Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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MT45W2MW16PGA-70ITTR
Micron Technology
PSEUDO STATIC RAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Access Time: 70 ns;
70 ns
R-PBGA-B48
e1
8 mm
33554432 bit
PSEUDO STATIC RAM
16
1
48
2097152 words
2M
ASYNCHRONOUS
85 Cel
-40 Cel
2MX16
PLASTIC/EPOXY
VFBGA
RECTANGULAR
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
PARALLEL
Not Qualified
1 mm
1.95 V
1.7 V
YES
CMOS
INDUSTRIAL
TIN SILVER COPPER
BALL
.75 mm
BOTTOM
6 mm
MT45W4MW16BCGB-701ITTR
PSEUDO STATIC RAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B54;
R-PBGA-B54
67108864 bit
54
4194304 words
4M
SYNCHRONOUS
4MX16
260
1.8
Tin/Silver/Copper (Sn/Ag/Cu)
30
MT45W4MW16BCGB-708WTTR
PSEUDO STATIC RAM; Temperature Grade: OTHER; No. of Terminals: 54; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1 mm;
-30 Cel
OTHER
MT45W8MW16BGX-708WTTR
Micron Technology's MT45W8MW16BGX-708WTTR is a 8MX16 SRAM with 134217728 bit memory density. Operating at 1.8V, it offers a max access time of 70ns and features a parallel interface. Ideal for applications requiring fast and reliable data storage in compact electronic devices.
10 mm
134217728 bit
8388608 words
8M
8MX16
N01L63W2AT25I
Onsemi
N01L63W2AT25I by Onsemi is a 64KX16 SRAM with 3V nominal voltage, operating in industrial temperature range. It features 70ns max access time, 3-STATE output characteristics, and common input/output type. Ideal for applications requiring fast and reliable memory storage in compact electronic devices.
COMMON
R-PDSO-G44
18.41 mm
1048576 bit
STANDARD SRAM
44
65536 words
64K
64KX16
3-STATE
LSSOP
TSOP44,.46,32
SMALL OUTLINE, LOW PROFILE, SHRINK PITCH
3/3.3
1.25 mm
.00001 Amp
1.8 V
SRAMs
14 mA
3.6 V
2.3 V
3
GULL WING
.8 mm
DUAL
10.16 mm
N04L63W2AB27I
N04L63W2AB27I by Onsemi is a 256Kx16 SRAM with 3-STATE output, operating at 3V. It features a low profile grid array package and operates in industrial temperature range. Ideal for applications requiring fast access times and high memory density.
4194304 bit
262144 words
256K
256KX16
LFBGA
BGA48,6X8,30
GRID ARRAY, LOW PROFILE, FINE PITCH
1.34 mm
16 mA
N04L63W2AT27IT
N04L63W2AT27IT by Onsemi is a 256Kx16 SRAM with 3-STATE output, operating at 3V. It features a small outline package and operates in industrial temperature range. Ideal for applications requiring fast access time and low standby current.
N04L63W2AT27I
N04L63W2AT27I by Onsemi is a 256Kx16 SRAM with 3-STATE output, operating at 3V. It features a small outline package, suitable for industrial applications. With a max access time of 70ns and low standby current of 0.00001A, it offers reliable memory storage in various electronic devices.
N25S818HAS21I
N25S818HAS21I by Onsemi is a 32Kx8 SRAM with 16MHz clock frequency, operating at -40 to 85°C. It features separate I/O, 1.8V supply voltage, and 3-STATE output. Ideal for industrial applications requiring high-speed synchronous memory in a small outline package.
16 MHz
SEPARATE
R-PDSO-G8
e3
4.9 mm
262144 bit
8
1, (3 LINE)
32768 words
32K
32KX8
SOP
SOP8,.25
SMALL OUTLINE
SERIAL
1.75 mm
.0000005 Amp
10 mA
MATTE TIN
1.27 mm
3.91 mm
N25S818HAT21I
N25S818HAT21I by Onsemi is a 32KX8 SRAM with 1.8V supply, operating at -40 to 85 °C. It features synchronous mode, 16 MHz clock frequency, and 0.65mm terminal pitch. Ideal for industrial applications requiring high-speed memory with low power consumption.
4.4 mm
TSSOP
TSSOP8,.25
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
1.1 mm
.65 mm
3 mm
N01L83W2AN25I
N01L83W2AN25I by Onsemi is a 128Kx8 SRAM with 3.6V max supply voltage, operating at -40 to 85 °C. It features a small outline package, 0.5mm terminal pitch, and 70ns access time. Ideal for industrial applications requiring fast and reliable memory storage in compact spaces.
R-PDSO-G32
11.8 mm
32
131072 words
128K
128KX8
TSOP1
TSSOP32,.56,20
SMALL OUTLINE, THIN PROFILE
.5 mm
N01L83W2AT25I
N01L83W2AT25I by Onsemi is a 128Kx8 SRAM with 3-STATE output, operating at 3V. It features a small outline package, suitable for industrial applications. With a max access time of 70ns and low standby current, it's ideal for high-speed memory requirements.
18.4 mm
TSSOP32,.8,20
N02L63W3AB25IT
Onsemi's N02L63W3AB25IT is a 128KX16 SRAM with 3-STATE output, operating at 2.5/3.3V. It features a low profile grid array package suitable for industrial applications, offering fast access time of 70ns and memory density of 2097152 bits.
2097152 bit
128KX16
2.5/3.3
N02L63W3AB25I
N02L63W3AB25I by Onsemi is a 128Kx16 SRAM with 70ns access time, operating at 2.5/3.3V. It features a low profile grid array package and supports asynchronous operation. Ideal for industrial applications requiring fast and reliable memory storage in compact designs.
N02L63W3AT25IT
N02L63W3AT25IT by Onsemi is a 128KX16 SRAM with 131072 words, operating at 2.5/3.3V. It features a small outline package, -40 to 85 °C temperature range, and 70ns access time. Ideal for industrial applications requiring fast and reliable memory storage in compact designs.
N64S830HAS22I
N64S830HAS22I by Onsemi is an 8KX8 SRAM with 3-STATE output, operating at 20 MHz clock frequency. It has a memory density of 65536 bit and operates at industrial temperature grade. Ideal for applications requiring fast synchronous memory access in compact designs.
20 MHz
65536 bit
8192 words
8K
8KX8
.000004 Amp
2.5 V
3.9 mm
N64S830HAT22I
N64S830HAT22I by Onsemi is an 8Kx8 SRAM with 3.6V max supply voltage, 20MHz clock frequency, and -40 to 85°C operating temperature range. Ideal for industrial applications requiring fast synchronous memory access in a compact 0.65mm pitch package.
TSOP2
1.2 mm
N02L83W2AN25IT
N02L83W2AN25IT by Onsemi is a 256Kx8 SRAM with 3-STATE output, operating at 3V. It features a small outline, thin profile package and operates in industrial temperature range. Ideal for applications requiring fast access times and low standby current.
256KX8
N02L83W2AN25I
STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 32; Package Code: TSOP1; Package Shape: RECTANGULAR; No. of Words Code: 256K;
N02L83W2AT25I
N02L83W2AT25I by Onsemi is a 256Kx8 SRAM with 70ns access time, operating at 3V. It features a small outline package and operates in industrial temperature range. Ideal for applications requiring fast and reliable data storage in harsh environments.
N08L63W2AB27I
Onsemi's N08L63W2AB27I is a 512Kx16 SRAM with 3-STATE output, operating at 2.5/3.3V. It features a thin profile grid array package suitable for industrial applications requiring fast access times of 85ns and low standby current of 0.00001Amp.
85 ns
8388608 bit
524288 words
512K
512KX16
TFBGA
GRID ARRAY, THIN PROFILE, FINE PITCH
15 mA
N25S830HAS22I
N25S830HAS22I by Onsemi is a 32KX8 SRAM with synchronous operation and 3-STATE output. It operates at 3V, has a clock frequency of 20MHz, and is ideal for industrial applications requiring high-speed memory access in small outline packages.
2.7 V
N25S830HAT22I
N25S830HAT22I by Onsemi is a 32KX8 SRAM with 3-STATE output, operating at 20 MHz. Ideal for industrial applications, it features a supply voltage of 2.7-3.6V and operates in synchronous mode with separate I/O type. Package style is small outline, thin profile, shrink pitch, making it suitable for compact designs.
N01L63W3AT25IT
N01L63W3AT25IT by Onsemi is a 64KX16 SRAM with 70ns access time, operating at 3V. It features a small outline package and operates in industrial temperature range. Ideal for applications requiring fast and reliable memory storage in harsh environments.
N04L63W1AB27I
N04L63W1AB27I by Onsemi is a 256Kx16 SRAM with 3-STATE output, operating at 3V. It features a low profile grid array package and operates in industrial temperature range. Ideal for applications requiring fast access times and high memory density.
N04L63W1AT27I
N04L63W1AT27I by Onsemi is a 256Kx16 SRAM with 3-STATE output, operating at 3V. It features a small outline package, suitable for industrial applications. With a max access time of 70ns and low standby current of 0.00001A, it offers reliable memory storage in various electronic devices.
N08L6182AB7I
N08L6182AB7I by Onsemi is a 512Kx16 SRAM with 85ns access time, operating at 1.8V. It features a thin profile grid array package suitable for industrial applications requiring fast and reliable memory storage in common asynchronous mode.
1.8/2
1.2 V
2.2 V
1.65 V
N64S818HAS21I
N64S818HAS21I by Onsemi is an 8KX8 SRAM with 16 MHz clock frequency, 1.8V supply, and -40 to 85 °C operating range. Ideal for industrial applications requiring small outline package and separate I/O type in a synchronous mode setup.
N64S818HAT21I
N64S818HAT21I by Onsemi is an 8KX8 SRAM with 16 MHz clock frequency, 1.8V supply voltage, and -40 to 85 °C operating temperature range. Ideal for industrial applications requiring fast synchronous memory access in a compact 0.65mm pitch package.
UPD44644182AF5-E40-FQ1-A
Renesas Electronics
DDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; No. of Words Code: 4M;
.45 ns
250 MHz
R-PBGA-B165
17 mm
75497472 bit
DDR SRAM
18
165
70 Cel
0 Cel
4MX18
LBGA
BGA165,11X15,40
GRID ARRAY
1.5/1.8,1.8
1.46 mm
510 mA
1.9 V
MOS
COMMERCIAL
15 mm
DS1258W-100
Maxim Integrated
NON-VOLATILE SRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 40; Package Shape: RECTANGULAR; Terminal Finish: TIN LEAD; Package Style (Meter): MICROELECTRONIC ASSEMBLY;
100 ns
R-XDMA-P40
e0
NON-VOLATILE SRAM MODULE
40
UNSPECIFIED
MICROELECTRONIC ASSEMBLY
3 V
3.3
NO
TIN LEAD
PIN/PEG
M68AW256ML70ND6T
STMicroelectronics
M68AW256ML70ND6T from STMicroelectronics is a 256Kx16 asynchronous SRAM with a max access time of 70 ns. It operates at a nominal voltage of 3V and supports industrial temp ranges (-40 °C to 85°C). Ideal for high-speed data storage in compact applications.
.000009 Amp
1.5 V
20 mA
IDT71024S12TYI8
Integrated Device Technology
IDT71024S12TYI8 by Integrated Device Technology is a 128Kx8 SRAM with 12ns access time, operating at 5V. It features a small outline package and offers 3-STATE output characteristics. Ideal for industrial applications requiring fast and reliable memory storage in parallel configuration.
12 ns
R-PDSO-J32
20.96 mm
SOJ
SOJ32,.34
225
5
3.76 mm
.01 Amp
4.5 V
160 mA
5.5 V
Tin/Lead (Sn85Pb15)
J BEND
7.62 mm
IDT71024S15TYI8
IDT71024S15TYI8 by Integrated Device Technology is a 128Kx8 SRAM with 3-STATE output, operating at 5V. It features a max access time of 15ns and is suitable for industrial applications requiring fast and reliable memory storage in a small outline package. With parallel interface and common I/O type, it offers high performance in various electronic devices.
15 ns
155 mA
M48Z35AV-10PC1
M48Z35AV-10PC1 by STMicroelectronics is a 32Kx8 non-volatile SRAM module with CMOS technology. It operates at 3.3V, has a max access time of 100ns, and consumes up to 50mA of supply current. This rectangular package with 28 terminals is ideal for applications requiring reliable data storage in commercial temperature environments.
R-PDIP-T28
39.625 mm
28
DIP
DIP28,.6
IN-LINE
9.65 mm
.003 Amp
50 mA
THROUGH-HOLE
2.54 mm
15.24 mm
M68AW256ML70ZB6
M68AW256ML70ZB6 from STMicroelectronics is a 256Kx16 asynchronous SRAM with a max access time of 70 ns. It operates at 3V, supports industrial temp ranges (-40 °C to 85 °C), and features a thin profile grid array package. Ideal for high-speed data storage in embedded systems.
7 mm
M68AW128ML70ZB6
M68AW128ML70ZB6 from STMicroelectronics is a 128Kx16 asynchronous SRAM with a max access time of 70 ns. It operates at a nominal voltage of 3V and supports industrial temp ranges (-40 °C to 85°C). Ideal for high-speed data storage in compact applications.
CY7C1019BV33-15ZI
Cypress Semiconductor
CY7C1019BV33-15ZI by Cypress Semiconductor is a 128Kx8 SRAM with 15ns access time, operating at 3.3V. It is ideal for industrial applications requiring high-speed and low-power memory solutions in a small outline package.
20.95 mm
3.63 V
2.97 V
M68AW512ML70ND6
M68AW512ML70ND6 from STMicroelectronics is a 512Kx16 asynchronous SRAM with a max access time of 70 ns. It operates b/w 2.7V and 3.6V, suitable for industrial applications due to its -40 °C to 85 °C temp range. Its compact SOIC package ensures efficient surface mounting.
CY7C1383C-100AC
CY7C1383C-100AC by Cypress Semiconductor is a 1MX18 SRAM with 100 terminals, operating at 100 MHz. It has a synchronous mode and common I/O type, suitable for applications requiring fast access times and high memory density. The package is rectangular in shape, surface mountable, and operates at temperatures b/w 0 to 70°C.
8.5 ns
FLOW-THROUGH ARCHITECTURE
100 MHz
R-PQFP-G100
20 mm
18874368 bit
100
1048576 words
1M
1MX18
LQFP
QFP100,.63X.87
FLATPACK, LOW PROFILE
2.5/3.3,3.3
1.6 mm
.07 Amp
3.14 V
175 mA
3.135 V
QUAD
14 mm
SNJ54LS670W
Texas Instruments
SNJ54LS670W by Texas Instruments is a 16-bit SRAM with 4x4 organization, operating at 5V. It features a max clock frequency of 35MHz and offers an access time of 45ns. Ideal for military applications requiring fast and reliable memory storage in a compact flatpack package.
45 ns
35 MHz
R-GDFP-F16
10.3 mm
16 bit
4
4 words
125 Cel
-55 Cel
4X4
CERAMIC, GLASS-SEALED
DFP
FL16,.3
FLATPACK
MIL-PRF-38535
2.03 mm
.05 Amp
Other Memory ICs
5.25 V
4.75 V
TTL
MILITARY
FLAT
6.73 mm
MT45W4MW16BFB-706WT
PSEUDO STATIC RAM; Temperature Grade: OTHER; No. of Terminals: 54; Package Code: VFBGA; Package Shape: RECTANGULAR; Memory Width: 16;
SYNCHRONOUS BURST MODE POSSIBLE
BGA54,6X9,30
1.8,1.8/3
.00012 Amp
30 mA
MT45W4MW16PFA-70IT
PSEUDO STATIC RAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Surface Mount: YES;
25 mA
MT45W4MW16PFA-70WT
PSEUDO STATIC RAM; Temperature Grade: OTHER; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Finish: TIN LEAD;
STK20C04-WF25I
Simtek
Simtek's STK20C04-WF25I is a 512x8 non-volatile SRAM with 4096-bit memory density. Operating at 5V, it has an access time of 25ns and consumes a max of 90mA. Ideal for industrial applications requiring reliable asynchronous memory solutions in a compact rectangular package.
25 ns
36.83 mm
4096 bit
NON-VOLATILE SRAM
512 words
512
512X8
4.57 mm
.00075 Amp
90 mA
M48Z2M1V-85PL1
M48Z2M1V-85PL1 by STMicroelectronics is a 2Mx8 non-volatile SRAM with a max access time of 85 ns. It operates asynchronously at a supply voltage of 3.3V and supports temperatures from 0 °C to 70 °C. Ideal for applications requiring reliable data retention, it features a compact in-line package with 36 terminals.
R-PDIP-T36
52.96 mm
16777216 bit
36
2MX8
DIP36,.6
9.52 mm
.001 Amp
70 mA
M68AW031AM70N6T
M68AW031AM70N6T from STMicroelectronics is a 32Kx8 asynchronous SRAM with a max access time of 70 ns. It operates at a nominal voltage of 3V and supports industrial temperature ranges (-40 °C to 85 °C). Ideal for applications requiring fast, reliable memory in compact designs.
R-PDSO-G28
TSSOP28,.53,22
.000006 Amp
.55 mm
MT45W2MW16PABA-70IT
PSEUDO STATIC RAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Operating Mode: ASYNCHRONOUS;
e8
.00011 Amp
Tin/Silver/Copper (Sn98.5Ag1.0Cu0.5)
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