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M68AF031AL55B1

STMicroelectronics

M68AF031AL55B1 by STMicroelectronics

M68AF031AL55B1 from STMicroelectronics is a 32Kx8 asynchronous SRAM with a max access time of 55 ns. It operates at a nominal voltage of 5V and features a dual terminal form factor. Ideal for commercial applications requiring fast data storage and retrieval.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,755 parts In-Stock

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4,755

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Digiode

USA . 1,657 parts In-Stock

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1,657

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Anansix

USA . 1,198 parts In-Stock

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1,198

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,769 parts In-Stock

1+ parts

$2.214

100+ parts

-

1k+ parts

$1.993

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1,769

$2.214

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$1.993

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MKK Technologies

India . 1,100 parts In-Stock

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$4.164

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$4.164

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DigiPath Technology Company

USA . 1,100 parts In-Stock

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$4.164

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1,100

$4.164

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Parana Technologies

USA . 1,911 parts In-Stock

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$2.648

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1,911

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$2.648

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Corphita

USA . 1,577 parts In-Stock

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Overview

Elevate your designs with the M68AF031AL55B1 SRAM from STMicroelectronics, a leader in cutting-edge semiconductor technology. This high-quality, asynchronous memory solution combines reliability and efficiency, making it ideal for applications like consumer electronics, automotive systems, and industrial controls. With low power consumption and fast access times, this SRAM not only enhances performance but also ensures longevity in your projects, delivering exceptional value you can trust. Choose STMicroelectronics for unmatched quality and innovation!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package material offers durability and protection against environmental factors, making the SRAM reliable in various applications.

Package Shape: RECTANGULAR

The rectangular shape helps in efficient PCB layout and component placement, optimizing space in electronic designs.

Operating Mode: ASYNCHRONOUS

Being asynchronous allows the SRAM to read and write data independently of a clock signal, which can simplify design and enhance flexibility.

Input/Output Type: COMMON

Common I/O type facilitates easy integration in various systems, making it versatile for different applications.

Nominal Supply Voltage / Vsup (V): 5

A nominal supply voltage of 5V is standard for many digital circuits, enhancing compatibility with existing systems.

Power Supplies (V): 5

Having a standard power supply requirement simplifies circuit design and makes it easy to implement.

No. of Terminals: 28

The 28 terminals provide ample connectivity options, making the SRAM suitable for a wide range of applications.

Package Style (Meter): IN-LINE

In-line package style is space-efficient and allows for easy assembly on PCB, contributing to lower manufacturing costs.

Maximum Operating Temperature: 70 °C

A maximum operating temperature of 70 °C ensures the SRAM remains functional in warm environments, broadening its application range.

Organization: 32KX8

The 32Kx8 organization provides a balance between memory size and width, suitable for various data storage needs.

Output Characteristics: 3-STATE

3-state outputs allow multiple devices to share the same data bus, optimizing system design and increasing efficiency.

Minimum Standby Voltage: 2 V

A lower standby voltage ensures energy efficiency during inactive periods, making it suitable for battery-powered applications.

Minimum Operating Temperature: 0 °C

The minimum operating temperature of 0 °C allows reliable functionality in moderate environments, versatile for diverse applications.

Terminal Finish: MATTE TIN

Matte tin finish enhances solderability and reduces oxidation, resulting in better long-term performance in electrical connections.

Terminal Position: DUAL

Dual terminal positioning allows for flexible mounting options on PCBs, improving design adaptability.

Maximum Seated Height: 5.08 mm

A maximum seated height of 5.08 mm allows for compact installations without requiring significant height above the PCB.

Width: 15.24 mm

The width of 15.24 mm contributes to a space-saving design, making it a practical choice for densely populated circuit boards.

Minimum Supply Voltage (Vsup): 4.5 V

The minimum supply voltage of 4.5V allows for a wider range of supply options, enhancing circuit flexibility.

Length: 37.085 mm

The length of 37.085 mm facilitates efficient PCB layout while providing a standard footprint useful for various applications.

Temperature Grade: COMMERCIAL

Being commercially graded signifies reliability for non-industrial applications, making it cost-effective for a variety of uses.

Technology: CMOS

CMOS technology offers low power consumption and high-speed performance, ideal for modern electronic designs.

Parallel or Serial: PARALLEL

Parallel access allows for faster data transfer rates, making it suitable for applications that demand high-speed memory access.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust connections for easier soldering and installation, beneficial in various applications.

Maximum Supply Current: 50 mA

A maximum supply current of 50 mA indicates low power consumption, ideal for energy-efficient designs.

No. of Words: 32768 words

With 32,768 words, this SRAM offers substantial data storage capability, suited for applications requiring significant memory.

Memory Width: 8

An 8-bit memory width is standard for many applications, providing a good balance between complexity and performance.

Terminal Pitch: 2.54 mm

A terminal pitch of 2.54 mm allows compatibility with standard PCB layouts, enabling easy integration with existing designs.

No. of Words Code: 32K

The 32K word code indicates ample capacity for data storage, catering to a wide array of memory needs.

Maximum Supply Voltage (Vsup): 5.5 V

A maximum supply voltage of 5.5V provides flexibility in power supply options, ensuring compatibility with varying circuit requirements.

Memory Density: 262144 bit

With a memory density of 262,144 bits, this SRAM supports applications requiring high capacity in a compact space.

Memory IC Type: STANDARD SRAM

Being a standard SRAM type makes it widely applicable and compatible with most electronic systems, reducing integration complexities.

Maximum Standby Current: 0.000006 Amp

Very low maximum standby current ensures minimal energy waste during periods of inactivity, enhancing overall efficiency.

Maximum Access Time: 55 ns

A maximum access time of 55 ns supports fast data retrieval, making it a great choice for performance-sensitive applications.

Technical Specifications

SRAM M68AF031AL55B1 attributes and parameters. Explore more SRAM devices from STMicroelectronics

Specs

Maximum Access Time:

55 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDIP-T28

JESD-609 Code:

e3

Length:

37.085 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

32KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Maximum Standby Current:

.000006 Amp

Minimum Standby Voltage:

2 V

Sub-Category:

SRAMs

Maximum Supply Current:

50 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

15.24 mm

Trade Compliance

M68AF031AL55B1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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