Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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FF1000R17IE4DPB2BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1700V max collector-emitter voltage. It features a series connected, center tap configuration with 2 elements and built-in diode for power control applications. This UL approved transistor has a nominal turn off time of 1910ns and turn on time of 830ns, making it ideal for high-power switching operations.
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Netroflash
QUARKTWIN TECHNOLOGY LTD
Authorized Procurement Solutions
The use of plastic/epoxy material in the package body provides good insulation and protection for the components inside, making it a durable and reliable choice.
The N-channel type allows for efficient power control, making this IGBT suitable for a variety of industrial applications requiring high power handling capabilities.
This complex configuration offers enhanced performance and functionality, making it ideal for demanding power control applications where precision and reliability are crucial.
Specifically designed for power control applications, this IGBT provides precise and efficient control over high power levels, making it a suitable choice for demanding industrial environments.
The rectangular shape of the package allows for easy mounting and installation, making it convenient to integrate this IGBT into existing systems or designs.
With two elements in the package, this IGBT offers increased power handling capacity and redundancy, ensuring reliable operation under heavy load conditions.
The fast turn-off time of 1910 ns allows for quick power switching, reducing heat generation and improving efficiency in power control applications.
The 12 terminals provide ample connection points for easy integration into complex power control systems, offering flexibility and versatility in design and installation.
The flange mount style allows for secure attachment to a mounting surface, providing stability and heat dissipation for optimal performance in power control applications.
With a high maximum collector-emitter voltage of 1700 V, this IGBT is capable of handling high power levels safely, making it suitable for a wide range of industrial applications.
The use of silicon as the transistor element material ensures high performance and reliability, making this IGBT a durable and long-lasting choice for power control applications.
The IGBT's ability to operate at temperatures as low as -40°C ensures reliable performance in harsh environmental conditions, making it a versatile and dependable choice for various industrial applications.
The upper terminal position allows for easy access and connection, simplifying installation and maintenance procedures for improved efficiency in power control applications.
The isolated case connection provides electrical insulation and protection, reducing the risk of short circuits and ensuring safe operation in power control systems.
The fast turn-on time of 830 ns enables quick power activation, enhancing responsiveness and control in power control applications for improved performance and efficiency.
Being UL approved, this IGBT meets stringent safety and quality standards, ensuring reliable and compliant operation in a variety of industrial applications.
Insulated Gate Bipolar Transistors (IGBT) FF1000R17IE4DPB2BOSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies
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FF1000R17IE4DPB2BOSA1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
BAV99
Panjit International
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
EU2B-YS2J03F
Idec
ROTARY SWITCH;
STM32F401CDY6TR
STMicroelectronics
STM32F401CDY6TR by STMicroelectronics is a 32-bit microcontroller with 393216 ROM words, 50 MHz clock frequency, and 36 I/O lines. It is used in applications requiring high-speed processing, such as industrial automation and consumer electronics.
CL31B104KBCNNNC
Samsung Electro-mechanics
Samsung Electro-mechanics CL31B104KBCNNNC is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. It features X7R temperature characteristics, -55 to 125 °C operating range, and compact SMT package style. Ideal for applications requiring high reliability in compact electronic devices.
1N4148
Capar Components
RECTIFIER DIODE; Surface Mount: NO; No. of Phases: 1; Maximum Forward Voltage (VF): 1 V; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Output Current: .15 A;
Sprague Electric
RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): 1.3 V; Maximum Output Current: .1 A; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 175 Cel;
Temic Semiconductors
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Transys Electronics
Semitronics
Kingwell Technonlogy
1N4148WS
Bytesonic Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Eic Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SMBJ18CA
Pro-an Electronic
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Polarity: BIDIRECTIONAL; Nominal Breakdown Voltage: 21.05 V; Maximum Repetitive Peak Reverse Voltage: 18 V;
M39029/58-360
Molex
CONNECTOR ACCESSORY; Alternate Contact Sources: MILITARY; Removal Tool Sources: MILITARY; Material: COPPER ALLOY; National Stock Number (NSN): 5999004733551; Mating Contacts: M39029/56-348, M39029/57-354;
NE555D
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
Texas Instruments
1N4148 by Texas Instruments is a rectifier diode with max reverse recovery time of 0.004 us and max forward voltage of 1V. Ideal for applications requiring low reverse current such as signal demodulation circuits. Operates at max temp of 200°C, making it suitable for high-temperature environments.
M39029/58360
Esterline Technologies
CONNECTOR ACCESSORY; Terminal Type: CRIMP; Removal Tools: M81969/14-01; Associated Military - Specifications: MIL-DTL-38999; IEC Conformity: NO; MIL-Connector Accessory Name: CONTACT;
LM317T/NOPB
National Semiconductor
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; JESD-609 Code: e3; Package Shape: RECTANGULAR;
2N7002
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IKD06N60RATMA1
IKD06N60RATMA1 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 12A max collector current. It has a built-in diode, 335ns turn-off time, and 22ns turn-on time. Ideal for power control applications due to its 100W max power dissipation and small outline package style.
HGTD1N120BNS9A
Harris Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 5.3 A; JESD-30 Code: R-PSSO-G2; Package Shape: RECTANGULAR;
IRG4BC30FD1PBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 31 A; Maximum Operating Temperature: 150 Cel;
F475R12KS4BOSA1
F475R12KS4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 banks, series connected, center tap, and 2 elements with built-in diode. It has a max VCEsat of 3.75V and a max collector-emitter voltage of 1200V, making it ideal for power control applications requiring high voltage handling capabilities. With a nominal turn-off time of 390ns and a max power dissipation of 500W, this rectangular package transistor offers efficient performance in various power control systems.
FF600R12ME4B11BPSA1
Infineon Technologies' FF600R12ME4B11BPSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max voltage of 1200V and current of 995A, ideal for power control applications. Featuring a turn off time of 770ns and turn on time of 310ns, it is UL RECOGNIZED and comes in a FLANGE MOUNT package style.
FGH40N60UFDTU
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 80 A; Nominal Turn On Time (ton): 110 ns;
IXBH10N170
IXYS Corporation
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 140 W; Maximum Collector Current (IC): 20 A; Terminal Form: THROUGH-HOLE;
FS50R12KE3
Eupec & Kg
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 270 W; Maximum Collector Current (IC): 75 A; Package Shape: RECTANGULAR;
HGTG30N60A4D
Onsemi
HGTG30N60A4D by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max collector current of 75A. It has a nominal turn-off time of 238ns and a turn-on time of 35ns, making it ideal for power control applications requiring fast switching speeds. The transistor comes in a rectangular package style with through-hole terminals, suitable for flange mount installations at temperatures up to 150°C.
IRG4PC30UPBF
IRG4PC30UPBF by Infineon is an N-CHANNEL IGBT with 600V VCE, 23A IC, and 100W Ptot. Ideal for POWER CONTROL applications due to its fast switching times (ton: 33ns, toff: 320ns) and high operating temperature of 150°C. Package style is FLANGE MOUNT with THROUGH-HOLE terminals.
IRGR2B60KDPBF
Infineon's IRGR2B60KDPBF is an N-CHANNEL IGBT with 600V VCE, 6.3A IC, and 35W power dissipation. Ideal for surface mount applications, it offers fast tr of 25ns and tf of 75ns. This device operates up to 150°C making it suitable for various power electronics systems.
IRG4PC30UDPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 23 A; Nominal Turn Off Time (toff): 300 ns;
IXXX300N60C3
Littelfuse
IXXX300N60C3 by Littelfuse is an N-CHANNEL IGBT with 600V VCEsat, 510A IC, and 2300W power dissipation. Ideal for POWER CONTROL applications, it has a fast turn-off time of 278ns and operates b/w -55 to 175 °C temperatures.
NGTB50N120FL2WG
NGTB50N120FL2WG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 100A IC, and 535W Pd. Ideal for high-power applications like motor drives, inverters, and power supplies due to its robust design and high operating temperature of 175°C.
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 35 W; Maximum Collector Current (IC): 6.3 A; Maximum Gate-Emitter Threshold Voltage: 6 V; Maximum Collector-Emitter Voltage: 600 V;
APT50GP60BG
Microchip Technology
APT50GP60BG by Microchip Technology is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 100A. It has a nominal turn-off time of 202ns and a turn-on time of 55ns, making it ideal for power control applications. The transistor comes in a rectangular package style with through-hole terminals and operates at temperatures up to 150°C.
IXDR35N60BD1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 38 A; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PSIP-T3;
HGTG18N120BND
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 390 W; Maximum Collector Current (IC): 54 A; JESD-30 Code: R-PSFM-T3;
IRG4RC10SDPBF
IRG4RC10SDPBF by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 600V and Max Collector Current of 14A. It is designed for POWER CONTROL applications, featuring a small outline package style and built-in diode for efficient performance in power electronics systems.
IRG4BC40WLPBF
IRG4BC40WLPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 40A. It has a power dissipation of 160W, making it suitable for power control applications. With a turn-off time of 294ns and turn-on time of 48ns, it offers efficient performance in high-power systems.
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FF100R12RT4HOSA1
FF100R12RT4HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max voltage of 1200V and turn off time of 490ns, suitable for POWER CONTROL applications. The transistor operates at up to 175°C and features a built-in diode in its RECTANGULAR package style.
FF1000R17IE4BOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 1390 A; Qualification: Not Qualified; Case Connection: ISOLATED;
FF1000R17IE4DB2BOSA1
Infineon's FF1000R17IE4DB2BOSA1 IGBT features N-CHANNEL configuration with 2 elements, built-in diode, and thermistor. Ideal for power control applications with max VCEsat of 2.45V and max IC of 1390A. Operates in temp range -40 to 150°C, offering high power dissipation up to 6250W.
FF1000R17IE4
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 6250 W; Maximum Collector Current (IC): 1390 A; Maximum Operating Temperature: 175 Cel;
FF1000R17IE4D-B2
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 6250 W; Maximum Collector Current (IC): 4000 A; No. of Terminals: 10;
FF1000R17IE4DP_B2
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Gate-Emitter Threshold Voltage: 6.4 V; Case Connection: ISOLATED; Maximum VCEsat: 2.45 V;
FF1000R17IE4F
N-Channel; Maximum Power Dissipation (Abs): 6250 W; Maximum Collector Current (IC): 1390 A; Nominal Turn Off Time (toff): 1890 ns; Minimum Operating Temperature: -40 Cel; Maximum VCEsat: 2.45 V;
FF1000R17IE4P
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Transistor Application: POWER CONTROL; Terminal Position: UPPER;
FF1000R17IE4PBOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Reference Standard: UL APPROVED; Package Shape: RECTANGULAR; No. of Terminals: 12;
FF100R12KS4
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 780 W; Maximum Collector Current (IC): 150 A; Package Shape: RECTANGULAR;
FF100R12KS4HOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 150 A; Package Body Material: UNSPECIFIED; No. of Elements: 2;
FF100R12MT4
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 135 A; JESD-30 Code: R-XUFM-X10; Nominal Turn On Time (ton): 190 ns;
FF100R12MT4BOMA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 135 A; Nominal Turn Off Time (toff): 600 ns; Package Style (Meter): FLANGE MOUNT;
FF100R12RT4
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 555 W; Maximum Collector Current (IC): 100 A; Maximum VCEsat: 2.15 V;
FF100R12YT3
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 445 W; Maximum Collector Current (IC): 140 A; Maximum Gate-Emitter Voltage: 20 V;
FF100R12YT3_B60
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 445 W; Maximum Collector Current (IC): 140 A; Package Style (Meter): FLANGE MOUNT;
FF100R12YT3BOMA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 140 A; Nominal Turn On Time (ton): 187 ns; Nominal Turn Off Time (toff): 680 ns;
FF100R12YT3ENG
N-Channel; Maximum Power Dissipation (Abs): 445 W; Maximum Collector Current (IC): 140 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Maximum VCEsat: 2.15 V; Maximum Gate-Emitter Voltage: 20 V;
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