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NO Insulated Gate Bipolar Transistors (IGBT) 1,397

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STGP30NC60K by STMicroelectronics

STGP30NC60K

STMicroelectronics

STGP30NC60K from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, a power dissipation of 185 W, and operates at up to 150 °C. Ideal for high-performance switching in industrial systems.

60 A

600 V

SINGLE

6.5 V

20 V

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

185 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

290 ns

41 ns

STGW19NC60H by STMicroelectronics

STGW19NC60H

STMicroelectronics

STGW19NC60H from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, 140 W power dissipation, and operates at up to 150 °C. Ideal for high-performance switching in industrial systems.

42 A

600 V

SINGLE

5.75 V

20 V

TO-247

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

140 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

272 ns

32 ns

STGF30NC60S by STMicroelectronics

STGF30NC60S

STMicroelectronics

STGF30NC60S from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600V, a turn-off time of 555ns, and can handle up to 22A. Ideal for high-temperature environments with a max operating temp of 150 °C.

ISOLATED

22 A

600 V

SINGLE

5.75 V

20 V

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

40 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

555 ns

30 ns

STGWF30NC60S by STMicroelectronics

STGWF30NC60S

STMicroelectronics

STGWF30NC60S by STMicroelectronics is an N-channel IGBT ideal for power control applications. It features a max VCEsat of 1.9V, supports up to 35A collector current, and operates at temperatures from -55 °C to 150°C. Its robust design ensures efficient performance in demanding environments.

ISOLATED

35 A

600 V

SINGLE

5.75 V

20 V

R-PSFM-T3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

79 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

555 ns

30 ns

1.9 V

STGP18N40LZ by STMicroelectronics

STGP18N40LZ

STMicroelectronics

STGP18N40LZ from STMicroelectronics is an N-channel IGBT designed for automotive ignition applications. It features a max collector-emitter voltage of 420 V, power dissipation of 150 W, and operates at up to 175 °C. Its built-in diode enhances efficiency in demanding environments.

VOLTAGE CLAMPING

COLLECTOR

30 A

420 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

2.3 V

16 V

TO-220AB

R-PSFM-T3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

150 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

AUTOMOTIVE IGNITION

SILICON

22200 ns

4450 ns

STGW38IH130D by STMicroelectronics

STGW38IH130D

STMicroelectronics

STGW38IH130D by STMicroelectronics is an N-CHANNEL IGBT with 1300V VCE, 63A IC, and 250W Ptot. Ideal for power control applications, it features a built-in diode and operates up to 150°C.

63 A

1300 V

SINGLE WITH BUILT-IN DIODE

5.75 V

25 V

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

740 ns

STGWS38IH130D by STMicroelectronics

STGWS38IH130D

STMicroelectronics

STGWS38IH130D from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max collector-emitter voltage of 1300 V, a nominal turn-off time of 740 ns, and can handle up to 180 W dissipation. Ideal for high-temperature applications with a max operating temp of 150 °C.

55 A

1300 V

SINGLE WITH BUILT-IN DIODE

5.75 V

25 V

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

180 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

740 ns

STGW35NC120HD by STMicroelectronics

STGW35NC120HD

STMicroelectronics

STGW35NC120HD from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 1200 V, 60 A collector current, and a turn-off time of just 928 ns. Ideal for high-performance switching in industrial systems.

60 A

1200 V

SINGLE WITH BUILT-IN DIODE

5.75 V

25 V

TO-247

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

220 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

928 ns

41 ns

FF600R12IS4F by Infineon Technologies

FF600R12IS4F

Infineon Technologies

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 3700 W; Maximum Collector Current (IC): 600 A; Maximum Collector-Emitter Voltage: 1200 V;

ISOLATED

600 A

1200 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

20 V

R-XUFM-X7

2

7

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

3700 W

Not Qualified

Insulated Gate BIP Transistors

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

630 ns

270 ns

3.75 V

STGE50NB60HD by STMicroelectronics

STGE50NB60HD

STMicroelectronics

STGE50NB60HD from STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max VCEsat of 2.8V, 600V collector-emitter voltage, and handles up to 100A current. With a compact flange mount design, it operates efficiently at temperatures up to 150 °C.

ISOLATED

100 A

600 V

SINGLE WITH BUILT-IN DIODE

20 V

R-PUFM-X4

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

300 W

Not Qualified

Insulated Gate BIP Transistors

NO

NICKEL

UNSPECIFIED

UPPER

MOTOR CONTROL

SILICON

540 ns

90 ns

2.8 V

STGP3NB60HD by STMicroelectronics

STGP3NB60HD

STMicroelectronics

STGP3NB60HD by STMicroelectronics is a robust N-channel IGBT designed for motor control applications. It features a max collector-emitter voltage of 600 V, power dissipation of 70 W, and fast switching times (ton: 16 ns, toff: 168 ns). Its flange mount design ensures reliable performance in demanding environments.

10 A

600 V

SINGLE WITH BUILT-IN DIODE

5 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

70 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

168 ns

16 ns

FGP30N6S2D by Fairchild Semiconductor

FGP30N6S2D

Fairchild Semiconductor

Fairchild Semiconductor's FGP30N6S2D is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 45A max collector current. It has a built-in diode, 100ns fall time, and 163ns turn off time. Ideal for power control applications with a max power dissipation of 167W at up to 150°C operating temperature.

LOW CONDUCTION LOSS

45 A

600 V

SINGLE WITH BUILT-IN DIODE

100 ns

5 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

167 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

163 ns

28 ns

FGH60N6S2 by Fairchild Semiconductor

FGH60N6S2

Fairchild Semiconductor

FGH60N6S2 by Fairchild Semiconductor is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max power dissipation of 625W. It has a nominal turn-off time of 187ns, making it suitable for power control applications requiring fast switching speeds. The package style is flange mount with through-hole terminals, ideal for high-power applications in industrial settings.

LOW CONDUCTION LOSS

COLLECTOR

75 A

600 V

SINGLE

90 ns

5 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

625 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

187 ns

59 ns

NGTB30N60SWG by Onsemi

NGTB30N60SWG

Onsemi

NGTB30N60SWG by Onsemi is an N-CHANNEL IGBT with 600V VCE, 60A IC, and 189W Pd. It has a toff of 285ns and ton of 90ns, suitable for power control applications requiring fast switching speeds. The transistor comes in a PLASTIC/EPOXY package with through-hole terminals and can operate up to 150 °C.

COLLECTOR

60 A

600 V

SINGLE WITH BUILT-IN DIODE

6.5 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

189 W

Insulated Gate BIP Transistors

NO

Tin (Sn)

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

285 ns

90 ns

NGP15N41CL by Onsemi

NGP15N41CL

Onsemi

NGP15N41CL by Onsemi is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 440V and Max Power Dissipation of 107W. It features a built-in diode and resistor, making it ideal for AUTOMOTIVE IGNITION applications. With a rise time of 7000ns and fall time of 15000ns, this transistor offers reliable performance in automotive systems.

COLLECTOR

15 A

440 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

15000 ns

2.1 V

15 V

TO-220AB

R-PSFM-T3

e0

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

N-CHANNEL

107 W

Not Qualified

7000 ns

Insulated Gate BIP Transistors

NO

TIN LEAD

THROUGH-HOLE

SINGLE

AUTOMOTIVE IGNITION

SILICON

15500 ns

5700 ns

FMG1G100US60L by Fairchild Semiconductor

FMG1G100US60L

Fairchild Semiconductor

FMG1G100US60L by Fairchild Semiconductor is an N-CHANNEL IGBT with 600V VCEsat, 100A IC, and 2.8V VCE. Ideal for MOTOR CONTROL applications, it has a toff of 320ns and ton of 85ns. The package style is FLANGE MOUNT with PLASTIC/EPOXY body material and SILICON element.

LOW CONDUCTION LOSS

ISOLATED

100 A

600 V

SINGLE WITH BUILT-IN DIODE

20 V

R-PUFM-X7

1

7

125 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

400 W

Not Qualified

Insulated Gate BIP Transistors

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

MOTOR CONTROL

SILICON

320 ns

85 ns

2.8 V

MWI100-12E8 by IXYS Corporation

MWI100-12E8

IXYS Corporation

IXYS Corporation's MWI100-12E8 is an N-CHANNEL IGBT bridge with 6 elements and built-in diode, ideal for power control applications. It features a max VCEsat of 2.5V, can handle up to 165A collector current, and has a max operating temperature of 150°C. This UL RECOGNIZED device offers fast turn-off time (795ns) and high power dissipation (640W), making it suitable for demanding industrial environments.

ISOLATED

165 A

1200 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

20 V

R-XUFM-X11

e3

6

11

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

640 W

Not Qualified

UL RECOGNIZED

Insulated Gate BIP Transistors

NO

TIN OVER NICKEL

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

795 ns

345 ns

2.5 V

FGH20N6S2D by Fairchild Semiconductor

FGH20N6S2D

Fairchild Semiconductor

FGH20N6S2D by Fairchild Semiconductor is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max gate-emitter voltage of 20V. It has a single configuration with built-in diode, ideal for power control applications. This transistor offers fast switching times with a nominal turn-off time of 205ns and a max fall time of 105ns.

LOW CONDUCTION LOSS

28 A

600 V

SINGLE WITH BUILT-IN DIODE

105 ns

5 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

125 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

205 ns

11.5 ns

STGP10NB60SFP by STMicroelectronics

STGP10NB60SFP

STMicroelectronics

STGP10NB60SFP from STMicroelectronics is a robust N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600 V, power dissipation of 31.5 W, and operates up to 150 °C. Its through-hole design ensures easy integration in various systems.

ISOLATED

20 A

600 V

SINGLE

5 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

31.5 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

1160 ns

STGP3NB60KD by STMicroelectronics

STGP3NB60KD

STMicroelectronics

STGP3NB60KD by STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600V, a turn-off time of 220ns, and can handle up to 68W dissipation. Ideal for high-performance switching in industrial systems.

10 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

68 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

220 ns

19 ns

STGP7NB60KD by STMicroelectronics

STGP7NB60KD

STMicroelectronics

STGP7NB60KD by STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600V, 14A collector current, and a fast turn-off time of 202ns. Ideal for high-performance switching in industrial systems.

14 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

95 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

202 ns

21 ns

STGP12NB60HD by STMicroelectronics

STGP12NB60HD

STMicroelectronics

STGP12NB60HD from STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, a power dissipation of 100W, and fast switching times (ton: 51ns, toff: 295ns). Its robust design ensures reliable performance in demanding environments.

30 A

600 V

SINGLE WITH BUILT-IN DIODE

5 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

100 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

295 ns

51 ns

SGL160N60UFTU by Fairchild Semiconductor

SGL160N60UFTU

Fairchild Semiconductor

SGL160N60UFTU by Fairchild Semiconductor is an N-CHANNEL IGBT transistor with a max Collector-Emitter Voltage of 600V and a Max Collector Current of 160A. It is designed for MOTOR CONTROL applications, featuring a Nominal Turn Off Time of 262ns and Max Power Dissipation of 250W.

LOW CONDUCTION LOSS, HIGH SPEED SWITCHING

160 A

600 V

SINGLE

150 ns

6.5 V

20 V

TO-264AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

262 ns

150 ns

NGTB40N60FL2WG by Onsemi

NGTB40N60FL2WG

Onsemi

NGTB40N60FL2WG by Onsemi is an N-CHANNEL IGBT with 366W power dissipation, 600V collector-emitter voltage, and 80A collector current. It operates up to 175 °C making it ideal for high-power applications in industrial machinery, renewable energy systems, and electric vehicles.

80 A

600 V

6.5 V

20 V

e3

175 Cel

N-CHANNEL

366 W

Insulated Gate BIP Transistors

NO

Tin (Sn)

STGE200NB60S by STMicroelectronics

STGE200NB60S

STMicroelectronics

STGE200NB60S by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 200A IC, and 1.6V VCEsat. Ideal for POWER CONTROL applications, it has a max power dissipation of 600W and operates up to 150°C.

ISOLATED

200 A

600 V

SINGLE

20 V

R-XUFM-X4

1

4

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

600 W

Not Qualified

Insulated Gate BIP Transistors

NO

NICKEL

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

4600 ns

170 ns

1.6 V

STGW40NC60V by STMicroelectronics

STGW40NC60V

STMicroelectronics

STGW40NC60V from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, a nominal turn-off time of 247 ns, and operates at up to 150 °C. Ideal for high-performance switching in industrial systems.

80 A

600 V

SINGLE

5 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

247 ns

61 ns

STGW20NB60KD by STMicroelectronics

STGW20NB60KD

STMicroelectronics

STGW20NB60KD from STMicroelectronics is a powerful N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 150W, and fast switching times (ton: 76ns, toff: 280ns). Its robust design ensures reliable performance in demanding environments.

40 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247AC

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

150 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

280 ns

76 ns

STGP3NB60FD by STMicroelectronics

STGP3NB60FD

STMicroelectronics

STGP3NB60FD by STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 68W, and operates at up to 150 °C. Its fast switching times enhance efficiency in various systems.

6 A

600 V

SINGLE WITH BUILT-IN DIODE

5 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

68 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

535 ns

16.5 ns

STGP3NB60F by STMicroelectronics

STGP3NB60F

STMicroelectronics

STGP3NB60F from STMicroelectronics is a robust N-channel IGBT designed for motor control applications. It features a max collector-emitter voltage of 600 V, power dissipation of 68 W, and operates at up to 150 °C. Its fast switching times (ton: 16.5 ns, toff: 535 ns) enhance efficiency in various systems.

6 A

600 V

SINGLE

5 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

68 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

535 ns

16.5 ns

STGF3NB60FD by STMicroelectronics

STGF3NB60FD

STMicroelectronics

STGF3NB60FD from STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 25W, and a turn-off time of just 535ns. This robust device operates efficiently up to 150 °C.

ISOLATED

6 A

600 V

SINGLE WITH BUILT-IN DIODE

5 V

20 V

TO-220AB

R-PSFM-T3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

25 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

535 ns

16.5 ns

STGP12NB60KD by STMicroelectronics

STGP12NB60KD

STMicroelectronics

STGP12NB60KD from STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 125W, and a turn-off time of 461ns. This robust device operates efficiently at up to 150 °C.

30 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

125 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

461 ns

39.5 ns

IXGR40N60C2D1 by IXYS Corporation

IXGR40N60C2D1

IXYS Corporation

IXGR40N60C2D1 by IXYS Corp is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 56A max collector current, and 210ns turn-off time. Ideal for power control applications due to its single configuration with built-in diode and silicon transistor element material.

ISOLATED

56 A

600 V

SINGLE WITH BUILT-IN DIODE

R-PSIP-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

Not Qualified

NO

TIN SILVER COPPER

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

210 ns

38 ns

STGP100N30 by STMicroelectronics

STGP100N30

STMicroelectronics

STMicroelectronics' STGP100N30 is an N-CHANNEL IGBT with 330V VCE, 90A IC, and 250W Ptot. Ideal for general purpose switching applications due to its fast 310ns turn-off time and max operating temp of 150°C. Package style is flange mount with through-hole terminals.

90 A

330 V

SINGLE

5.5 V

20 V

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

250 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

GENERAL PURPOSE SWITCHING

SILICON

310 ns

STGD5NB120SZ-1 by STMicroelectronics

STGD5NB120SZ-1

STMicroelectronics

STGD5NB120SZ-1 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 1200 V, 10 A collector current, and operates at up to 150 °C. Its built-in diode enhances performance in various electronic systems.

COLLECTOR

10 A

1200 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

5 V

20 V

TO-251AA

R-PSIP-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

55 W

Not Qualified

Insulated Gate BIP Transistors

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

14100 ns

850 ns

STGF20NB60S by STMicroelectronics

STGF20NB60S

STMicroelectronics

STGF20NB60S by STMicroelectronics is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage, 24A max collector current, and 40W max power dissipation. Ideal for motor control applications due to its single configuration and fast turn-on time of 162ns.

ISOLATED

24 A

600 V

SINGLE

5 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

40 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

3600 ns

162 ns

STGF7NC60HD by STMicroelectronics

STGF7NC60HD

STMicroelectronics

STGF7NC60HD by STMicroelectronics is an N-channel IGBT ideal for power control applications. It features a max collector-emitter voltage of 600V, a turn-off time of 221ns, and operates at up to 150 °C. Its robust design ensures efficient performance in demanding environments.

ISOLATED

10 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

25 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

221 ns

25.5 ns

STGY40NC60VD by STMicroelectronics

STGY40NC60VD

STMicroelectronics

STMicroelectronics' STGY40NC60VD is an N-CHANNEL IGBT with 600V VCE, 80A IC, and 260W Ptot. Ideal for POWER CONTROL applications, it features a single configuration with built-in diode and a turn-off time of 247ns. The package is RECTANGULAR in shape with THROUGH-HOLE terminals.

80 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

R-PSIP-T3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

260 W

Not Qualified

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

247 ns

61 ns

IHP10T120 by Infineon Technologies

IHP10T120

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 138 W; Maximum Collector Current (IC): 16 A; Nominal Turn Off Time (toff): 769 ns;

COLLECTOR

16 A

1200 V

SINGLE WITH BUILT-IN DIODE

6.5 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

138 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

769 ns

69 ns

STGW19NC60W by STMicroelectronics

STGW19NC60W

STMicroelectronics

STGW19NC60W from STMicroelectronics is a powerful N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 140W, and operates at up to 150 °C. Its fast switching times enhance efficiency in various systems.

42 A

600 V

SINGLE

5.75 V

20 V

TO-247AC

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

140 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

MOTOR CONTROL

SILICON

204 ns

33 ns

IXGH40N60B2D1 by IXYS Corporation

IXGH40N60B2D1

IXYS Corporation

IXGH40N60B2D1 by IXYS Corp is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 75A max collector current, and 38ns turn on time. Ideal for power control applications due to its single configuration with built-in diode and plastic/epoxy package body material.

COLLECTOR

75 A

600 V

SINGLE WITH BUILT-IN DIODE

TO-247AD

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

390 ns

38 ns

IXGH40N60B2 by IXYS Corporation

IXGH40N60B2

IXYS Corporation

IXGH40N60B2 by IXYS Corp is an N-CHANNEL IGBT with 600V VCE, 75A IC, and 38ns ton. Ideal for POWER CONTROL applications due to its fast switching speed and high collector current capacity. The PLASTIC/EPOXY package with FLANGE MOUNT style ensures reliable performance in various environments.

COLLECTOR

75 A

600 V

SINGLE

TO-247AD

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

390 ns

38 ns

IXGN60N60C2D1 by IXYS Corporation

IXGN60N60C2D1

IXYS Corporation

IXYS Corporation's IXGN60N60C2D1 is an N-CHANNEL IGBT with VCEsat of 2.5V, IC of 75A, and Pmax of 480W. Ideal for power control applications due to its fast turn-off time (toff) of 210ns and high operating temperature up to 150°C. The device features a built-in diode, UL recognized, and is flange mountable for efficient heat dissipation.

LOW CONDUCTION LOSS

ISOLATED

75 A

600 V

SINGLE WITH BUILT-IN DIODE

20 V

R-PUFM-X4

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

480 W

Not Qualified

UL RECOGNIZED

Insulated Gate BIP Transistors

NO

NICKEL

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

210 ns

43 ns

2.5 V

IXGR32N170AH1 by IXYS Corporation

IXGR32N170AH1

IXYS Corporation

IXGR32N170AH1 by IXYS Corp is an N-CHANNEL IGBT with 1700V VCE, 26A IC, and 107ns ton. Ideal for power control applications, it features a built-in diode, isolated case connection, and UL recognition.

ISOLATED

26 A

1700 V

SINGLE WITH BUILT-IN DIODE

R-PSFM-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

UL RECOGNIZED

NO

TIN SILVER COPPER

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

370 ns

107 ns

STGP7NC60H by STMicroelectronics

STGP7NC60H

STMicroelectronics

STGP7NC60H from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, 25 A collector current, and operates at up to 150 °C. Ideal for high-performance switching in industrial systems.

25 A

600 V

SINGLE

5.75 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

80 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

221 ns

25.5 ns

MGP15N40CLG by Onsemi

MGP15N40CLG

Onsemi

MGP15N40CLG by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 440V and a max collector current of 15A. It features a built-in diode and resistor, making it ideal for automotive ignition applications. With a package style of FLANGE MOUNT and max power dissipation of 150W, this transistor operates at temperatures up to 175 °C.

VOLTAGE CLAMPING

COLLECTOR

15 A

440 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

20000 ns

2.1 V

22 V

TO-220AB

R-PSFM-T3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

N-CHANNEL

150 W

Not Qualified

6000 ns

Insulated Gate BIP Transistors

NO

TIN

THROUGH-HOLE

SINGLE

AUTOMOTIVE IGNITION

SILICON

20500 ns

6000 ns

NGP15N41CLG by Onsemi

NGP15N41CLG

Onsemi

NGP15N41CLG by Onsemi is an N-CHANNEL IGBT with built-in diode and resistor, ideal for automotive ignition applications. It features a max collector-emitter voltage of 440V, collector current of 15A, and power dissipation of 107W. With rise time of 7000ns and fall time of 15000ns, it operates at temperatures up to 175 °C.

COLLECTOR

15 A

440 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

15000 ns

2.1 V

15 V

TO-220AB

R-PSFM-T3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

N-CHANNEL

107 W

Not Qualified

7000 ns

Insulated Gate BIP Transistors

NO

TIN

THROUGH-HOLE

SINGLE

AUTOMOTIVE IGNITION

SILICON

15500 ns

5700 ns

STGF14NC60KD by STMicroelectronics

STGF14NC60KD

STMicroelectronics

STGF14NC60KD by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 11A max collector current, and 25W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 340ns.

ULTRA FAST

ISOLATED

11 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

25 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

340 ns

31.5 ns

STGW35HF60W by STMicroelectronics

STGW35HF60W

STMicroelectronics

STGW35HF60W from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, 200 W power dissipation, and operates at up to 150 °C. Ideal for high-performance switching in industrial systems.

LOW CONDUCTION LOSS

60 A

600 V

SINGLE

5.75 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

200 W

Not Qualified

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

295 ns

45 ns