Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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FP35R12KT4PBPSA1
Infineon Technologies
FP35R12KT4PBPSA1 by Infineon Technologies is an N-CHANNEL IGBT with 7 elements, max. collector-emitter voltage of 1200V, and nominal turn-off time of 620ns. It is used in applications requiring high power switching such as industrial motor drives and renewable energy systems due to its complex configuration and silicon transistor element material.
ISOLATED
1200 V
COMPLEX
R-XUFM-X23
7
23
150 Cel
UNSPECIFIED
RECTANGULAR
FLANGE MOUNT
NOT SPECIFIED
N-CHANNEL
NO
UPPER
SILICON
620 ns
210 ns
FP50R12KT4PBPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; No. of Elements: 7; Maximum Collector-Emitter Voltage: 1200 V; Peak Reflow Temperature (C): NOT SPECIFIED;
FP75R12KT4PBPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; No. of Elements: 7; Maximum Collector-Emitter Voltage: 1200 V; Terminal Form: UNSPECIFIED;
R-XUFM-X35
35
FZ400R12KS4PHOSA1
FZ400R12KS4PHOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max voltage of 1200V and current of 510A. It has a turn-off time of 590ns and turn-on time of 180ns, making it suitable for high-power applications like motor drives and renewable energy systems. The package style is flange mount with isolated case connection.
510 A
SINGLE WITH BUILT-IN DIODE
R-XUFM-X5
1
5
590 ns
180 ns
F4100R06KL4BOSA1
N-CHANNEL; Configuration: 2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 130 A; No. of Elements: 4; Package Body Material: UNSPECIFIED;
130 A
600 V
2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
R-XUFM-X24
4
24
36 ns
F4200R06KL4BOSA1
N-CHANNEL; Configuration: 2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 225 A; Package Shape: RECTANGULAR; JESD-30 Code: R-XUFM-X26;
225 A
R-XUFM-X26
26
330 ns
230 ns
FP10R12YT3B4BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 16 A; Terminal Form: UNSPECIFIED; Nominal Turn On Time (ton): 70 ns;
16 A
540 ns
70 ns
FS15R06XL4BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 20 A; Terminal Position: UPPER; Case Connection: ISOLATED;
20 A
R-XUFM-X16
6
16
135 ns
29 ns
DDB6U180N16RRB11BPSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE; Surface Mount: NO; Maximum Collector Current (IC): 140 A; JESD-30 Code: R-XUFM-X26; Terminal Position: UPPER;
140 A
SINGLE WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE
-40 Cel
UL RECOGNIZED
POWER CONTROL
DF900R12IP4DVBOSA1
DF900R12IP4DVBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1200V max collector-emitter voltage. It features a built-in diode, thermistor, and UL approval. Ideal for applications requiring high power switching with -40°C min operating temp and 1300ns turn-off time.
SINGLE WITH BUILT-IN DIODE AND THERMISTOR
R-PUFM-X10
10
PLASTIC/EPOXY
UL APPROVED
GENERAL PURPOSE
1300 ns
370 ns
FS450R17OE4PBOSA1
N-CHANNEL; Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; No. of Elements: 6; Peak Reflow Temperature (C): NOT SPECIFIED; Case Connection: ISOLATED;
1700 V
3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
R-XUFM-X29
29
1100 ns
310 ns
FS500R17OE4DBOSA1
N-CHANNEL; Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 740 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Nominal Turn On Time (ton): 330 ns;
740 A
1080 ns
FS75R12KE3B9BOSA1
FS75R12KE3B9BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 6 elements in a BRIDGE configuration. It has a max voltage of 1200V, max current of 105A, and turn-off time of 610ns. Ideal for high-power applications requiring fast switching such as motor drives and power supplies.
105 A
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
175 Cel
610 ns
340 ns
DDB6U134N16RRB11BPSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 70 A; Package Body Material: UNSPECIFIED; Terminal Position: UPPER;
70 A
SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR
R-XUFM-X19
19
F3L300R12MT4PB22BPSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 450 A; Package Shape: RECTANGULAR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
450 A
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
R-XUFM-X11
2
11
600 ns
270 ns
F3L300R12MT4PB23BPSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 450 A; Case Connection: ISOLATED; Transistor Application: POWER CONTROL;
280 ns
FD200R12KE3PHOSA1
Infineon's FD200R12KE3PHOSA1 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage. It has a single configuration with built-in diode, ideal for power control applications. Featuring 830ns turn off time and 400ns turn on time, this UL recognized transistor operates from -40°C and comes in a flange mount package style.
830 ns
400 ns
FD800R45KL3KB5NPSA1
N-CHANNEL; Configuration: COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Peak Reflow Temperature (C): NOT SPECIFIED; Transistor Application: POWER CONTROL; Nominal Turn Off Time (toff): 7350 ns;
4500 V
COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE
R-PUFM-X9
9
-50 Cel
7350 ns
1050 ns
FD900R12IP4DVBOSA1
Infineon's FD900R12IP4DVBOSA1 IGBT features 1200V max collector-emitter voltage, 1300ns turn-off time, and 370ns turn-on time. Ideal for applications requiring N-channel single configuration with built-in diode and thermistor. Suitable for UL-recognized systems needing isolated case connection in -40°C operating conditions.
FF1200R12IE5PBPSA1
FF1200R12IE5PBPSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max Vce of 1200V, toff of 680ns, and ton of 430ns. Ideal for power control applications due to its isolated case connection and flange mount package style.
680 ns
430 ns
FF225R12ME4PB11BPSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Terminal Position: UPPER; Package Style (Meter): FLANGE MOUNT; No. of Elements: 2;
6.4 V
20 V
220 ns
2.15 V
FF225R17ME4PB11BPSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 340 A; Case Connection: ISOLATED; Maximum Collector-Emitter Voltage: 1700 V;
340 A
1500 ns
350 ns
FF300R12ME4PB11BPSA1
FF300R12ME4PB11BPSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max VCEsat of 2.1V and Nominal Turn Off Time of 720ns, making it ideal for POWER CONTROL applications. With a Max Collector-Emitter Voltage of 1200V and operating temperature range from -40 to 150 °C, this RECTANGULAR package transistor offers efficient performance in various power control systems.
720 ns
240 ns
2.1 V
FF300R17ME4PB11BPSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Peak Reflow Temperature (C): NOT SPECIFIED; Transistor Application: POWER CONTROL; Maximum Collector-Emitter Voltage: 1700 V;
1520 ns
405 ns
2.3 V
FF450R12ME4EB11BPSA1
FF450R12ME4EB11BPSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a 740 ns turn off time, and 1200V max collector-emitter voltage. It is used in applications requiring high power switching such as industrial motor drives and renewable energy systems.
675 A
740 ns
290 ns
FF450R12ME4PB11BOSA1
FF450R12ME4PB11BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a built-in diode, and thermistor. It has a max voltage of 1200V, max current of 675A, and turn-off time of 740ns. Ideal for applications requiring high power switching in industrial settings due to its robust design and fast switching capabilities.
FF450R17ME4PB11BOSA1
Infineon Technologies' FF450R17ME4PB11BOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. Ideal for POWER CONTROL applications, it has a max voltage of 1700V, current of 600A, and turn-off time of 1600ns. With a package style of FLANGE MOUNT and operating temp up to 175°C, it offers efficient performance in various power control systems.
600 A
1600 ns
380 ns
FF600R12ME4B72BOSA1
FF600R12ME4B72BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max voltage of 1200V and current of 995A, making it ideal for POWER CONTROL applications. With a turn off time of 770ns and turn on time of 310ns, this rectangular package transistor operates at temperatures up to 175°C.
995 A
R-XUFM-X7
770 ns
FF600R12ME4B73BPSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 995 A; Transistor Element Material: SILICON; Transistor Application: POWER CONTROL;
FF600R12ME4PB11BOSA1
Infineon's FF600R12ME4PB11BOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, featuring VCEsat of 2.1V and toff of 770ns. Ideal for POWER CONTROL applications, it operates up to 1200V at temperatures from -40°C to 150°C.
FF600R17ME4PB11BOSA1
Infineon Technologies' FF600R17ME4PB11BOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max voltage of 1700V and max current of 950A for POWER CONTROL applications. Featuring a toff of 980ns and ton of 320ns, this rectangular package transistor is ideal for high-power systems.
950 A
980 ns
320 ns
FP10R12W1T4PB11BPSA1
Infineon's FP10R12W1T4PB11BPSA1 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 20A max collector current, and 500ns nominal turn off time. Ideal for power control applications due to its complex configuration and silicon transistor element material.
500 ns
108 ns
FP15R12W1T4PB11BPSA1
Infineon's FP15R12W1T4PB11BPSA1 is an N-CHANNEL IGBT with 1200V VCEsat, 510ns toff, and 130ns ton. Ideal for POWER CONTROL applications due to its complex configuration and SILICON material. Operating temperature ranges from -40°C to 150°C making it suitable for various industrial uses.
510 ns
130 ns
2.25 V
FP25R12W2T4PB11BPSA1
Infineon's FP25R12W2T4PB11BPSA1 is an N-CHANNEL IGBT with 7 elements, max. collector current of 39A, and max. collector-emitter voltage of 1200V. Ideal for power control applications due to its complex configuration, fast turn-on time (47ns), and isolated case connection for high-power operations at up to 175°C.
39 A
520 ns
47 ns
FP35R12W2T4PB11BPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 54 A; Terminal Form: UNSPECIFIED; Maximum Operating Temperature: 150 Cel;
54 A
43 ns
FP75R12KT4PB11BPSA1
Infineon Technologies' FP75R12KT4PB11BPSA1 is an N-CHANNEL IGBT with 7 elements, max voltage of 1200V, and turn off time of 620ns. It's used in applications requiring high power switching like motor drives and renewable energy systems due to its complex configuration and silicon material.
FP75R17N3E4BPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 125 A; Package Style (Meter): FLANGE MOUNT; Transistor Application: POWER CONTROL;
125 A
800 ns
305 ns
FS50R12KT4PB11BPSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Terminal Position: UPPER; Minimum Operating Temperature: -40 Cel; JESD-30 Code: R-XUFM-X25;
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
R-XUFM-X25
25
490 ns
185 ns
FZ1200R12HE4PHPSA1
FZ1200R12HE4PHPSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1200V VCEsat, 1825A IC, and 660ns ton. It is used for POWER CONTROL applications requiring high current handling and fast switching capabilities in a FLANGE MOUNT package style.
1825 A
R-PUFM-X7
1130 ns
660 ns
FZ2400R12HE4PB9HPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Nominal Turn On Time (ton): 880 ns; Minimum Operating Temperature: -40 Cel; Transistor Application: POWER CONTROL;
3
1320 ns
880 ns
F3L300R07PE4PBOSA1
F3L300R07PE4PBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 4 elements, featuring a max. collector-emitter voltage of 650V. It has a nominal turn-off time of 600ns and turn-on time of 190ns, ideal for power control applications. The transistor's complex configuration and isolated case connection make it suitable for high-power systems requiring precise switching capabilities.
650 V
R-XUFM-X20
20
190 ns
FS200R12PT4PBOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 280 A; Transistor Element Material: SILICON; Case Connection: ISOLATED;
280 A
IGW50N60TPXKSA1
IGW50N60TPXKSA1 by Infineon is an N-CHANNEL IGBT with a max voltage of 600V and max current of 100A. It has a turn-off time of 396ns and turn-on time of 60ns, ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals, suitable for flange mount installations at temperatures up to 175°C.
FAST SWITCHING
COLLECTOR
100 A
SINGLE
TO-247AC
R-PSFM-T3
e3
TIN
THROUGH-HOLE
396 ns
60 ns
F3L100R12W2H3B11BPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; No. of Terminals: 32; Peak Reflow Temperature (C): NOT SPECIFIED; JESD-30 Code: R-XUFM-X32;
R-XUFM-X32
32
465 ns
175 ns
F3L150R12W2H3B11BPSA1
F3L150R12W2H3B11BPSA1 by Infineon Technologies is an N-CHANNEL IGBT with 4 elements, 1200V max collector-emitter voltage, and 510ns turn-off time. It is used in applications requiring high power switching such as industrial motor drives and renewable energy systems.
F3L200R12W2H3B11BPSA1
F3L200R12W2H3B11BPSA1 by Infineon is an N-CHANNEL IGBT with 1200V max collector-emitter voltage. It has 4 elements, 32 terminals, and a complex configuration for power control applications. Featuring a turn-off time of 480ns and turn-on time of 190ns, it is UL approved and operates from -40°C.
480 ns
F475R07W2H3B51BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Terminal Form: UNSPECIFIED; No. of Terminals: 28;
75 A
R-XUFM-X28
28
300 ns
45 ns
IKW40N60DTPXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 67 A; No. of Terminals: 3; Terminal Finish: TIN;
67 A
TO-247
49 ns
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