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FF1200R17IP5BPSA1

Infineon Technologies

FF1200R17IP5BPSA1 by Infineon Technologies

FF1200R17IP5BPSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max Collector-Emitter Voltage of 1700V and Nominal Turn Off Time of 970ns, ideal for POWER CONTROL applications. The package style is FLANGE MOUNT with PLASTIC/EPOXY body material, suitable for high-power systems requiring fast switching speeds.

Median Price

$676.988

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Rochester

USA . 4 parts In-Stock

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$541.590

100+ parts

$509.090

1k+ parts

$476.600

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$541.590

$509.090

$476.600

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Verical

USA . 4 parts In-Stock

1+ parts

$676.987

100+ parts

$636.362

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$595.750

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4

$676.987

$636.362

$595.750

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DigiKey

USA . 4 parts In-Stock

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$676.990

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$676.990

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Mouser Electronics

USA . 3 parts In-Stock

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$735.760

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$735.760

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Digiode

USA . 492 parts In-Stock

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$627.665

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492

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Vyrian

USA . 4,327 parts In-Stock

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4,327

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Distributors (Availability)

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Modulus Dynamics

Lithuania . 22,858 parts In-Stock

1+ parts

$1.693

100+ parts

$1.625

1k+ parts

$1.558

10k+ parts

-

22,858

$1.693

$1.625

$1.558

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Corphita

USA . 486 parts In-Stock

1+ parts

$594.630

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486

$594.630

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Component Stockers USA

USA . 13 parts In-Stock

1+ parts

$708.990

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13

$708.990

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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Native Components

USA . 439 parts In-Stock

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Northwest PG Solutions

USA . 208 parts In-Stock

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Overview

Unlock the power of efficient power control with the Infineon Technologies FF1200R17IP5BPSA1 Insulated Gate Bipolar Transistor. Manufactured by industry leader Infineon Technologies, this N-channel transistor features a series connected, center tap configuration with built-in diode and thermistor. Ideal for applications requiring high voltage capabilities, this rectangular-shaped transistor offers a maximum collector-emitter voltage of 1700V. With a fast turn-off time of 970 ns and turn-on time of 460 ns, this transistor provides reliable performance for a wide range of power control applications. Experience the quality and reliability of Infineon Technologies with the FF1200R17IP5BPSA1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistors, ensuring durability and reliability.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs generally have lower on-state voltage drop and higher efficiency compared to P-channel types.

Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

This configuration allows for optimized power control and efficient switching in various applications.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, ensuring reliable performance and precise control of power.

Maximum Collector-Emitter Voltage: 1700 V

Suitable for high-voltage applications, providing a wide range of potential uses for the IGBT.

Nominal Turn Off Time (toff): 970 ns

Fast turn-off time helps in reducing switching losses and improving overall efficiency of the power control system.

No. of Terminals: 10

Having 10 terminals allows for easy and flexible connections in various circuit configurations.

Nominal Turn On Time (ton): 460 ns

Fast turn-on time ensures quick response and precise control of power, crucial for power control applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FF1200R17IP5BPSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

ISOLATED

Maximum Collector-Emitter Voltage:

1700 V

JESD-30 Code:

R-PUFM-X10

No. of Elements:

2

No. of Terminals:

10

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

970 ns

Nominal Turn On Time (ton):

460 ns

Trade Compliance

FF1200R17IP5BPSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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