Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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FZ1800R12HE4B9HOSA2
Infineon Technologies
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 2735 A; Nominal Turn Off Time (toff): 1160 ns; JESD-30 Code: R-PUFM-X9;
ISOLATED
2735 A
1200 V
COMPLEX
R-PUFM-X9
1
3
9
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
N-CHANNEL
UL APPROVED
NO
UNSPECIFIED
UPPER
POWER CONTROL
SILICON
1160 ns
720 ns
FZ1800R17HE4B9HOSA2
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Case Connection: ISOLATED; Nominal Turn On Time (ton): 900 ns; Nominal Turn Off Time (toff): 1920 ns;
1700 V
1920 ns
900 ns
FZ2400R12HE4B9HOSA2
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 3560 A; JESD-30 Code: R-PUFM-X9; Package Body Material: PLASTIC/EPOXY;
3560 A
1320 ns
880 ns
FZ3600R17HE4HOSA2
FZ3600R17HE4HOSA2 by Infineon Technologies is an N-CHANNEL IGBT with 3 elements, 1700V max collector-emitter voltage, and 2245ns turn-off time. Ideal for power control applications, it features a complex configuration and UL approval in a rectangular package with flange mount style.
R-XUFM-X9
2245 ns
1075 ns
IGP20N65F5XKSA1
IGP20N65F5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 650V and a max collector current of 42A. It has a nominal turn-off time of 211ns and a turn-on time of 32ns, making it suitable for power control applications. The transistor comes in a rectangular package style with through-hole terminals for easy installation.
COLLECTOR
42 A
650 V
SINGLE
TO-220AB
R-PSFM-T3
e3
-40 Cel
TIN
THROUGH-HOLE
211 ns
32 ns
IGP20N65H5XKSA1
IGP20N65H5XKSA1 by Infineon is an N-CHANNEL IGBT with 650V max collector-emitter voltage and 42A max collector current. It has a single configuration, through-hole terminals, and is ideal for power control applications. With a turn-off time of 218ns and turn-on time of 28ns, it offers efficient switching performance.
218 ns
28 ns
IGP30N65F5XKSA1
Infineon's IGP30N65F5XKSA1 is an N-CHANNEL IGBT transistor with 650V max collector-emitter voltage and 55A max collector current. Ideal for power control applications, it has a single configuration, 206ns turn-off time, and 28ns turn-on time. Package style is flange mount with through-hole terminals in a rectangular shape.
55 A
206 ns
IGW30N60TPXKSA1
IGW30N60TPXKSA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a collector current of 53A. It has a turn-off time of 279ns and a turn-on time of 38ns, making it ideal for power control applications. The transistor comes in a rectangular package style with through-hole terminals for easy installation.
53 A
600 V
TO-247
279 ns
38 ns
IHW20N65R5XKSA1
IHW20N65R5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max voltage of 650V and current of 40A. It has a turn-off time of 310ns and turn-on time of 38ns, making it ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals, suitable for flange mount installations.
40 A
SINGLE WITH BUILT-IN DIODE
NOT SPECIFIED
310 ns
IHW30N65R5XKSA1
IHW30N65R5XKSA1 by Infineon is an N-CHANNEL IGBT with 650V max collector-emitter voltage and 60A max collector current. It has a built-in diode, 258ns turn-off time, and 44ns turn-on time. Ideal for power control applications due to its single configuration and flange mount package style.
60 A
258 ns
44 ns
IHW50N65R5XKSA1
IHW50N65R5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 650V and a max collector current of 80A. It has a nominal turn-on time of 51ns and a turn-off time of 261ns, making it ideal for power control applications requiring fast switching speeds. The transistor comes in a rectangular package with through-hole terminals, suitable for flange mount installations in various industrial settings.
80 A
261 ns
51 ns
FD1000R33HL3KBPSA1
Infineon's FD1000R33HL3KBPSA1 is a N-CHANNEL IGBT with 2 elements & built-in diode. It has a max Vce of 3300V, toff of 4700ns, and ton of 1050ns. Ideal for power control applications due to its common gate configuration and isolated case connection in a rectangular package style.
3300 V
COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE
2
4700 ns
1050 ns
FD16001200R17HP4B2BOSA2
Infineon's FD16001200R17HP4B2BOSA2 IGBT features N-CHANNEL polarity, COMPLEX configuration, and 1700V max. collector-emitter voltage. Ideal for POWER CONTROL applications with 1710ns turn-off time and 650ns turn-on time. Package style is FLANGE MOUNT with 9 terminals in RECTANGULAR shape.
1710 ns
650 ns
FT150R12KE3GB4BDLA1
Infineon Technologies' FT150R12KE3GB4BDLA1 is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 200A. It is commonly used for power control applications due to its common collector configuration and built-in diode and resistor.
200 A
COMMON COLLECTOR, 3 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
R-XUFM-X39
39
150 Cel
850 ns
350 ns
IKP20N65F5XKSA1
IKP20N65F5XKSA1 by Infineon is an N-CHANNEL IGBT with 650V max collector-emitter voltage and 42A max collector current. It has a turn-off time of 211ns and turn-on time of 32ns, suitable for power control applications. The transistor comes in a rectangular package with through-hole terminals and built-in diode.
IKP20N65H5XKSA1
IKP20N65H5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 650V and a Max Collector Current of 42A. It has a Nominal Turn Off Time of 218ns and Nominal Turn On Time of 28ns, making it ideal for POWER CONTROL applications. The transistor comes in a RECTANGULAR package style with THROUGH-HOLE terminals and built-in diode configuration.
IKP30N65F5XKSA1
IKP30N65F5XKSA1 by Infineon is an N-CHANNEL IGBT with 650V max collector-emitter voltage and 55A max collector current. Ideal for power control applications, it has a single configuration with built-in diode and a nominal turn-off time of 206ns.
IKP30N65H5XKSA1
IKP30N65H5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with 650V max collector-emitter voltage, 55A max collector current, and 224ns turn-off time. Ideal for power control applications due to its single configuration with built-in diode and silicon transistor element material. Suitable for use in various systems requiring efficient power management.
224 ns
IKW30N65NL5XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 85 A; Package Style (Meter): FLANGE MOUNT; Package Body Material: PLASTIC/EPOXY;
85 A
514 ns
76 ns
IKW30N65ES5XKSA1
IKW30N65ES5XKSA1 by Infineon is an N-CHANNEL IGBT with 650V max collector-emitter voltage and 62A max collector current. It has a single configuration with built-in diode, ideal for power control applications. Featuring a turn-off time of 204ns and turn-on time of 30ns, it operates in temperatures as low as -40°C.
62 A
204 ns
30 ns
IKW30N65WR5XKSA1
IKW30N65WR5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max VCE of 650V and IC of 60A. It has a toff of 429ns and ton of 49ns, making it ideal for POWER CONTROL applications. The transistor comes in a PLASTIC/EPOXY package style with THROUGH-HOLE terminals.
429 ns
49 ns
IKW40N65WR5XKSA1
IKW40N65WR5XKSA1 by Infineon is an N-CHANNEL IGBT with 650V max collector-emitter voltage and 80A max collector current. It has a single configuration with built-in diode, ideal for power control applications. Featuring a turn-off time of 510ns and turn-on time of 63ns, it operates at temperatures as low as -40°C.
510 ns
63 ns
IKW50N65ES5XKSA1
Infineon IKW50N65ES5XKSA1 is an N-CHANNEL IGBT with VCEsat of 1.7V, IC of 80A, and Pmax of 274W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 198ns and high operating temperature range (-40 to 175°C). Package: PLASTIC/EPOXY, Shape: RECTANGULAR, Terminals: THROUGH-HOLE.
4.8 V
20 V
175 Cel
274 W
198 ns
45 ns
1.7 V
IKW50N65WR5XKSA1
IKW50N65WR5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max voltage of 650V and collector current of 80A. It features a turn-off time of 507ns and turn-on time of 62ns, making it ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals and built-in diode.
507 ns
62 ns
FF1400R12IP4PBOSA1
FF1400R12IP4PBOSA1 by Infineon Technologies is an IGBT with 2 N-CHANNEL elements in a SERIES CONNECTED configuration. It has a Max Collector-Emitter Voltage of 1200V and Nominal Turn Off Time of 1200ns, making it ideal for POWER CONTROL applications. The package style is FLANGE MOUNT with PLASTIC/EPOXY body material, suitable for various industrial uses.
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
R-PUFM-X12
12
IEC-61140; UL APPROVED
1200 ns
340 ns
IKQ100N60TXKSA1
IKQ100N60TXKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max collector current of 160A. It is designed for power control applications and has a nominal turn-off time of 393ns.
160 A
393 ns
83 ns
IKW50N65EH5XKSA1
IKW50N65EH5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with 650V max collector-emitter voltage and 80A max collector current. It features a single configuration with built-in diode, ideal for power control applications. With a turn-off time of 220ns and turn-on time of 54ns, it offers efficient performance in through-hole package style.
220 ns
54 ns
IKZ75N65EL5XKSA1
IKZ75N65EL5XKSA1 by Infineon is an N-CHANNEL IGBT with 650V VCE, 100A IC, and 536W power dissipation. Ideal for POWER CONTROL applications due to its low VCEsat of 1.35V and fast switching times (ton:133ns, toff:474ns). Package style is FLANGE MOUNT with THROUGH-HOLE terminals.
100 A
5.8 V
R-PSFM-T4
4
536 W
474 ns
133 ns
1.35 V
FF1000R17IE4DPB2BOSA1
FF1000R17IE4DPB2BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1700V max collector-emitter voltage. It features a series connected, center tap configuration with 2 elements and built-in diode for power control applications. This UL approved transistor has a nominal turn off time of 1910ns and turn on time of 830ns, making it ideal for high-power switching operations.
1910 ns
830 ns
FF1200R12IE5BPSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector-Emitter Voltage: 1200 V; Package Style (Meter): FLANGE MOUNT; JESD-30 Code: R-PUFM-X10;
R-PUFM-X10
10
680 ns
430 ns
FF900R12IP4DVBOSA1
FF900R12IP4DVBOSA1 by Infineon is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a 1300 ns turn off time, and 1200 V max collector-emitter voltage. It is used in applications requiring high power switching such as motor drives and renewable energy systems.
GENERAL PURPOSE
1300 ns
370 ns
FF900R12IP4PBOSA1
FF900R12IP4PBOSA1 by Infineon Technologies is an IGBT with 2 N-CHANNEL elements, built-in diode, and thermistor. It has a max voltage of 1200V and turn-off time of 1300ns. Ideal for power control applications, this UL approved transistor operates from -40°C with a turn-on time of 370ns.
FF900R12IP4VBOSA1
FF900R12IP4VBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V. It has a nominal turn-off time of 1300ns and a nominal turn-on time of 370ns. This IGBT is commonly used in applications requiring high power switching, such as motor drives and inverters.
FF1000R17IE4PBOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Reference Standard: UL APPROVED; Package Shape: RECTANGULAR; No. of Terminals: 12;
1890 ns
FF1400R17IP4PBOSA1
Infineon Technologies' FF1400R17IP4PBOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max Vce of 1700V and toff of 2190ns. Ideal for power control applications, this UL APPROVED transistor operates from -40°C with a turn-on time of 1030ns.
2190 ns
1030 ns
FF1800R12IE5BPSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; JESD-30 Code: R-PUFM-X14; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
R-PUFM-X14
14
800 ns
FF1800R17IP5BPSA1
FF1800R17IP5BPSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 elements, diode, and thermistor. It has a max Vce of 1700V and toff of 1060ns. Ideal for power control applications due to its series connected configuration.
1060 ns
530 ns
FF200R12KE4PHOSA1
FF200R12KE4PHOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max Collector-Emitter Voltage of 1200V and Nominal Turn Off Time of 800ns, making it ideal for POWER CONTROL applications. The transistor is UL APPROVED and operates in temperatures as low as -40°C.
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
R-XUFM-X7
7
325 ns
FF300R12KE4PHOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 2; Peak Reflow Temperature (C): NOT SPECIFIED; JESD-30 Code: R-XUFM-X7;
FF300R12KS4PHOSA1
FF300R12KS4PHOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max Collector-Emitter Voltage of 1200V and Nominal Turn Off Time of 590ns, making it ideal for POWER CONTROL applications. This UL APPROVED transistor operates from -40°C with a fast Nominal Turn On Time of 180ns.
590 ns
180 ns
FF300R12KT3PEHOSA1
N-CHANNEL; Configuration: COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum VCEsat: 2.15 V; Maximum Collector-Emitter Voltage: 1200 V; Case Connection: ISOLATED;
COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE
6.5 V
125 Cel
215 ns
2.15 V
FF300R12KT4PHOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Nominal Turn Off Time (toff): 720 ns; Case Connection: ISOLATED; Package Body Material: UNSPECIFIED;
6.4 V
230 ns
FF400R12KT3PEHOSA1
N-CHANNEL; Configuration: COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Reference Standard: UL APPROVED; Package Style (Meter): FLANGE MOUNT; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
FF400R17KE4EHOSA1
FF400R17KE4EHOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 elements and built-in diode. It has a max VCEsat of 2.3V, ideal for power control applications. With a max operating temperature of 150°C and collector-emitter voltage of 1700V, it offers efficient performance in high-power systems.
6.25 V
320 ns
2.3 V
FF400R17KE4HOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Minimum Operating Temperature: -40 Cel; Peak Reflow Temperature (C): NOT SPECIFIED; Package Shape: RECTANGULAR;
FF450R12KE4EHOSA1
FF450R12KE4EHOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 elements and built-in diode. It has a max collector-emitter voltage of 1200V, collector current of 520A, and turn-off time of 800ns. Ideal for power control applications, this transistor operates at temperatures as low as -40°C and is UL approved.
520 A
FF450R12KE4PHOSA1
FF450R12KE4PHOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max Collector-Emitter Voltage of 1200V and Nominal Turn Off Time of 800ns, making it ideal for POWER CONTROL applications. The transistor is UL APPROVED and operates in temperatures as low as -40°C.
FF450R12KT4PHOSA1
FF450R12KT4PHOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max Collector-Emitter Voltage of 1200V and Nominal Turn Off Time of 720ns, making it ideal for POWER CONTROL applications. The transistor operates at temperatures as low as -40°C and comes in a RECTANGULAR package style with 7 terminals.
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