Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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F3L225R07W2H3PB63BPSA1
Infineon Technologies
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Nominal Turn Off Time (toff): 110 ns; Transistor Application: POWER CONTROL; Case Connection: ISOLATED;
ISOLATED
650 V
COMPLEX
6.45 V
20 V
R-XUFM-X32
4
32
150 Cel
-40 Cel
UNSPECIFIED
RECTANGULAR
FLANGE MOUNT
NOT SPECIFIED
N-CHANNEL
NO
UPPER
POWER CONTROL
SILICON
110 ns
170 ns
1.65 V
F3L25R12W1T4B27BOMA1
Infineon's F3L25R12W1T4B27BOMA1 IGBT features 1200V VCEsat, 375ns toff, and 215W power dissipation. Ideal for power control applications with N-CHANNEL polarity, it offers fast switching and high current handling capabilities in a complex configuration.
45 A
1200 V
6.5 V
R-XUFM-X19
19
215 W
UL APPROVED
375 ns
54 ns
2.25 V
F4200R17N3E4BPSA1
N-CHANNEL; Configuration: BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Terminal Position: UPPER; Maximum Operating Temperature: 150 Cel; Maximum Collector-Emitter Voltage: 1700 V;
1700 V
BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
6.25 V
R-XUFM-X30
30
1160 ns
270 ns
2.3 V
F575R06KE3B5BOSA1
N-Channel; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum VCEsat: 1.9 V; Package Body Material: UNSPECIFIED;
600 V
R-XUFM-X35
2
35
N-Channel
250 W
45 ns
1.9 V
FF1500R12IE5BPSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Operating Temperature: 175 Cel; Maximum Collector-Emitter Voltage: 1200 V;
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
6.35 V
R-PUFM-X14
14
175 Cel
PLASTIC/EPOXY
720 ns
460 ns
2.15 V
FF1500R17IP5BPSA1
FF1500R17IP5BPSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max VCEsat of 2.2V and can operate at temperatures up to 175°C. Ideal for power control applications due to its high collector-emitter voltage of 1700V and fast turn-off time of 970ns.
970 ns
480 ns
2.2 V
CM225DX-24T
Mitsubishi Electric
Mitsubishi Electric's CM225DX-24T is a N-CHANNEL IGBT with 2 elements, built-in diode, and thermistor. It has a max VCEsat of 2V and can handle up to 225A IC for power control applications. With a package style of FLANGE MOUNT, it operates b/w -40 to 150 °C with UL recognition.
225 A
400 ns
6.6 V
R-PUFM-X11
11
1470 W
UL RECOGNIZED
200 ns
1200 ns
800 ns
2 V
A2P75S12M3-F
STMicroelectronics
A2P75S12M3-F by STMicroelectronics is an N-CHANNEL IGBT with a max VCEsat of 2.3V and a max collector current (IC) of 75A. It is commonly used for power control applications due to its high power dissipation capability and wide operating temperature range (-40°C to 150°C).
75 A
7 V
R-XUFM-X33
6
33
454.4 W
517 ns
235 ns
A2P75S12M3
A2P75S12M3 by STMicroelectronics is an N-channel IGBT designed for motor control applications. It features a max VCEsat of 2.3V, supports up to 75A collector current, and operates at temperatures from -40 °C to 150 °C. Its bridge configuration with 6 elements ensures efficient performance.
BRIDGE, 6 ELEMENTS
454.5 W
MOTOR CONTROL
FS400R07A1E3S7BOMA1
Infineon FS400R07A1E3S7BOMA1 is a N-CHANNEL IGBT with 6 elements in bridge configuration. Ideal for power control applications, it has VCEsat of 1.7V, IC of 500A, and Pmax of 1250W. Operates b/w -40 to 150°C with ton at 220ns and toff at 540ns.
500 A
705 V
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
R-XUFM-X25
1
25
1250 W
540 ns
220 ns
1.7 V
FS400R07A3E3BOMA1
FS400R07A3E3BOMA1 by Infineon is an N-CHANNEL IGBT with 6 elements in a bridge configuration. It has a max VCEsat of 1.7V and can handle up to 500A of collector current. Ideal for power control applications, it offers fast turn-off time (430ns) and high power dissipation (1250W).
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND NTC
R-XUFM-X29
29
430 ns
AIGW40N65F5XKSA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 74 A; Terminal Finish: TIN;
COLLECTOR
74 A
SINGLE
4.8 V
TO-247
R-PSFM-T3
e3
3
AEC-Q101
TIN
THROUGH-HOLE
30 ns
2.1 V
AIKW40N65DF5XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 74 A; Transistor Application: POWER CONTROL;
SINGLE WITH BUILT-IN DIODE
IKFW50N60DH3XKSA1
IKFW50N60DH3XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with VCEsat of 2.3V, IC of 53A, and Pmax of 145W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 268ns and high operating temperature range (-40 to 175°C). Package style: FLANGE MOUNT, Terminal finish: TIN, Case connection: ISOLATED.
53 A
5.7 V
145 W
268 ns
58 ns
IKFW60N60EH3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 164 W; Maximum Collector Current (IC): 64 A; Transistor Application: POWER CONTROL;
64 A
164 W
282 ns
63 ns
IKFW90N60EH3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 178 W; Maximum Collector Current (IC): 77 A; Nominal Turn On Time (ton): 76 ns;
77 A
178 W
312 ns
76 ns
STGP8M120DF3
STGP8M120DF3 from STMicroelectronics is an N-channel IGBT ideal for power control applications. It features a max VCEsat of 2.3V, operates up to 175 °C, and supports 1200V with a collector current of 16A. Its compact design ensures efficient thermal management in various systems.
16 A
TO-220AB
-55 Cel
356 ns
28.8 ns
VS-GT100DA120UF
Vishay Intertechnology
VS-GT100DA120UF by Vishay Intertechnology is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 187A max collector current. Ideal for power control applications, it features a single configuration with built-in diode, 490ns turn off time, and 208ns turn on time. UL approved and designed in a rectangular package style for flange mount.
187 A
R-PUFM-X4
490 ns
208 ns
VS-GT80DA120U
VS-GT80DA120U by Vishay Intertechnology is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 139A max collector current, and 658W max power dissipation. Ideal for power control applications, it features a single configuration with built-in diode and operates in temperatures ranging from -40°C to 150°C.
139 A
658 W
436 ns
199 ns
NXH80T120L2Q0P2G
Onsemi
NXH80T120L2Q0P2G by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 67A IC, and 158W power dissipation. Ideal for POWER CONTROL applications due to its low 2.85V VCEsat and fast switching times of 88ns turn on and 293ns turn off. Suitable for high-power systems requiring efficient control in a complex configuration.
RC-IGBT
67 A
6.4 V
R-XUFM-X20
20
158 W
293 ns
88 ns
2.85 V
NXH80T120L2Q0S2TG
NXH80T120L2Q0S2TG by Onsemi is an N-CHANNEL IGBT with 1200V VCEsat, 67A IC, and 158W power dissipation. Ideal for POWER CONTROL applications due to its fast ton of 88ns and low toff of 293ns. Package style is FLANGE MOUNT with RECTANGULAR shape and ISOLATED case connection.
DGTD65T40S1PT
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 341 W; Maximum Collector Current (IC): 80 A; Terminal Position: SINGLE;
80 A
6 V
260
341 W
MIL-STD-202
MATTE TIN
285 ns
112 ns
2.4 V
NXH160T120L2Q2F2S1G
NXH160T120L2Q2F2S1G by Onsemi is an N-CHANNEL IGBT with 1200V VCEsat, 181A IC, and 500W power dissipation. Ideal for power control applications due to its fast turn-off time of 435ns and high operating temperature range from -40 °C to 125°C.
181 A
R-XUFM-X56
56
125 Cel
500 W
435 ns
150 ns
2.7 V
RGW60TK65GVC11
ROHM
ROHM RGW60TK65GVC11 is an N-CHANNEL IGBT with 650V max collector-emitter voltage and 33A max collector current. Ideal for power control applications, featuring 209ns turn-off time, 50ns turn-on time, and a plastic/epoxy package body for through-hole mounting.
33 A
209 ns
50 ns
DGTD65T40S2PT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 230 W; Maximum Collector Current (IC): 80 A; Package Style (Meter): FLANGE MOUNT;
230 W
162 ns
48 ns
STGWA40HP65FB2
STGWA40HP65FB2 from STMicroelectronics is an N-channel IGBT ideal for power control applications. It features a max VCEsat of 2V, supports up to 72A collector current, and operates b/w -55 °C to 175 °C. Its robust design ensures efficient performance in demanding environments.
72 A
189 ns
STGWA40IH65DF
STGWA40IH65DF from STMicroelectronics is a robust N-channel IGBT ideal for high-power applications. It features a max VCEsat of 2V, 650V collector-emitter voltage, and handles up to 80A current. Its compact design ensures efficient thermal management in demanding environments.
238 W
263 ns
STGWA40H60DLFB
STGWA40H60DLFB by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2V, IC of 80A, and Ptot of 283W. Ideal for applications requiring high power dissipation in a compact package such as motor drives, inverters, and industrial equipment.
283 W
202 ns
FGHL50T65SQ
The Onsemi FGHL50T65SQ is an N-CHANNEL IGBT transistor with a max VCEsat of 2.1V and IC of 100A, ideal for POWER CONTROL applications. It has a max VCE of 650V, operating temperature range from -55 to 175°C, and comes in a RECTANGULAR package style for FLANGE MOUNT installation.
100 A
268 W
Matte Tin (Sn) - annealed
FGY60T120SQDN
FGY60T120SQDN by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 120A IC, and 517W power dissipation. Ideal for general purpose switching applications due to its fast turn-off time of 468ns. The package style is flange mount with a rectangular shape and through-hole terminals.
HIGH SPEED SWITCHING
120 A
25 V
517 W
GENERAL PURPOSE SWITCHING
468 ns
1.95 V
FGY75T120SQDN
FGY75T120SQDN by Onsemi is an N-CHANNEL IGBT with 1200V VCEsat, 150A IC, and 790W power dissipation. Ideal for power control applications, it features a built-in diode and operates b/w -55 to 175 °C.
150 A
790 W
452 ns
136 ns
NXH35C120L2C2SG
NXH35C120L2C2SG by Onsemi is an N-CHANNEL IGBT with 7 elements, including a brake IGBT and three-phase diode bridge. It has a max VCEsat of 2.4V and can handle up to 35A collector current. Ideal for power control applications, this IGBT operates b/w -40°C to 150°C temperature range.
35 A
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, 1 BRAKE IGBT, THREE PHASE DIODE BRIDGE AND THERMISTOR
6.8 V
R-PDIP-T26
7
26
IN-LINE
DUAL
485 ns
240 ns
NXH80T120L3Q0S3G
NXH80T120L3Q0S3G by Onsemi is an N-CHANNEL IGBT with 4 elements in a bridge configuration. It has a max VCEsat of 2.4V and can handle up to 75A of collector current. Ideal for power control applications, it operates at temperatures ranging from -40 °C to 150°C.
188 W
750 ns
98 ns
RGTVX6TS65DGC11
ROHM RGTVX6TS65DGC11 is an N-CHANNEL IGBT with 650V max collector-emitter voltage, ideal for power control applications. Featuring a single configuration with built-in diode, it has a 144A max collector current and 298ns nominal turn off time. This IGBT operates b/w -40°C to 175°C temperature range.
144 A
298 ns
83 ns
IXYH40N120C4
Littelfuse
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 680 W; Maximum Collector Current (IC): 120 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V;
680 W
2.5 V
STGWA40H65DFB2
STGWA40H65DFB2 by STMicroelectronics is an N-CHANNEL IGBT with 650V VCE, 72A IC, and 230W power dissipation. Ideal for power control applications due to its fast turn-off time of 158ns and built-in diode configuration. Operates b/w -55°C to 175°C temperature range in a rectangular package style.
158 ns
34 ns
NXH240B120H3Q1PG
NXH240B120H3Q1PG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 68A IC, and 158W power dissipation. Ideal for motor control applications due to its fast turn-off time of 337ns. Package style is flange mount with 32 terminals and isolated case connection.
68 A
337 ns
FGHL40S65UQ
FGHL40S65UQ by Onsemi is an N-CHANNEL IGBT with 650V VCEsat, 80A IC, and 1.7V VGE. Ideal for general purpose switching applications, it features a single configuration with built-in diode in a rectangular package suitable for flange mount installations.
231 W
340 ns
STGWA40H65DHFB2
STGWA40H65DHFB2 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2V, supports up to 650V collector-emitter voltage, and has a power dissipation of 230W. Ideal for high-performance switching in industrial systems.
183 ns
24.6 ns
RGS50TSX2DHRC11
ROHM's RGS50TSX2DHRC11 IGBT is a single N-channel transistor with built-in diode, ideal for power control applications. With a max VCEsat of 2.1V and collector current of 50A, it offers efficient performance. Operating at temperatures up to 175°C, this IGBT has a turn-off time of 450ns, making it suitable for high-power applications.
50 A
30 V
395 W
450 ns
53 ns
RGS80TSX2HRC11
ROHM's RGS80TSX2HRC11 is an N-CHANNEL IGBT with 1200V VCE, 80A IC, and 555W power dissipation. Ideal for POWER CONTROL applications, it features a fast turn-off time of 629ns and operates b/w -40°C to 175°C.
555 W
629 ns
89 ns
STGWA30HP65FB
STGWA30HP65FB from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2V, supports up to 60A collector current, and operates in temperatures from -55 °C to 175 °C. Ideal for high-performance switching tasks.
60 A
260 W
223 ns
169 ns
NXH100B120H3Q0PG
N-CHANNEL; Configuration: COMMON COLLECTOR, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 186 W; Maximum Collector Current (IC): 50 A; Maximum Collector-Emitter Voltage: 1200 V;
COMMON COLLECTOR, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
R-XUFM-X22
22
186 W
291 ns
61 ns
IKFW50N65DH5XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 124 W; Maximum Collector Current (IC): 59 A; JEDEC-95 Code: TO-247;
59 A
124 W
177 ns
57 ns
STGWA40HP65FB
STGWA40HP65FB from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2V, supports up to 80A collector current, and operates in temperatures from -55 °C to 175 °C. Its robust design ensures reliable performance in demanding environments.
STGWA60V60DWFAG
STGWA60V60DWFAG from STMicroelectronics is a robust N-channel IGBT designed for power control applications. It features a max VCEsat of 2.3V, supports up to 600V collector-emitter voltage, and operates efficiently at temperatures from -55 °C to 175 °C. Ideal for high-power systems, it ensures reliable performance with a built-in diode.
375 W
280 ns
55 ns
FGAF30S65AQ
FGAF30S65AQ by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 2.1V and a collector-emitter voltage of 650V. Ideal for switching applications, it has a turn-off time of 166ns and can handle a max collector current of 60A.
83 W
SWITCHING
166 ns
FGHL40T65MQD
FGHL40T65MQD by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.8V and a max collector-emitter voltage of 650V. It is designed for power amplifier applications, featuring a single configuration with built-in diode. With a max power dissipation of 238W and operating temperature up to 175°C, it offers reliable performance in various high-power electronic systems.
POWER AMPLIFIER
203 ns
52 ns
1.8 V
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