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MG06100S-BN4MM

Littelfuse

MG06100S-BN4MM by Littelfuse

The Littelfuse MG06100S-BN4MM is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max VCEsat of 1.9V and can handle a Max Collector Current of 125A. Ideal for POWER CONTROL applications, it operates b/w -40 to 150 °C and features a Nominal Turn Off Time of 360ns.

Median Price

$73.490

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DigiKey

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$62.356

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Nova Conductors

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Singapore . 473 parts In-Stock

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AZTECH Wire

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Overview

Littelfuse's MG06100S-BN4MM insulated gate bipolar transistor (IGBT) is a game-changer in power control applications. With its N-channel configuration, series connected elements, and built-in diode, this product offers high performance and reliability. Perfect for various industrial uses, this transistor boasts a maximum collector-emitter voltage of 600V and a maximum collector current of 125A. Trust Littelfuse to deliver top-notch quality and innovation with the MG06100S-BN4MM IGBT.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs are known for their high efficiency and fast switching speeds, making them ideal for power control applications.

Maximum VCEsat: 1.9 V

Low VCEsat ensures minimal voltage drop across the transistor, leading to lower power losses and higher efficiency in power control circuits.

Maximum Collector-Emitter Voltage: 600 V

With a high maximum collector-emitter voltage rating, this IGBT can handle high voltage loads in power control applications.

Maximum Collector Current (IC): 125 A

The high maximum collector current rating allows the IGBT to handle large current flows efficiently, making it suitable for high-power applications.

Nominal Turn Off Time (toff): 360 ns

The fast turn-off time ensures quick response and precise control in power switching operations, improving overall system performance.

Reference Standard: UL RECOGNIZED

UL recognition signifies that the IGBT meets safety and quality standards, providing assurance of reliability and compliance in various applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) MG06100S-BN4MM attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Littelfuse

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Threshold Voltage:

6.5 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X7

No. of Elements:

2

No. of Terminals:

7

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Reference Standard:

UL RECOGNIZED

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

360 ns

Nominal Turn On Time (ton):

100 ns

Maximum VCEsat:

1.9 V

Trade Compliance

MG06100S-BN4MM Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Littelfuse

Littelfuse is a diversified industrial technology manufacturing company empowering a sustainable, connected, and safer world. Across more than 20 countries, and with approximately 18,000 global associates, we partner with customers to design and deliver innovative, reliable solutions. Serving over 100,000 end customers, our products are found in a variety of industrial, transportation, and electronics end markets—everywhere, every day. Headquartered in Chicago, Illinois, United States, Littelfuse was founded in 1927.

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