter): FLANGE MOUNT;
RC-IGBT
62 ns
6.6 V
150 Cel
378 W
AEC-Q101
MATTE TIN
166 ns
76 ns
2.9 V
NGTB30N135IHR1WG
NGTB30N135IHR1WG by Onsemi is an N-CHANNEL IGBT with 1350V VCEsat, 60A IC, and 394W power dissipation. Ideal for power control applications, it features a built-in diode and operates b/w -40 to 175 °C.
1350 V
6.5 V
-40 Cel
394 W
Matte Tin (Sn) - annealed
443 ns
3 V
STGWA25H120DF2
STGWA25H120DF2 by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.6V, IC of 50A, and Pmax of 375W. Ideal for power control applications due to its fast turn-off time (toff) of 339ns and high collector-emitter voltage of 1200V. Package style: FLANGE MOUNT, suitable for high-power operations in various industries.
2.6 V
DDB6U180N16RR
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE; Surface Mount: NO; Maximum Power Dissipation (Abs): 515 W; Maximum Collector Current (IC): 140 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V;
ISOLATED
140 A
SINGLE WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE
R-XUFM-X26
26
UNSPECIFIED
515 W
UL APPROVED
UPPER
620 ns
210 ns
2.2 V
STGW30M65DF2
STGW30M65DF2 by STMicroelectronics is an N-CHANNEL IGBT with 650V VCE, 60A IC, and 258W power dissipation. Ideal for POWER CONTROL applications, it features a built-in diode, 310ns turn-off time, and -55 to 175°C operating temperature range.
NGTB60N65FL2WG
NGTB60N65FL2WG by Onsemi is an N-CHANNEL IGBT with 650V VCEsat, 100A IC, and 595W power dissipation. Ideal for power control applications, it features a built-in diode and operates b/w -55 to 175 °C. The transistor has a turn-off time of 278ns and turn-on time of 168ns in a rectangular package with through-hole terminals.
100 A
595 W
278 ns
168 ns
NGTB25N120FL3WG
NGTB25N120FL3WG by Onsemi is an N-CHANNEL IGBT with 1200V VCEsat, 50A IC, and 349W power dissipation. Ideal for power control applications, it features a built-in diode and operates b/w -55 to 175 °C. This FLANGE MOUNT device has a turn-off time of 282ns and turn-on time of 36ns.
349 W
282 ns
36 ns
1.95 V
STGWA20M65DF2
STGWA20M65DF2 from STMicroelectronics is an N-channel IGBT ideal for power control applications. It features a max VCEsat of 2V, 650V collector-emitter voltage, and operates b/w -55 °C to 175 °C. Its compact design supports efficient thermal management in various electronic systems.
166 W
252 ns
39.6 ns
STGWA40H65DFB
STGWA40H65DFB from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2V, supports up to 80A collector current, and operates in temperatures from -55 °C to 175 °C. Ideal for high-performance applications, it ensures reliable operation with built-in diode functionality.
283 W
202 ns
52 ns
NGTB75N65FL2WAG
NGTB75N65FL2WAG by Onsemi is an N-CHANNEL IGBT with 650V VCEsat and 200A IC, ideal for POWER CONTROL applications. Featuring a 78ns turn on time and 262ns turn off time, this transistor has a max power dissipation of 536W. Its package style is FLANGE MOUNT with PLASTIC/EPOXY body material.
200 A
R-PSFM-T4
4
536 W
262 ns
78 ns
STGF10M65DF2
STGF10M65DF2 from STMicroelectronics is an N-channel IGBT ideal for power control applications. It features a max VCEsat of 2V, 650V collector-emitter voltage, and operates b/w -55 °C to 175 °C. Its compact design ensures efficient thermal management in various electronic systems.
20 A
TO-220AB
30 W
260 ns
27 ns
STGW80H65DFB-4
STGW80H65DFB-4 by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2V and IC of 120A. Ideal for POWER CONTROL applications, it has a max VCE of 650V and can handle up to 470W power dissipation. With fast ton of 104ns and toff of 448ns, this IGBT operates in temperatures ranging from -55°C to 175°C.
448 ns
104 ns
NGTB40N120FL2WAG
NGTB40N120FL2WAG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 160A IC, and 536W power dissipation. Ideal for power control applications, it features a built-in diode, 360ns turn-off time, and -55 to 175 °C operating temperature range.
160 A
360 ns
65 ns
2.4 V
NGTB50N65S1WG
The Onsemi NGTB50N65S1WG is an N-CHANNEL IGBT with a max VCEsat of 2.45V and IC of 140A. Ideal for POWER CONTROL applications, it has a turn-off time of 228ns and can operate at temperatures ranging from -55 to 175 °C.
TO-247AD
300 W
Tin (Sn)
228 ns
118 ns
2.45 V
RGTH40TK65DGC11
ROHM
ROHM RGTH40TK65DGC11 is an N-CHANNEL IGBT with 650V VCE, 23A IC, and 141ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE and FLANGE MOUNT package style.
23 A
141 ns
RGTH60TK65GC11
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 28 A; Package Style (Meter): FLANGE MOUNT; Nominal Turn On Time (ton): 67 ns;
28 A
179 ns
67 ns
STGWA60V60DF
STGWA60V60DF from STMicroelectronics is an N-channel IGBT ideal for power control applications. It features a max VCEsat of 2.3 V, supports up to 600 V collector-emitter voltage, and has a power dissipation of 375 W. Its robust design ensures reliable performance in demanding environments.
243 ns
80 ns
2.3 V
STGW75M65DF2
STGW75M65DF2 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2.1V, supports up to 120A collector current, and operates in temperatures from -55 °C to 175 °C. Ideal for high-performance applications, it ensures reliable operation with built-in diode functionality.
292 ns
73 ns
STGWA50M65DF2
STGWA50M65DF2 by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 80A, and Pmax of 375W. Ideal for power control applications due to its fast turn-off time (315ns) and high collector-emitter voltage rating (650V). Suitable for use in various industrial settings requiring efficient power management.
315 ns
66 ns
STGWA75M65DF2
STGWA75M65DF2 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2.1V, supports up to 120A collector current, and operates in temperatures from -55 °C to 175 °C. Ideal for high-performance applications requiring robust thermal management.
MG12150S-DEN2MM
Littelfuse
N-CHANNEL; Configuration: COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 200 A; Nominal Turn Off Time (toff): 610 ns; Maximum Gate-Emitter Voltage: 20 V;
COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE
R-XUFM-X7
2
7
125 Cel
UL RECOGNIZED
610 ns
340 ns
NGTB40N120S3WG
NGTB40N120S3WG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 160A IC, and 1.95V VCEsat. Ideal for POWER CONTROL applications due to its high power dissipation of 454W and operating temperature range of -55 to 175°C. Package style is FLANGE MOUNT with PLASTIC/EPOXY body material.
454 W
STGWA30H60DFB
STGWA30H60DFB from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2V, supports up to 600V collector-emitter voltage, and operates at temperatures from -55 °C to 175 °C. Ideal for high-performance applications, it ensures reliable operation with a built-in diode.
223 ns
51.1 ns
STGWA8M120DF3
STGWA8M120DF3 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2.3V, supports up to 1200V collector-emitter voltage, and operates at temperatures from -55 °C to 175 °C. Ideal for high-performance applications, it ensures reliable operation with low turn-off times.
16 A
167 W
356 ns
28.8 ns
IRGIB4630DPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 206 W; Terminal Position: SINGLE; Maximum Operating Temperature: 175 Cel;
206 W
160 ns
FGH75T65SQDTL4
FGH75T65SQDTL4 by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2.1V and IC of 150A, ideal for POWER CONTROL applications. Featuring a package style of FLANGE MOUNT, it has a max operating temperature of 175 °C and turn-off time of 352ns, making it suitable for high-power systems.
150 A
6.4 V
352 ns
FPF1C2P5MF07AM
FPF1C2P5MF07AM by Onsemi is an N-CHANNEL IGBT for POWER CONTROL applications. With a Max VCEsat of 1.6V, it has a Max Collector-Emitter Voltage of 620V and can handle up to 39A of Max Collector Current (IC). Ideal for high-power systems requiring efficient power management.
39 A
620 V
COMPLEX
R-XUFM-X24
24
231 W
1.6 V
FPF2C110BI07AS2
Onsemi's FPF2C110BI07AS2 is an N-CHANNEL IGBT for POWER CONTROL applications. It features a Max VCEsat of 2.3V, Nominal Turn Off Time of 152ns, and Max Collector-Emitter Voltage of 650V. This COMPLEX transistor with 6 elements operates b/w -40 to 150 °C and has a Max Power Dissipation of 158W in a RECTANGULAR package style.
6.1 V
R-XUFM-X30
6
30
158 W
152 ns
49 ns
STGF3HF60HD
STGF3HF60HD by STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2.95V, supports up to 600V collector-emitter voltage, and operates in temperatures from -55 °C to 150 °C. Ideal for high-performance switching tasks, it ensures reliable operation with minimal losses.
7.5 A
5.75 V
18 W
140 ns
15 ns
2.95 V
STGWA40H65FB
STGWA40H65FB from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2V, supports up to 80A collector current, and operates in temperatures from -55 °C to 175 °C. Ideal for high-performance switching tasks.
STGWT20HP65FB
STGWT20HP65FB from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2V, supports up to 650V collector-emitter voltage, and operates at temperatures from -55 °C to 175 °C. With a built-in diode and fast switching times (ton: 159ns, toff: 185ns), it's ideal for high-performance systems.
185 ns
159 ns
STGW40H65DFB-4
STGW40H65DFB-4 IGBT from STMicroelectronics features a max VCEsat of 2V, supports up to 80A collector current, and operates at temperatures from -55 °C to 175 °C. Ideal for power control applications, it ensures efficient performance in demanding environments. Its robust design includes a built-in diode for enhanced reliability.
209 ns
54.8 ns
STGW80H65FB-4
STGW80H65FB-4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2V, supports up to 120A collector current, and operates in temperatures from -55 °C to 175 °C. Its robust design includes a built-in diode and Kelvin sensor for enhanced performance.
SINGLE WITH BUILT-IN DIODE AND KELVIN SENSOR
STGWT30HP65FB
STGWT30HP65FB from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2V, supports up to 60A collector current, and operates in temperatures ranging from -55 °C to 175 °C. Its robust design ensures reliable performance in demanding environments.
169 ns
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