Loading...

M68AW031AM70N6T

STMicroelectronics

M68AW031AM70N6T by STMicroelectronics

M68AW031AM70N6T from STMicroelectronics is a 32Kx8 asynchronous SRAM with a max access time of 70 ns. It operates at a nominal voltage of 3V and supports industrial temperature ranges (-40 °C to 85 °C). Ideal for applications requiring fast, reliable memory in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Prism Electronics

USA . 36,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

36,000

-

-

-

-

Vyrian

USA . 8,364 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,364

-

-

-

-

Digiode

USA . 2,227 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,227

-

-

-

-

Anansix

USA . 1,219 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,219

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,180 parts In-Stock

1+ parts

$3.145

100+ parts

-

1k+ parts

$2.831

10k+ parts

-

1,180

$3.145

-

$2.831

-

MKK Technologies

India . 504 parts In-Stock

1+ parts

$5.915

100+ parts

-

1k+ parts

-

10k+ parts

-

504

$5.915

-

-

-

DigiPath Technology Company

USA . 504 parts In-Stock

1+ parts

$5.915

100+ parts

-

1k+ parts

-

10k+ parts

-

504

$5.915

-

-

-

Microchip USA

USA . 189 parts In-Stock

1+ parts

$7.250

100+ parts

-

1k+ parts

-

10k+ parts

-

189

$7.250

-

-

-

AZTECH Wire

Italy . 983 parts In-Stock

1+ parts

$21.820

100+ parts

-

1k+ parts

-

10k+ parts

-

983

$21.820

-

-

-

Perfect Parts

USA . 40,320 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

40,320

-

-

-

-

A-Z Elektronik GmbH

Germany . 6,047 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,047

-

-

-

-

Alle Elektronik GmbH

Germany . 4,031 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,031

-

-

-

-

Corphita

USA . 2,285 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,285

-

-

-

-

Parana Technologies

USA . 316 parts In-Stock

1+ parts

-

100+ parts

$3.761

1k+ parts

-

10k+ parts

-

316

-

$3.761

-

-

Overview

Elevate your designs with the M68AW031AM70N6T SRAM from STMicroelectronics, a trusted leader in semiconductor innovation. This high-quality, asynchronous memory solution offers exceptional performance and reliability for industrial applications, ensuring optimal efficiency in demanding environments. With low power consumption and impressive speed, it enhances your systems while streamlining integration. Unlock unparalleled value and empower your projects with ST's commitment to excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy provides durability and resistance to environmental factors, ensuring reliable performance.

Surface Mount: YES

Surface mount technology allows for a more compact design, optimizing space on circuit boards.

Package Shape: RECTANGULAR

Rectangular packages are efficient for layout in PCBs and help in minimizing trace lengths.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for simpler design implementations with reduced timing complexities.

Input/Output Type: COMMON

Common I/O configuration enhances versatility in system integration and interfacing.

Nominal Supply Voltage / Vsup (V): 3

Operating at a low nominal supply voltage of 3V improves energy efficiency and reduces power consumption.

Power Supplies (V): 3/3.3

Supported voltage levels of 3V and 3.3V ensure compatibility with a wide range of electronic systems.

No. of Terminals: 28

A higher number of terminals allows for more functionality and connections within the same package size.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

The small outline, thin profile design enhances space-saving on modern PCBs, accommodating dense layouts.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this product maintains performance in moderately harsh environments.

Organization: 32KX8

The memory organization of 32Kx8 allows for efficient data access and storage, suitable for various applications.

Output Characteristics: 3-STATE

3-state output enables bus sharing amongst multiple devices, increasing the flexibility of system design.

Minimum Standby Voltage: 1.5 V

A low minimum standby voltage helps in reducing power consumption when the device is not in active use.

Minimum Operating Temperature: -40 °C

The wide operating temperature range ensures reliable performance even in extreme cold environments.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and reliable connections during assembly.

Terminal Position: DUAL

Dual terminal positioning aids in effective PCB layout and enhances soldering ease.

Maximum Seated Height: 1.25 mm

A low seated height is critical for compact designs and helps in maintaining low profiles in electronic devices.

Width: 8 mm

An 8 mm width strikes a balance between functionality and space efficiency, fitting well in diverse applications.

Minimum Supply Voltage (Vsup): 2.7 V

This minimum supply voltage allows compatibility with a wider range of power sources and systems.

Length: 11.8 mm

A manageable length makes integration into various circuit designs straightforward and space-efficient.

Temperature Grade: INDUSTRIAL

Industrial temperature grading means this SRAM can endure rigorous operating conditions, increasing its reliability.

Technology: CMOS

CMOS technology ensures low power consumption and high-speed operation, ideal for modern applications.

Parallel or Serial: PARALLEL

Parallel data access enhances transfer speeds, making the product suitable for high-performance applications.

Terminal Form: GULL WING

Gull-wing leads allow for easy mounting on PCB surfaces and facilitate robust connections.

Maximum Supply Current: 30 mA

A maximum supply current of 30 mA indicates a balance between performance and power efficiency.

No. of Words: 32768 words

A capacity of 32K words meets the demands of many common applications, providing adequate memory resources.

Memory Width: 8

An 8-bit memory width aligns well with typical data bus sizes, making it compatible with numerous designs.

Terminal Pitch: 0.55 mm

A small terminal pitch of 0.55 mm is suitable for high-density applications, allowing for compact layouts.

No. of Words Code: 32K

The 32K words code highlights the memory capability, suitable for various embedded applications.

Maximum Supply Voltage (Vsup): 3.6 V

This maximum supply voltage ensures stable operation under varied conditions, protecting against over-voltage scenarios.

Memory Density: 262144 bit

A memory density of 262144 bits can accommodate significant data storage needs for many applications.

Memory IC Type: STANDARD SRAM

As a standard SRAM, it is widely understood and supported in the industry, ensuring broad compatibility.

Maximum Standby Current: 0.000006 Amp

An exceptionally low maximum standby current exemplifies energy efficiency, crucial for battery-powered applications.

Maximum Access Time: 70 ns

A maximum access time of 70 ns provides quick data retrieval, enhancing overall system performance.

Technical Specifications

SRAM M68AW031AM70N6T attributes and parameters. Explore more SRAM devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G28

JESD-609 Code:

e0

Length:

11.8 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP28,.53,22

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Power Supplies (V):

3/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.25 mm

Maximum Standby Current:

.000006 Amp

Minimum Standby Voltage:

1.5 V

Sub-Category:

SRAMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.55 mm

Terminal Position:

DUAL

Width:

8 mm

Trade Compliance

M68AW031AM70N6T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20