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FF1200R12IE5PBPSA1

Infineon Technologies

FF1200R12IE5PBPSA1 by Infineon Technologies

FF1200R12IE5PBPSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max Vce of 1200V, toff of 680ns, and ton of 430ns. Ideal for power control applications due to its isolated case connection and flange mount package style.

Median Price

$698.980

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1 parts In-Stock

1+ parts

$689.140

100+ parts

$647.790

1k+ parts

$585.770

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1

$689.140

$647.790

$585.770

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Mouser Electronics

USA . 2 parts In-Stock

1+ parts

$708.820

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2

$708.820

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Distributors (In-Stock)

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Digiode

USA . 155 parts In-Stock

1+ parts

$631.608

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155

$631.608

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Vyrian

USA . 3,219 parts In-Stock

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3,219

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Distributors (Availability)

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Modulus Dynamics

Lithuania . 20,960 parts In-Stock

1+ parts

$1.117

100+ parts

$1.072

1k+ parts

$1.028

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20,960

$1.117

$1.072

$1.028

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Corphita

USA . 913 parts In-Stock

1+ parts

$598.365

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913

$598.365

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Component Stockers USA

USA . 10 parts In-Stock

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$941.410

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10

$941.410

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Continental Prestige Electronics

USA . 1 parts In-Stock

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$946.800

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1

$946.800

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QUARKTWIN TECHNOLOGY LTD

USA . 22,329 parts In-Stock

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22,329

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Northwest PG Solutions

USA . 2,016 parts In-Stock

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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500

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Perfect Parts

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Native Components

USA . 30 parts In-Stock

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30

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Overview

Unleash the power of your electronics with the FF1200R12IE5PBPSA1 from Infineon Technologies, a leading manufacturer known for top-quality Insulated Gate Bipolar Transistors (IGBT). This advanced transistor is designed for power control applications, offering unparalleled performance and reliability. With its N-CHANNEL polarity and unique configuration, this transistor is a game-changer in the industry. Trust in the expertise of Infineon Technologies to deliver cutting-edge technology that maximizes efficiency and enhances overall functionality. Elevate your projects with the FF1200R12IE5PBPSA1 and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package provides good insulation and protection for the internal components, ensuring reliable performance and durability.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically have lower on-resistance and higher efficiency compared to P-channel types, making them suitable for power control applications.

Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

This configuration allows for precise power control and built-in protection features, enhancing the overall reliability and performance of the device.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, this IGBT is optimized for efficient and reliable operation in high-power circuits.

Package Shape: RECTANGULAR

The rectangular shape makes it easy to mount and integrate into existing circuit designs, providing flexibility and convenience during installation.

No. of Elements: 2

Having two elements allows for more complex control schemes and increased flexibility in power management, making it suitable for a wide range of applications.

Nominal Turn Off Time (toff): 680 ns

The fast turn-off time of 680 ns ensures rapid switching and efficient operation, reducing power loss and improving overall performance.

No. of Terminals: 10

With 10 terminals, this IGBT offers versatile connection options and compatibility with different circuit configurations, enhancing its usability in various applications.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides secure and stable mounting, minimizing the risk of damage or disconnection during operation.

Maximum Collector-Emitter Voltage: 1200 V

With a high maximum voltage rating of 1200 V, this IGBT can handle high-power applications and voltage fluctuations with ease, ensuring reliable performance under varying conditions.

Transistor Element Material: SILICON

Silicon-based IGBTs offer high performance and efficiency, making them a preferred choice for power electronic applications where reliability and durability are key considerations.

Terminal Position: UPPER

The upper terminal position simplifies connections and ensures proper alignment with other components in the circuit, facilitating easy installation and maintenance.

Case Connection: ISOLATED

The isolated case connection provides enhanced safety and protection against electrical shorts and current leakage, ensuring reliable operation in high-voltage environments.

Nominal Turn On Time (ton): 430 ns

The fast turn-on time of 430 ns allows for quick and efficient switching between on and off states, improving overall performance and efficiency in power control applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FF1200R12IE5PBPSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

ISOLATED

Maximum Collector-Emitter Voltage:

1200 V

JESD-30 Code:

R-PUFM-X10

No. of Elements:

2

No. of Terminals:

10

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

680 ns

Nominal Turn On Time (ton):

430 ns

Trade Compliance

FF1200R12IE5PBPSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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