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M68AF031AL55N1

STMicroelectronics

M68AF031AL55N1 by STMicroelectronics

M68AF031AL55N1 from STMicroelectronics is a 32Kx8 asynchronous SRAM with a 5V supply, ideal for high-speed applications. It features a max access time of 55 ns and operates within -40 °C to 70 °C. This compact, surface-mount device is perfect for consumer electronics.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,128 parts In-Stock

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1,128

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Anansix

USA . 892 parts In-Stock

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892

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Digiode

USA . 311 parts In-Stock

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311

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 2,099 parts In-Stock

1+ parts

$2.750

100+ parts

-

1k+ parts

$2.475

10k+ parts

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2,099

$2.750

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$2.475

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MKK Technologies

India . 551 parts In-Stock

1+ parts

$5.171

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551

$5.171

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DigiPath Technology Company

USA . 551 parts In-Stock

1+ parts

$5.171

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551

$5.171

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Parana Technologies

USA . 1,309 parts In-Stock

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$3.288

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1,309

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$3.288

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Corphita

USA . 333 parts In-Stock

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333

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Overview

Elevate your designs with the M68AF031AL55N1 SRAM from STMicroelectronics—an industry leader renowned for quality and innovation. This versatile memory solution is perfect for applications needing reliable, high-speed data access, offering efficient performance in compact formats. With a robust temperature range and low power consumption, it ensures reliability in demanding conditions, empowering you to create products that stand out with speed, efficiency, and longevity.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection from environmental factors, making it suitable for a wide range of applications.

Surface Mount: YES

Allows for efficient use of board space and facilitates automated assembly processes.

Package Shape: RECTANGULAR

Optimizes layout on circuit boards, enabling compact design.

Operating Mode: ASYNCHRONOUS

Simplifies design by allowing the memory to operate independently of a clock signal.

Input/Output Type: COMMON

Supports a variety of system architectures and simplifies interface designs.

Nominal Supply Voltage / Vsup: 5V

Compatibility with standard power supply voltages in electronics, ensuring ease of integration.

Power Supplies (V): 5

Allows for straightforward power management without requiring additional voltage regulators.

No. of Terminals: 28

Provides sufficient connectivity options for interfacing with other components.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

Ideal for space-constrained designs where a compact footprint is advantageous.

Maximum Operating Temperature: 70 °C

Suitable for standard ambient conditions, ensuring reliability in typical operating environments.

Organization: 32KX8

Offers a well-balanced memory architecture for efficient data storage and retrieval.

Output Characteristics: 3-STATE

Facilitates multiple devices sharing the same data bus, enhancing system flexibility.

Minimum Standby Voltage: 2V

Allows for operation even under low-voltage conditions, which is important for power-sensitive applications.

Minimum Operating Temperature: 0 °C

Ensures functionality in cooler environments, broadening application scope.

Terminal Finish: TIN LEAD

Provides good solderability and durability, improving the reliability of connections.

Terminal Position: DUAL

Enables easy access and connections, simplifying board layout design.

Maximum Seated Height: 1.2 mm

Maintains a low profile, further optimizing space usage on circuit boards.

Width: 8 mm

Compact design that fits well into various PCB layouts.

Minimum Supply Voltage (Vsup): 4.5V

Offers design flexibility by operating adequately at lower voltages.

Length: 11.8 mm

Compact length allows for efficient use of space on circuit boards.

Temperature Grade: COMMERCIAL

Suitable for a range of commercial applications, balancing performance and cost.

Technology: CMOS

Provides low power consumption and high-speed performance, making it suitable for battery-operated devices.

Parallel or Serial: PARALLEL

Offers faster data transfer rates, enhancing overall system performance.

Terminal Form: GULL WING

Facilitates easier handling and mounting on PCBs, improving assembly efficiency.

Maximum Supply Current: 50 mA

Minimal power draw during operation, making it energy-efficient.

No. of Words: 32768 words

Provides substantial memory capacity for various applications, balancing size and performance.

Memory Width: 8

Enables efficient data storage in byte-sized segments, simplifying data handling.

Terminal Pitch: 0.55 mm

Allows for tighter layouts on PCBs, important for modern electronic designs.

No. of Words Code: 32K

Indicates the memory capacity, suitable for a range of applications from simple to complex.

Maximum Supply Voltage (Vsup): 5.5V

Provides a voltage range that accommodates various system designs.

Memory Density: 262144 bit

Offers robust data storage capabilities for applications requiring significant memory.

Memory IC Type: STANDARD SRAM

A widely used type of memory that offers reliable performance for both consumer and commercial electronics.

Maximum Standby Current: 0.000006 Amp

Promotes energy efficiency when the device is not actively being used, critical for battery-powered applications.

Maximum Access Time: 55 ns

Ensures quick data retrieval times, enhancing the overall speed of electronic systems.

Technical Specifications

SRAM M68AF031AL55N1 attributes and parameters. Explore more SRAM devices from STMicroelectronics

Specs

Maximum Access Time:

55 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G28

JESD-609 Code:

e0

Length:

11.8 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

32KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP28,.53,22

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.000006 Amp

Minimum Standby Voltage:

2 V

Sub-Category:

SRAMs

Maximum Supply Current:

50 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.55 mm

Terminal Position:

DUAL

Width:

8 mm

Trade Compliance

M68AF031AL55N1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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