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IGP30N65F5XKSA1

Infineon Technologies

IGP30N65F5XKSA1 by Infineon Technologies

Infineon's IGP30N65F5XKSA1 is an N-CHANNEL IGBT transistor with 650V max collector-emitter voltage and 55A max collector current. Ideal for power control applications, it has a single configuration, 206ns turn-off time, and 28ns turn-on time. Package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

$2.490

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 419 parts In-Stock

1+ parts

$1.640

100+ parts

$1.520

1k+ parts

$1.400

10k+ parts

$1.360

419

$1.640

$1.520

$1.400

$1.360

Farnell

UK . 500 parts In-Stock

1+ parts

$2.490

100+ parts

$1.350

1k+ parts

$1.050

10k+ parts

-

500

$2.490

$1.350

$1.050

-

DigiKey

USA . 2 parts In-Stock

1+ parts

$2.730

100+ parts

-

1k+ parts

-

10k+ parts

-

2

$2.730

-

-

-

Chip1Stop

Japan . 497 parts In-Stock

1+ parts

$3.000

100+ parts

$1.550

1k+ parts

-

10k+ parts

-

497

$3.000

$1.550

-

-

Element14

Singapore . 500 parts In-Stock

1+ parts

$4.030

100+ parts

$2.470

1k+ parts

$1.910

10k+ parts

-

500

$4.030

$2.470

$1.910

-

Verical

USA . 386 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.131

10k+ parts

$1.008

386

-

-

$1.131

$1.008

Rochester

USA . 386 parts In-Stock

1+ parts

-

100+ parts

$1.090

1k+ parts

$0.905

10k+ parts

$0.807

386

-

$1.090

$0.905

$0.807

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 196 parts In-Stock

1+ parts

$1.340

100+ parts

-

1k+ parts

-

10k+ parts

-

196

$1.340

-

-

-

Nova Conductors

Japan . 650 parts In-Stock

1+ parts

$1.791

100+ parts

-

1k+ parts

-

10k+ parts

-

650

$1.791

-

-

-

Vyrian

USA . 4,283 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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4,283

-

-

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Modulus Dynamics

Lithuania . 25,162 parts In-Stock

1+ parts

$1.208

100+ parts

$1.160

1k+ parts

$1.111

10k+ parts

-

25,162

$1.208

$1.160

$1.111

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Ampacity Inc.

Singapore . 4,861 parts In-Stock

1+ parts

$1.240

100+ parts

-

1k+ parts

-

10k+ parts

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4,861

$1.240

-

-

-

Corphita

USA . 495 parts In-Stock

1+ parts

$1.269

100+ parts

-

1k+ parts

-

10k+ parts

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495

$1.269

-

-

-

Continental Prestige Electronics

USA . 2,922 parts In-Stock

1+ parts

$1.791

100+ parts

-

1k+ parts

-

10k+ parts

$1.755

2,922

$1.791

-

-

$1.755

Argo Parts USA

USA . 407 parts In-Stock

1+ parts

$1.791

100+ parts

-

1k+ parts

-

10k+ parts

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407

$1.791

-

-

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Netroflash

USA . 50 parts In-Stock

1+ parts

$1.791

100+ parts

-

1k+ parts

$1.701

10k+ parts

$1.666

50

$1.791

-

$1.701

$1.666

Microchip USA

USA . 436 parts In-Stock

1+ parts

$20.280

100+ parts

-

1k+ parts

-

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436

$20.280

-

-

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Perfect Parts

USA . 28,151 parts In-Stock

1+ parts

-

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28,151

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Lixinc

USA . 14,355 parts In-Stock

1+ parts

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14,355

-

-

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iodParts Technologies Inc.

India . 551 parts In-Stock

1+ parts

-

100+ parts

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551

-

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Authorized Procurement Solutions

USA . 500 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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500

-

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Overview

Unleash the power of Infineon Technologies with the IGP30N65F5XKSA1 Insulated Gate Bipolar Transistor. Known for its exceptional quality and reliability, this N-CHANNEL transistor is a game-changer in power control applications. With a maximum collector-emitter voltage of 650V and a nominal turn-off time of just 206ns, this transistor offers unmatched performance and efficiency. Whether you're looking to optimize your power management system or upgrade your industrial equipment, the IGP30N65F5XKSA1 delivers value and benefits that will exceed your expectations. Trust Infineon Technologies to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and protection to the IGBT, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically offer better performance and efficiency compared to P-channel IGBTs, making this product a good choice for power control applications.

Configuration: SINGLE

The single configuration simplifies the setup and operation of the IGBT, making it user-friendly and easy to integrate into circuits.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, this IGBT ensures reliable and efficient operation in high-power systems.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and installation, making it suitable for various electronic systems.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides secure connections and easy soldering, ensuring reliable performance in demanding environments.

Nominal Turn Off Time (toff): 206 ns

The fast turn-off time of 206 ns enables quick switching and control of the power output, enhancing the overall efficiency of the system.

No. of Terminals: 3

With three terminals, this IGBT offers flexibility in circuit design and connectivity options, allowing for customization based on specific requirements.

Package Style (Meter): FLANGE MOUNT

The flange mount package style allows for secure and stable mounting, reducing the risk of damage or disconnection in industrial applications.

Maximum Collector-Emitter Voltage: 650 V

The high maximum collector-emitter voltage of 650 V provides a wide voltage range for power control applications, making this IGBT suitable for diverse voltage levels.

Transistor Element Material: SILICON

Silicon IGBTs offer high performance and reliability, ensuring long-term operation in demanding environments and industrial applications.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40°C, this IGBT can operate effectively in extreme temperature conditions, making it suitable for outdoor and harsh environments.

Maximum Collector Current (IC): 55 A

The high maximum collector current of 55 A allows for efficient power handling and control, making this IGBT suitable for high-power applications.

Terminal Finish: TIN

The tin terminal finish provides corrosion resistance and reliable soldering connections, ensuring long-term performance and durability of the IGBT.

Terminal Position: SINGLE

The single terminal position simplifies the wiring and connection process, making it easy to integrate this IGBT into various electronic systems.

Case Connection: COLLECTOR

The case connection at the collector terminal provides a secure and stable connection, enhancing the overall reliability and performance of the IGBT in power control applications.

Nominal Turn On Time (ton): 28 ns

The fast turn-on time of 28 ns enables quick switching and response, allowing for precise control and modulation of the power output in electronic systems.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IGP30N65F5XKSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Configuration:

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

206 ns

Nominal Turn On Time (ton):

28 ns

Trade Compliance

IGP30N65F5XKSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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