Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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FD1000R17IE4BOSA2
Infineon Technologies
Infineon's FD1000R17IE4BOSA2 is an N-CHANNEL IGBT with 1700V max collector-emitter voltage and 1390A max collector current. Ideal for power control applications, it features a built-in diode, thermistor, and isolated case connection. With a turn on time of 720ns and turn off time of 1890ns, this rectangular package transistor operates at up to 175°C.
ISOLATED
1390 A
1700 V
SINGLE WITH BUILT-IN DIODE AND THERMISTOR
R-XUFM-X12
1
12
175 Cel
UNSPECIFIED
RECTANGULAR
FLANGE MOUNT
NOT SPECIFIED
N-CHANNEL
Not Qualified
NO
UPPER
POWER CONTROL
SILICON
1890 ns
720 ns
FD1400R12IP4DBOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 1400 A; No. of Elements: 1; Maximum Operating Temperature: 175 Cel;
1400 A
1200 V
R-XUFM-X11
11
1200 ns
340 ns
FD150R12RT4HOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: UPPER; Nominal Turn On Time (ton): 185 ns; Maximum Operating Temperature: 175 Cel;
SINGLE WITH BUILT-IN DIODE
R-XUFM-X4
4
490 ns
185 ns
FD200R12KE3HOSA1
Infineon's FD200R12KE3HOSA1 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 295A max collector current. It has a single configuration with built-in diode, 830ns turn off time, and 400ns turn on time. Ideal for high-power applications requiring fast switching such as industrial motor drives and renewable energy systems.
295 A
R-XUFM-X5
5
150 Cel
830 ns
400 ns
FD300R06KE3HOSA1
Infineon's FD300R06KE3HOSA1 is an N-CHANNEL IGBT with 600V max. collector-emitter voltage, 400A max. collector current, and 190ns nominal turn on time. Ideal for applications requiring high power switching such as motor drives, renewable energy systems, and industrial automation due to its single configuration with built-in diode and isolated case connection.
400 A
600 V
R-XUFM-X7
7
600 ns
190 ns
FD300R12KS4HOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 370 A; Nominal Turn Off Time (toff): 590 ns; No. of Terminals: 5;
370 A
UL APPROVED
590 ns
180 ns
FD900R12IP4DBOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Peak Reflow Temperature (C): NOT SPECIFIED; Qualification: Not Qualified; Case Connection: ISOLATED;
R-XUFM-X8
8
1300 ns
370 ns
FF100R12KS4HOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 150 A; Package Body Material: UNSPECIFIED; No. of Elements: 2;
150 A
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
2
FF100R12RT4HOSA1
FF100R12RT4HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max voltage of 1200V and turn off time of 490ns, suitable for POWER CONTROL applications. The transistor operates at up to 175°C and features a built-in diode in its RECTANGULAR package style.
FF1200R17KE3NOSA1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 1600 A; Terminal Form: UNSPECIFIED; JESD-30 Code: R-XUFM-X10;
1600 A
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
R-XUFM-X10
10
2100 ns
1050 ns
FF150R12KE3GHOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 225 A; Terminal Form: UNSPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
225 A
FF150R12KS4HOSA1
FF150R12KS4HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a toff of 590 ns, and IC of 225 A. It operates at a max temp of 150°C and VCE of 1200 V. Ideal for high-power applications requiring fast switching capabilities in industrial settings.
FAST
FF150R12ME3GBOSA1
FF150R12ME3GBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a built-in diode, and thermistor. It has a max voltage of 1200V, current of 200A, and turn-off time of 810ns. Ideal for applications requiring high power switching such as industrial motor drives and renewable energy systems.
200 A
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
810 ns
FF150R12MS4GBOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 225 A; Maximum Collector-Emitter Voltage: 1200 V; Package Shape: RECTANGULAR;
FF150R12RT4HOSA1
FF150R12RT4HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a toff of 490 ns, and ton of 185 ns. It is used for POWER CONTROL applications, featuring a max Vce of 1200V and operating temperature of 175°C in a FLANGE MOUNT package.
FF150R12YT3BOMA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 200 A; No. of Terminals: 24; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
R-XUFM-X24
24
610 ns
330 ns
FF150R17KE4HOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 250 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
250 A
930 ns
355 ns
FF150R17ME3GBOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 240 A; Nominal Turn On Time (ton): 366 ns; JESD-30 Code: R-XUFM-X11;
240 A
366 ns
FF200R06KE3HOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 260 A; Terminal Form: UNSPECIFIED; Qualification: Not Qualified;
260 A
FF200R12KE4HOSA1
FF200R12KE4HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max voltage of 1200V and current of 240A, making it ideal for POWER CONTROL applications. With a turn-off time of 800ns and turn-on time of 325ns, this RECTANGULAR package transistor operates at up to 175°C.
800 ns
325 ns
FF200R12KS4HOSA1
FF200R12KS4HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max voltage of 1200V, max current of 275A, and turn off time of 590ns. Ideal for applications requiring high power switching such as industrial motor drives and renewable energy systems.
275 A
FF200R17KE3HOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 390 A; Terminal Form: UNSPECIFIED; No. of Terminals: 7;
390 A
FF200R17KE4HOSA1
FF200R17KE4HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max voltage of 1700V and current of 310A, ideal for POWER CONTROL applications. With a turn-off time of 1400ns and turn-on time of 365ns, it operates at temperatures up to 175°C in a FLANGE MOUNT package.
310 A
1400 ns
365 ns
FF225R12ME3BOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 325 A; Maximum Collector-Emitter Voltage: 1200 V; Package Style (Meter): FLANGE MOUNT;
325 A
FF225R17ME3BOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 340 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Operating Temperature: 150 Cel;
340 A
375 ns
FF225R17ME4BOSA1
Infineon Technologies' FF225R17ME4BOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max voltage of 1700V, current of 340A, and turn off time of 1500ns. Ideal for power control applications due to its silicon material and operating temp up to 175°C.
1500 ns
350 ns
FF300R07KE4HOSA1
N-CHANNEL; Configuration: SERIES, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 365 A; JESD-30 Code: R-XUFM-X7; Peak Reflow Temperature (C): NOT SPECIFIED;
365 A
650 V
SERIES, 2 ELEMENTS WITH BUILT-IN DIODE
UL RECOGNIZED
491 ns
143 ns
FF300R12KE4HOSA1
FF300R12KE4HOSA1 by Infineon Technologies is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and 800 ns turn off time. It operates at a max temperature of 150°C, has a collector-emitter voltage of 1200V, and can handle a max current of 460A. Ideal for high-power applications requiring fast switching capabilities.
460 A
FF300R12KS4HOSA1
FF300R12KS4HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max voltage of 1200V, max current of 370A, and turn off time of 590ns. Ideal for applications requiring high power switching like industrial motor drives and renewable energy systems.
FF300R12KT3HOSA1
FF300R12KT3HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max voltage of 1200V and current of 480A, making it ideal for POWER CONTROL applications. With a turn-off time of 680ns and turn-on time of 215ns, this RECTANGULAR package transistor operates at temperatures up to 150°C.
480 A
680 ns
215 ns
FF300R12ME3BOSA1
FF300R12ME3BOSA1 by Infineon Technologies is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max voltage of 1200V, max current of 500A, and turn off time of 810ns. Ideal for applications requiring high power switching such as industrial motor drives and renewable energy systems.
500 A
FF300R12MS4BOSA1
FF300R12MS4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a max voltage of 1200V, and a current rating of 370A. It has a turn-off time of 590ns and a turn-on time of 180ns, making it suitable for high-power applications like industrial motor drives and renewable energy systems.
FF300R17KE3HOSA1
Infineon Technologies' FF300R17KE3HOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and 1700V max collector-emitter voltage. It has a toff of 1200ns and ton of 400ns, suitable for high-power applications like industrial motor drives due to its 404A max collector current capacity.
404 A
FF300R17KE4HOSA1
Infineon's FF300R17KE4HOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, ideal for POWER CONTROL applications. Featuring a Max VCEsat of 2.3V and Max Collector Current of 440A, it offers efficient performance. With a Nominal Turn Off Time of 930ns, this IGBT operates at temperatures up to 175°C.
440 A
20 V
1800 W
Insulated Gate BIP Transistors
2.3 V
FF300R17ME3BOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 375 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Transistor Element Material: SILICON;
375 A
384 ns
FF300R17ME4BOSA1
FF300R17ME4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max voltage of 1700V and current of 375A, making it ideal for POWER CONTROL applications. With a turn-off time of 1520ns and turn-on time of 405ns, this RECTANGULAR package transistor operates at temperatures up to 175°C.
1520 ns
405 ns
FF400R06KE3HOSA1
FF400R06KE3HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max collector current of 500A. It is designed for power control applications, offering a nominal turn-off time of 600ns and a nominal turn-on time of 190ns.
FF400R07KE4HOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 485 A; No. of Elements: 2; Terminal Position: UPPER;
485 A
540 ns
FF400R33KF2CNOSA1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 4800 W; Maximum Collector Current (IC): 660 A; No. of Terminals: 10;
660 A
3300 V
4800 W
1900 ns
480 ns
4.25 V
FF450R06ME3BOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 550 A; Qualification: Not Qualified; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
550 A
160 ns
FF450R12IE4BOSA2
FF450R12IE4BOSA2 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max voltage of 1200V and operates at up to 175°C. Ideal for POWER CONTROL applications, it features a turn off time of 900ns and a turn on time of 360ns.
900 ns
360 ns
FF450R12KE4HOSA1
Infineon's FF450R12KE4HOSA1 IGBT features N-CHANNEL polarity, 2 elements with diode in series configuration. With VCEsat of 2.15V and IC of 520A, it suits high-power applications like motor drives and renewable energy systems. Operating at up to 150°C, it offers fast turn-off time (toff) of 800ns for efficient power control.
520 A
2400 W
2.15 V
FF450R12KT4HOSA1
Infineon Technologies' FF450R12KT4HOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, featuring 1200V max collector-emitter voltage and 580A max collector current. Ideal for high-power applications requiring fast switching speeds, such as industrial motor drives and renewable energy systems.
580 A
230 ns
FF450R12ME3BOSA1
FF450R12ME3BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max voltage of 1200V, current of 600A, and turn-off time of 810ns. Ideal for applications requiring high power switching in industrial automation and renewable energy systems.
600 A
FF450R12ME4BOSA1
FF450R12ME4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a built-in diode, and thermistor. It has a max collector-emitter voltage of 1200V and can handle a max collector current of 675A. This rectangular package IGBT is suitable for applications requiring high power switching capabilities at temperatures up to 150°C.
675 A
740 ns
290 ns
FZ800R33KL2CNOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 9800 W; Maximum Collector Current (IC): 1500 A; Transistor Element Material: SILICON;
1500 A
COMPLEX
9800 W
4250 ns
1700 ns
3.65 V
FZ1000R33HE3BOSA1
N-CHANNEL; Configuration: PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 9600 W; Maximum Collector Current (IC): 1000 A; No. of Terminals: 7;
1000 A
PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE
9600 W
3550 ns
1150 ns
3.1 V
FD650R17IE4BOSA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 930 A; Qualification: Not Qualified; Nominal Turn On Time (ton): 720 ns;
930 A
1870 ns
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