Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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FB10R06KL4GB1BOMA1
Infineon Technologies
Infineon Technologies' FB10R06KL4GB1BOMA1 is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 15A max collector current, and 260ns nominal turn-off time. It has a complex configuration with 7 elements in a rectangular package style for flange mount applications.
ISOLATED
15 A
600 V
COMPLEX
R-XUFM-X22
7
22
UNSPECIFIED
RECTANGULAR
FLANGE MOUNT
N-CHANNEL
NO
UPPER
SILICON
260 ns
58 ns
FB15R06KL4B1BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 19 A; Transistor Element Material: SILICON; Maximum Operating Temperature: 150 Cel;
19 A
R-XUFM-X26
26
150 Cel
249 ns
71 ns
FS3L25R12W2H3B11BPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 40 A; No. of Elements: 12; Transistor Element Material: SILICON;
40 A
1200 V
R-XUFM-X34
12
34
-40 Cel
NOT SPECIFIED
UL APPROVED
GENERAL PURPOSE
295 ns
95 ns
IFF300B12N2E4PB11BPSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE, RESISTOR AND THERMISTOR; Surface Mount: NO; Minimum Operating Temperature: -40 Cel; Maximum Collector-Emitter Voltage: 1200 V; No. of Terminals: 28;
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE, RESISTOR AND THERMISTOR
R-XUFM-X28
2
28
UL RECOGNIZED
POWER CONTROL
540 ns
310 ns
FGY100T65SCDT
Onsemi
FGY100T65SCDT by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.9V and a max IC of 200A. Ideal for GENERAL PURPOSE SWITCHING applications, it has a max operating temperature of 175 °C and a nominal turn off time of 410ns.
FAST SWITCHING
COLLECTOR
200 A
650 V
SINGLE WITH BUILT-IN DIODE
6.9 V
25 V
TO-247
R-PSFM-T3
e3
1
3
175 Cel
-55 Cel
PLASTIC/EPOXY
750 W
MATTE TIN
THROUGH-HOLE
SINGLE
GENERAL PURPOSE SWITCHING
410 ns
240 ns
1.9 V
DF100R07W1H5FPB53BPSA1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 40 A; Minimum Operating Temperature: -40 Cel; JESD-30 Code: R-XUFM-X26;
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
40 ns
17 ns
DF100R07W1H5FPB53BPSA2
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 40 A; No. of Elements: 2; Terminal Position: UPPER;
IFF450B12ME4PB11BPSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE CURRENT SENSING RESISTOR AND THERMISTOR; Surface Mount: NO; Maximum Collector-Emitter Voltage: 1200 V; JESD-30 Code: R-XUFM-X13; Terminal Form: UNSPECIFIED;
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE CURRENT SENSING RESISTOR AND THERMISTOR
R-XUFM-X13
13
690 ns
250 ns
IFF600B12ME4PB11BPSA1
Infineon Technologies IFF600B12ME4PB11BPSA1 is a N-CHANNEL IGBT with 2 elements, built-in diode, and thermistor. It has a max Vce of 1200V, toff of 750ns, and ton of 250ns. Ideal for power control applications due to UL recognition and isolated case connection.
750 ns
FGH40T100SMD-F155
FGH40T100SMD-F155 by Onsemi is an N-CHANNEL IGBT with 1000V VCEsat, 80A IC, and 333W power dissipation. Ideal for power control applications, it features a single configuration with built-in diode in a rectangular package suitable for flange mount installations.
80 A
1000 V
30 ns
6.5 V
20 V
TO-247AB
333 W
64 ns
397 ns
305 ns
100 ns
76 ns
2.3 V
A1C15S12M3-F
STMicroelectronics
A1C15S12M3-F by STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 2.45V, supports up to 1200V collector-emitter voltage, and operates efficiently at temperatures from -40 °C to 150 °C. With a compact flange mount design, it excels in high-power systems.
7 V
R-XUFM-X23
23
142.8 W
199 ns
134.5 ns
2.45 V
A1C15S12M3
STMicroelectronics A1C15S12M3 is an N-CHANNEL IGBT for POWER CONTROL applications. It features a Max VCEsat of 2.45V, Nominal Turn Off Time of 199ns, and Max Collector Current of 15A. Ideal for high-power systems requiring efficient switching with a max operating temperature of 150°C.
A1P25S12M3
A1P25S12M3 by STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2.45V, supports up to 197W dissipation, and operates b/w -40 °C to 150 °C. Ideal for complex applications requiring robust performance.
25 A
6
197 W
326 ns
139 ns
A1P35S12M3
A1P35S12M3 by STMicroelectronics is a complex N-channel IGBT designed for power control applications. It features a max VCEsat of 2.45V, supports up to 250W power dissipation, and operates b/w -40 °C to 150 °C. Ideal for high-efficiency switching in industrial systems.
35 A
250 W
398 ns
142 ns
A1P50S65M2-F
A1P50S65M2-F by STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 2.3V, supports up to 50A collector current, and operates at temperatures from -40 °C to 150 °C. Ideal for high-efficiency power management systems.
50 A
208 W
331 ns
167.2 ns
A1P50S65M2
A1P50S65M2 by STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 2.3V, supports up to 650V collector-emitter voltage, and operates efficiently at temperatures from -40 °C to 150 °C. With a robust design, it handles up to 208W power dissipation.
A2C25S12M3-F
STMicroelectronics A2C25S12M3-F is an N-CHANNEL IGBT for POWER CONTROL applications. With VCEsat of 2.45V, IC of 25A, and toff of 338ns, it offers efficient power management. Operating b/w -40°C to 150°C, this transistor has a max VCE of 1200V in a RECTANGULAR package with 35 terminals.
R-XUFM-X35
35
338 ns
125.2 ns
A2C25S12M3
A2C25S12M3 by STMicroelectronics is an N-channel IGBT designed for motor control applications. It features a max VCEsat of 2.45V, 1200V collector-emitter voltage, and operates efficiently at temperatures from -40 °C to 150 °C. Its robust design includes a bridge configuration with built-in diodes.
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
MOTOR CONTROL
A2C35S12M3-F
A2C35S12M3-F by STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 2.45V, supports up to 250W power dissipation, and operates b/w -40 °C to 150 °C. Ideal for high-efficiency switching in industrial systems.
364 ns
145 ns
A2C35S12M3
A2C35S12M3 by STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 2.45V, supports up to 250W power dissipation, and operates b/w -40 °C to 150 °C. Ideal for high-efficiency power management in industrial systems.
170 ns
A2C50S65M2-F
A2C50S65M2-F by STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 2.3V, supports up to 650V collector-emitter voltage, and operates efficiently at temperatures from -40 °C to 150 °C. With a power dissipation of 208W, it's ideal for high-performance systems.
298 ns
167 ns
A2C50S65M2
A2C50S65M2 by STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 2.3V, supports up to 50A collector current, and operates in temperatures from -40 °C to 150 °C. Ideal for high-efficiency power management systems.
STGWA30H65FB
STGWA30H65FB from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2V, supports up to 60A collector current, and operates in temperatures ranging from -55 °C to 175 °C. Ideal for high-performance switching tasks, it ensures reliable operation with minimal losses.
60 A
260 W
223 ns
51.1 ns
2 V
MG0675S-BN4MM
Littelfuse
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 100 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Operating Temperature: 150 Cel;
100 A
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
R-XUFM-X7
45 ns
NGTB40N65IHRTG
NGTB40N65IHRTG by Onsemi is an N-CHANNEL IGBT with VCEsat of 1.7V, IC of 80A, and toff of 316ns. Ideal for POWER CONTROL applications due to its high power dissipation of 405W and max VCE of 650V. The package style is FLANGE MOUNT with a COLLECTOR case connection.
LOW CONDUCTION LOSS
405 W
TIN
316 ns
1.7 V
NXH160T120L2Q2F2SG
NXH160T120L2Q2F2SG by Onsemi is an N-CHANNEL IGBT with 1200V VCEsat, 181A IC, and 500W power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time of 435ns and high operating temperature range from -40°C to 125°C. The COMPLEX configuration and RECTANGULAR package shape make it suitable for various industrial uses.
181 A
6.4 V
R-XUFM-X56
4
56
125 Cel
500 W
435 ns
150 ns
2.7 V
AIGW50N65F5XKSA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 270 W; Maximum Collector Current (IC): 80 A; Package Style (Meter): FLANGE MOUNT;
4.8 V
270 W
AEC-Q101
196 ns
35 ns
2.1 V
AIGW50N65H5XKSA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 270 W; Maximum Collector Current (IC): 80 A; Transistor Element Material: SILICON;
213 ns
33 ns
AIKW40N65DH5XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 166 W; Maximum Collector Current (IC): 40 A; Maximum Operating Temperature: 175 Cel;
5.7 V
166 W
299 ns
36 ns
2.05 V
F475R07W2H3B51BPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 75 A; Terminal Position: UPPER;
75 A
R-XUFM-X18
18
300 ns
1.55 V
FS600R07A2E3B32BOSA1
Infineon's FS600R07A2E3B32BOSA1 is an N-CHANNEL IGBT with 6 elements, 33 terminals, and max VCEsat of 1.6V. Ideal for power control applications, it features a max collector-emitter voltage of 650V and can handle up to 530A collector current efficiently. With a package style of FLANGE MOUNT and operating temperature range from -40°C to 150°C, this IGBT offers reliable performance in various power systems.
530 A
3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
R-XUFM-X33
33
1250 W
190 ns
1.6 V
IKA10N65ET6XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 15 A; Package Shape: RECTANGULAR;
TO-220AB
40 W
152 ns
48 ns
IKFW40N60DH3EXKSA1
IKFW40N60DH3EXKSA1 by Infineon is an N-CHANNEL IGBT with 600V VCE, 34A IC, and 2.7V VCEsat. Ideal for POWER CONTROL applications, it has a turn-off time of 184ns and operates b/w -40 to 175°C.
34 A
111 W
184 ns
50 ns
IKFW50N60DH3EXKSA1
IKFW50N60DH3EXKSA1 by Infineon is an N-CHANNEL IGBT with 600V VCE, 40A IC, and 130W power dissipation. Ideal for power control applications, it features a built-in diode, 220ns turn-off time, and -40 to 175°C operating temperature range.
130 W
220 ns
IKFW60N60DH3EXKSA1
IKFW60N60DH3EXKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 2.7V and a max collector current (IC) of 53A. It is commonly used for power control applications due to its high power dissipation of 141W and fast nominal turn on time (ton) of 60ns.
53 A
141 W
219 ns
60 ns
VS-CPV364M4FPBF
Vishay Intertechnology
VS-CPV364M4FPBF by Vishay Intertechnology is an N-CHANNEL IGBT with 600V VCEsat, 27A IC, and 63W power dissipation. Ideal for POWER CONTROL applications, it features a complex configuration, 240ns fall time, and -40 to 150°C operating temperature range.
27 A
6 V
R-PSFM-T13
63 W
570 ns
380 ns
1.5 V
NGTB40N65IHRWG
NGTB40N65IHRWG by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.7V and a max IC of 80A, ideal for power control applications. It has a package style of FLANGE MOUNT, can handle up to 650V and dissipate 405W, making it suitable for high-power operations in various industries.
TO-247AD
A1P25S12M3-F
A1P25S12M3-F by STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 2.45V, 197W power dissipation, and operates b/w -40 °C to 150 °C. Ideal for high-efficiency switching in industrial systems.
A1P35S12M3-F
A1P35S12M3-F by STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 2.45V, supports up to 250W power dissipation, and operates b/w -40 °C to 150 °C. Ideal for high-efficiency switching in industrial systems.
STGWA30H65DFB
STGWA30H65DFB from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2V, supports up to 60A collector current, and operates in temperatures from -55 °C to 175 °C. Ideal for high-performance applications, it ensures reliable operation with built-in diode support.
62.8 ns
AIGW40N65H5XKSA1
AIGW40N65H5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT for POWER CONTROL applications. It has a max VCEsat of 2.1V, collector-emitter voltage of 650V, and collector current of 74A. With a turn-off time of 203ns and power dissipation of 250W, it operates in temperatures ranging from -40 to 175°C.
74 A
203 ns
31 ns
AIKQ100N60CTXKSA1
AIKQ100N60CTXKSA1 by Infineon is an N-CHANNEL IGBT with a VCEsat of 2V and IC of 160A. Ideal for power control applications, it has a toff of 393ns and ton of 83ns. With a max operating temperature of 175°C, it's designed for high-power dissipation up to 714W in automotive environments.
160 A
714 W
393 ns
83 ns
AIKQ120N60CTXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 833 W; Maximum Collector Current (IC): 160 A; Nominal Turn On Time (ton): 84 ns;
833 W
84 ns
AIKW20N60CTXKSA1
Infineon's AIKW20N60CTXKSA1 is an N-CHANNEL IGBT with 600V VCEsat, 40A IC, and 2.05V VCE. Ideal for power control applications, it features a built-in diode and operates b/w -40 to 175°C.
AIKW30N60CTXKSA1
Infineon's AIKW30N60CTXKSA1 is an N-CHANNEL IGBT with VCEsat of 2.05V and IC of 60A, ideal for POWER CONTROL applications. It has a toff of 388ns, ton of 50ns, and can handle up to 187W power dissipation. Suitable for FLANGE MOUNT installations with a max temp rating of 175°C.
187 W
388 ns
AIKW50N60CTXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 333 W; Maximum Collector Current (IC): 80 A; Terminal Form: THROUGH-HOLE;
396 ns
AIKW50N65DF5XKSA1
Infineon's AIKW50N65DF5XKSA1 is an N-CHANNEL IGBT with 650V VCEsat, 80A IC, and 270W power dissipation. Ideal for power control applications, it features a built-in diode, 196ns turn-off time, and operates b/w -40 to 175°C.
AIKW50N65DH5XKSA1
Infineon's AIKW50N65DH5XKSA1 is an N-CHANNEL IGBT with 650V VCE, 80A IC, and 2.1V VCEsat. Ideal for POWER CONTROL applications, it features a built-in diode, 196ns toff, and 35ns ton for efficient switching in high-power systems. AEC-Q101 certified for automotive use.
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