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CY14V104NA-BA45XIT

Infineon Technologies

CY14V104NA-BA45XIT by Infineon Technologies

Infineon's CY14V104NA-BA45XIT is a 256Kx16 SRAM with 3.3V nominal voltage, operating in industrial temperature range. It features asynchronous mode, 45ns access time, and 1.8/3.3V power supplies. Ideal for applications requiring fast and reliable non-volatile memory storage in compact electronic devices.

Median Price

$31.570

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IBS Electronics

USA . 2,000 parts In-Stock

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-

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$31.570

2,000

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$31.570

Digiode

USA . 796 parts In-Stock

1+ parts

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796

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Vyrian

USA . 779 parts In-Stock

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779

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Nova Conductors

Japan . 700 parts In-Stock

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700

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 105 parts In-Stock

1+ parts

$4.274

100+ parts

-

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105

$4.274

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Modulus Dynamics

Lithuania . 296 parts In-Stock

1+ parts

$4.993

100+ parts

$4.793

1k+ parts

$4.594

10k+ parts

-

296

$4.993

$4.793

$4.594

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Aztec Data Supply Inc.

USA . 4,935 parts In-Stock

1+ parts

$5.150

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4,935

$5.150

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AZTECH Wire

Italy . 237 parts In-Stock

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$8.183

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237

$8.183

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Ampacity Inc.

Singapore . 1,551 parts In-Stock

1+ parts

$18.000

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1,551

$18.000

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Semicontronic

India . 445 parts In-Stock

1+ parts

$27.000

100+ parts

$26.325

1k+ parts

$26.190

10k+ parts

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445

$27.000

$26.325

$26.190

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Continental Prestige Electronics

USA . 6,326 parts In-Stock

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6,326

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Alle Elektronik GmbH

Germany . 5,079 parts In-Stock

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5,079

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Argo Parts USA

USA . 3,038 parts In-Stock

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3,038

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A-Z Elektronik GmbH

Germany . 1,223 parts In-Stock

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Bastille Electronics

Australia . 450 parts In-Stock

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450

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Corphita

USA . 67 parts In-Stock

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67

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Overview

Unlock the power of top-quality SRAM technology with the CY14V104NA-BA45XIT from Infineon Technologies. Designed to deliver high performance in industrial applications, this non-volatile memory solution offers 256Kx16 organization and fast 45ns maximum access time. With a compact package style and versatile operating mode, this product provides customers with reliable and efficient memory storage for their projects. Trust Infineon Technologies for advanced solutions that meet your needs and exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a lightweight and durable packaging for the SRAM, ensuring easy handling and protection from external elements.

Surface Mount: YES

Facilitates easy and efficient installation on circuit boards, saving time and effort in assembly processes.

Nominal Supply Voltage / Vsup (V): 3.3

Operates efficiently at a standard voltage level, making it compatible with various electronic systems.

No. of Terminals: 48

Offers a sufficient number of connection points for interfacing with other components, enhancing versatility in circuit design.

Maximum Operating Temperature: 85 °C

Ensures reliable performance even in high-temperature environments, contributing to the overall durability of the product.

Memory IC Type: NON-VOLATILE SRAM

Combines the benefits of fast access times with non-volatile storage, providing a reliable and high-performance memory solution for various applications.

Technical Specifications

SRAM CY14V104NA-BA45XIT attributes and parameters. Explore more SRAM devices from Infineon Technologies

Specs

Maximum Access Time:

45 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PBGA-B48

JESD-609 Code:

e1

Length:

10 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

48

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256KX16

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA48,6X8,30

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8,3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.008 Amp

Minimum Standby Voltage:

3 V

Sub-Category:

SRAMs

Maximum Supply Current:

52 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

6 mm

Trade Compliance

CY14V104NA-BA45XIT Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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