Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Add filters
All
Selected
FGHL50T65MQD
Onsemi
FGHL50T65MQD by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.8V and a max collector-emitter voltage of 650V. It is designed for power control applications, offering a max operating temperature of 175 °C and a max collector current of 80A.
COLLECTOR
80 A
650 V
SINGLE WITH BUILT-IN DIODE
6 V
20 V
TO-247
R-PSFM-T3
e3
1
3
175 Cel
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
N-CHANNEL
268 W
NO
Matte Tin (Sn) - annealed
THROUGH-HOLE
SINGLE
POWER CONTROL
SILICON
1.8 V
FGHL75T65MQD
FGHL75T65MQD by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.8V and a max collector-emitter voltage of 650V. It is designed for power control applications, offering a nominal turn off time of 280ns and a max operating temperature of 175°C.
RC-IGBT
375 W
280 ns
92 ns
NXH40T120L3Q1PG
Onsemi's NXH40T120L3Q1PG is an N-CHANNEL IGBT with 1200V VCEsat, 2.2V, and 42A IC. Ideal for POWER CONTROL applications due to its 146W power dissipation, -40 to 150 °C operating temp range, and fast switching times of 83ns turn on and 305ns turn off.
ISOLATED
42 A
1200 V
COMPLEX
6.5 V
R-XUFM-X44
12
44
150 Cel
-40 Cel
UNSPECIFIED
NOT SPECIFIED
146 W
UPPER
305 ns
83 ns
2.2 V
NXH40T120L3Q1SG
NXH40T120L3Q1SG by Onsemi is an N-CHANNEL IGBT with 1200V VCEsat, 305ns toff, and 146W power dissipation. Ideal for POWER CONTROL applications, it features a max operating temperature of 150 °C and 42A IC.
NVH820S75L4SPB
NVH820S75L4SPB by Onsemi is an N-CHANNEL IGBT with 3 BANKS, SERIES CONNECTED configuration. It has a Max VCEsat of 1.55V and can handle a Max Collector Current of 820A. Ideal for POWER CONTROL applications due to its high power dissipation capability and fast turn-off time of 1354ns.
820 A
750 V
3 BANKS, SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR
6.6 V
R-XUFM-X33
6
33
1000 W
1354 ns
454 ns
1.55 V
GT15J341,S4X
Toshiba
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 15 A; No. of Elements: 1;
15 A
600 V
25 V
TO-220AB
30 W
320 ns
180 ns
2 V
GT30J341,Q
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 230 W; Maximum Collector Current (IC): 59 A; Maximum Gate-Emitter Voltage: 25 V;
59 A
230 W
400 ns
250 ns
GT50J341,Q
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 50 A; Maximum Collector-Emitter Voltage: 600 V;
50 A
350 ns
200 W
450 ns
270 ns
FGY75T95LQDT
FGY75T95LQDT by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.69V and a max IC of 150A. Ideal for power control applications, it has a package style of FLANGE MOUNT and can operate b/w -55 to 175 °C temperature range.
FAST SWITCHING
150 A
950 V
6.4 V
453 W
666 ns
102 ns
1.69 V
FGY75T95SQDT
FGY75T95SQDT by Onsemi is an N-CHANNEL IGBT with VCEsat of 2.11V, IC of 150A, and Pd of 434W. Ideal for POWER CONTROL applications due to its high voltage rating (VCEmax: 950V) and fast switching times (ton: 89.6ns, toff: 198.8ns). Package style is FLANGE MOUNT with PLASTIC/EPOXY body material.
434 W
198.8 ns
89.6 ns
2.11 V
DF1000R17IE4PBPSA1
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 1000 A; Peak Reflow Temperature (C): NOT SPECIFIED; No. of Elements: 1;
1000 A
1700 V
SINGLE WITH BUILT-IN DIODE AND THERMISTOR
R-PUFM-X12
1890 ns
720 ns
2.45 V
DF100R07W1H5FPB54BPSA2
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 40 A; Maximum VCEsat: 1.55 V; Terminal Position: UPPER;
40 A
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
4.75 V
R-XUFM-X14
2
14
IEC-61140
30 ns
12.6 ns
DF80R07W1H5FPB11BPSA1
DF80R07W1H5FPB11BPSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 elements, built-in diode, and thermistor. Ideal for power control applications with a max VCEsat of 1.72V and collector-emitter voltage of 650V. Features fast turn-off time (124ns) and operates b/w -40 to 150°C.
20 A
R-XUFM-X18
18
124 ns
17 ns
1.72 V
F3L200R12N2H3B47BPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 150 A; Package Style (Meter): FLANGE MOUNT; Maximum Operating Temperature: 150 Cel;
6.35 V
R-XUFM-X23
4
23
520 ns
253 ns
2.15 V
FF1500R17IP5PBPSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 1500 A; Nominal Turn Off Time (toff): 970 ns; Terminal Form: UNSPECIFIED;
1500 A
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
6.25 V
R-PUFM-X14
970 ns
480 ns
FF400R12KT4PBOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 2; Terminal Position: UPPER; Minimum Operating Temperature: -40 Cel;
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
R-XUFM-X7
7
640 ns
205 ns
2.05 V
FF450R33T3E3B5BPSA1
FF450R33T3E3B5BPSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max VCEsat of 2.75V and can handle a Max Collector Current of 450A. Ideal for POWER CONTROL applications, this IGBT operates b/w -40 to 150°C, with a Max Collector-Emitter Voltage of 3300V.
450 A
3300 V
R-PUFM-X10
10
2190 ns
710 ns
2.75 V
FF450R33T3E3BPSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 450 A; Package Shape: RECTANGULAR; Maximum VCEsat: 2.75 V;
FP10R12W1T7B11BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 10 A; Terminal Form: UNSPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
10 A
6.45 V
1005 ns
45 ns
FP25R12W1T7B11BPSA1
Infineon Technologies' FP25R12W1T7B11BPSA1 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 25A max collector current, and 730ns nominal turn off time. Ideal for power control applications due to its complex configuration and silicon transistor element material.
25 A
730 ns
65 ns
FS100R12N2T4BPSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; No. of Terminals: 25; Minimum Operating Temperature: -40 Cel; Maximum Collector-Emitter Voltage: 1200 V;
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
R-XUFM-X25
25
490 ns
185 ns
2.1 V
FS100R12W2T7B11BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 70 A; Peak Reflow Temperature (C): NOT SPECIFIED; Nominal Turn On Time (ton): 221 ns;
70 A
655 ns
221 ns
FS400R07A1E3BOMA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 1250 W; Maximum Collector Current (IC): 500 A; No. of Terminals: 23;
500 A
1250 W
580 ns
200 ns
1.9 V
HGTP7N60A4-F102
HGTP7N60A4-F102 by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 2.7V and a max IC of 34A. It is designed for power control applications, featuring a package style of FLANGE MOUNT and operating temperatures ranging from -55 to 150 °C.
LOW CONDUCTION LOSS
34 A
85 ns
7 V
125 W
235 ns
2.7 V
IHW40N135R5XKSA1
IHW40N135R5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1350V VCEsat and 80A IC, ideal for POWER CONTROL applications. Featuring a built-in diode, it has a max power dissipation of 394W and operates in temperatures ranging from -40 to 175°C. This RECTANGULAR transistor with THROUGH-HOLE terminals offers fast turn-off time of 700ns.
1350 V
394 W
TIN
700 ns
1.95 V
IKY75N120CS6XKSA1
IKY75N120CS6XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1200V VCEsat, 150A IC, and 880W power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time of 331ns and built-in diode configuration. Operates b/w -40°C to 175°C temperature range.
6.3 V
R-PSIP-T4
IN-LINE
880 W
331 ns
64 ns
2PS06017E32G28213NOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Terminal Form: UNSPECIFIED; Case Connection: ISOLATED; Transistor Element Material: SILICON;
R-XXMA-X
MICROELECTRONIC ASSEMBLY
2PS13512E43W35222NOSA1
2PS13512E43W35222NOSA1 by Infineon is an N-CHANNEL IGBT with 6 elements, suitable for POWER CONTROL applications. It has a max operating temperature of 55°C and min of -25°C, housed in a RECTANGULAR MICROELECTRONIC ASSEMBLY package. The transistor's SILICON material and ISOLATED case connection enhance its performance.
55 Cel
-25 Cel
2PS18012E44G38553NOSA1
2PS18012E44G38553NOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max voltage of 1200V and operating temperature of 150°C. It is designed for POWER CONTROL applications, featuring a COMPLEX configuration in a RECTANGULAR package style suitable for MICROELECTRONIC ASSEMBLY.
8
2PS18012E44G40113NOSA1
2PS18012E44G40113NOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1200V max collector-emitter voltage. Ideal for power control applications, it operates b/w -25°C to 60°C. Featuring a complex configuration and isolated case connection, this microelectronic assembly contains 8 elements made of silicon.
60 Cel
6MS10017E41W36460BOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Terminal Position: UNSPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Transistor Element Material: SILICON;
6MS24017P43W39872NOSA1
Infineon's 6MS24017P43W39872NOSA1 is an N-CHANNEL IGBT with 12 elements, max voltage of 1700V, and temp range -25 to 55 °C. Ideal for POWER CONTROL applications due to SILICON material and ISOLATED case connection in a RECTANGULAR package style.
6MS24017P43W39873NOSA1
Infineon Technologies' 6MS24017P43W39873NOSA1 is an N-CHANNEL IGBT with 12 elements, ideal for POWER CONTROL applications. With a max voltage of 1700V and operating temperature range from -25 to 55 °C, this SILICON-based transistor in RECTANGULAR package offers efficient performance in complex configurations.
6MS30017E43W34404NOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Peak Reflow Temperature (C): NOT SPECIFIED; No. of Elements: 18; Maximum Operating Temperature: 150 Cel;
6MS30017E43W40372NOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Terminal Position: UNSPECIFIED; Terminal Form: UNSPECIFIED;
FS820R08A6P2BBPSA1
Infineon's FS820R08A6P2BBPSA1 is an N-CHANNEL IGBT with 3 BANKS, SERIES CONNECTED, CENTER TAP configuration. It has 6 elements, 820 A IC, and 714 W power dissipation for POWER CONTROL applications. With VCEsat of 1.35V and toff of 1110ns, it operates b/w -40 to 150 °C effectively.
3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
714 W
1110 ns
380 ns
1.35 V
AFGHL50T65SQ
AFGHL50T65SQ by Onsemi is an N-CHANNEL IGBT transistor with 650V VCEsat and 80A IC, ideal for POWER CONTROL applications. It has a max power dissipation of 268W, operating temperature range of -55 to 175 °C, and meets AEC-Q101 standard.
AEC-Q101
RGS60TS65DHRC11
ROHM
ROHM RGS60TS65DHRC11 is an N-CHANNEL IGBT with 650V VCEsat, 56A IC, and 223W power dissipation. Ideal for power control applications due to its fast turn-off time of 290ns and built-in diode. AEC-Q101 certified for automotive use in harsh environments.
56 A
30 V
223 W
290 ns
46 ns
FGHL50T65SQDT
FGHL50T65SQDT by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2.1V and a max IC of 100A. Ideal for power control applications, it has a package style of FLANGE MOUNT and can operate b/w -55 to 175 °C temperature range.
100 A
159 ns
40.4 ns
FGAF40S65AQ
FGAF40S65AQ by Onsemi is an N-CHANNEL IGBT with 650V VCEsat, 80A IC, and 94W power dissipation. Ideal for general purpose switching applications, it features a built-in diode, 30.3ns turn on time, and -55 to 175°C operating temperature range.
94 W
GENERAL PURPOSE SWITCHING
90.8 ns
30.3 ns
NXH160T120L2Q1SG
NXH160T120L2Q1SG by Onsemi is an N-CHANNEL IGBT with 4 elements, VCEsat of 2.5V, and max power dissipation of 280W. Ideal for power control applications, it has a max VCE of 1200V and max IC of 140A. Operating temp ranges from -40 to 150 °C making it suitable for various industrial uses.
140 A
BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE, SINGLE PHASE DIODE BRIDGE AND THERMISTOR
6.9 V
R-XUFM-X30
30
280 W
2.5 V
DGTD65T50S1PT
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 375 W; Maximum Collector Current (IC): 100 A; Maximum Operating Temperature: 175 Cel;
6.2 V
260
MATTE TIN
399 ns
117 ns
2.4 V
DGTD65T60S2PT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 428 W; Maximum Collector Current (IC): 100 A; Maximum Gate-Emitter Voltage: 20 V;
HIGH SPEED SWITCHING
428 W
187 ns
FGH60T65SQD-F155
FGH60T65SQD-F155 by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2.1V and IC of 120A, ideal for POWER CONTROL applications. Featuring a package style of FLANGE MOUNT, it has a max operating temperature of 175°C and collector-emitter voltage of 650V.
120 A
TO-247AB
333 W
126.2 ns
36.8 ns
FGH40T120SQDNL4
FGH40T120SQDNL4 by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.95V and a max collector-emitter voltage of 1200V. Ideal for power control applications, it has a nominal turn off time of 372ns and can handle a max collector current of 160A.
160 A
R-PSFM-T4
454 W
372 ns
80 ns
SNXH100M95H3Q2F2PG
SNXH100M95H3Q2F2PG by Onsemi is an N-CHANNEL IGBT with 950V VCEsat, 263A IC, and 457W power dissipation. Ideal for power control applications due to its series connected configuration with built-in diode and thermistor. Offers fast switching with rise time of 77ns and fall time of 264ns.
263 A
SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR
264 ns
5.7 V
R-XUFM-X40
40
457 W
77 ns
1665 ns
306 ns
2.25 V
FPF2G75FH07BP
FPF2G75FH07BP by Onsemi is an N-CHANNEL IGBT with 6 elements, VCEsat of 2.2V, and IC of 75A. Ideal for POWER CONTROL applications, it has a toff of 462ns and ton of 124ns. Operating b/w -40 °C to 150°C, it offers a max VCE of 650V and Pabs of 236W in a RECTANGULAR package style.
75 A
6.8 V
R-XUFM-X32
32
236 W
462 ns
DGTD120T40S1PT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 357 W; Maximum Collector Current (IC): 80 A; JEDEC-95 Code: TO-247;
357 W
387 ns
132 ns
© 2023 All rights reserved
