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CY14B116L-ZS25XIT

Infineon Technologies

CY14B116L-ZS25XIT by Infineon Technologies

Infineon's CY14B116L-ZS25XIT is a 2MX8 SRAM with 16777216-bit memory density, operating at 3V. It features an access time of 25ns and is ideal for industrial applications requiring non-volatile memory storage in a small outline package.

Median Price

$93.019

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 19 parts In-Stock

1+ parts

$93.019

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Flip Electronics

USA . 2,000 parts In-Stock

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2,000

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Digiode

USA . 986 parts In-Stock

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986

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Chip Stock

USA . 955 parts In-Stock

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Vyrian

USA . 734 parts In-Stock

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734

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 1,334 parts In-Stock

1+ parts

$2.000

100+ parts

$1.950

1k+ parts

$1.940

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1,334

$2.000

$1.950

$1.940

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Aztec Data Supply Inc.

USA . 1,631 parts In-Stock

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$3.053

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1,631

$3.053

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Modulus Dynamics

Lithuania . 1,019 parts In-Stock

1+ parts

$3.395

100+ parts

$3.259

1k+ parts

$3.123

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1,019

$3.395

$3.259

$3.123

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Corohmni

South Africa . 632 parts In-Stock

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$5.591

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AZTECH Wire

Italy . 734 parts In-Stock

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$15.245

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Ampacity Inc.

Singapore . 458 parts In-Stock

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$22.000

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Continental Prestige Electronics

USA . 4,289 parts In-Stock

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$93.019

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$91.158

4,289

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$91.158

Netroflash

USA . 1,000 parts In-Stock

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$93.019

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$93.019

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Component Stockers USA

USA . 118 parts In-Stock

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$1,013.340

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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7,000

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Argo Parts USA

USA . 4,452 parts In-Stock

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Corphita

USA . 495 parts In-Stock

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495

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Overview

Unlock the power of cutting-edge technology with the CY14B116L-ZS25XIT by Infineon Technologies, a leading manufacturer known for top-quality products. This SRAM device offers unparalleled reliability and performance in various applications, making it a versatile choice for your project needs. With its compact design and advanced features, this product provides exceptional value and benefits to customers seeking high-speed data storage solutions. Experience seamless operation and improved efficiency with the CY14B116L-ZS25XIT, setting new standards in memory technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the product easy to handle and resistant to damage.

Surface Mount: YES

This feature allows for easy installation and saves space on the PCB, making the product suitable for compact designs.

No. of Functions: 1

With a single function, the product is focused and efficient, perfect for specific applications.

Package Shape: RECTANGULAR

The rectangular shape allows for easy integration into existing systems and maximizes space utilization.

Operating Mode: ASYNCHRONOUS

The asynchronous operation provides flexibility and ensures smooth performance in various operating conditions.

Nominal Supply Voltage / Vsup (V): 3

The 3V supply voltage is common and ensures compatibility with standard power sources.

No. of Terminals: 44

Having 44 terminals allows for multiple connections and configurations, making the product versatile and adaptable.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

This compact style saves space and reduces weight, making the product ideal for portable devices.

Maximum Operating Temperature: 85 °C

The high operating temperature range ensures reliability and performance in extreme conditions.

Organization: 2MX8

The 2M x 8 organization provides a large memory capacity and efficient data storage capabilities.

Minimum Operating Temperature: -40 °C

The low operating temperature range allows the product to function reliably in cold environments.

Terminal Finish: PURE TIN

The pure tin finish ensures good conductivity and corrosion resistance, extending the product's lifespan.

Terminal Position: DUAL

Dual terminal positioning provides flexibility in installation and allows for easy connection to external devices.

Maximum Seated Height: 1.194 mm

The low seated height saves space and ensures compatibility with slim devices.

Width: 10.16 mm

The compact width makes the product suitable for narrow PCB layouts and small electronic components.

Minimum Supply Voltage (Vsup): 2.7 V

The low minimum supply voltage allows for energy-efficient operation and extends battery life.

Peak Reflow Temperature °C: 260

The high peak reflow temperature ensures secure soldering and reliable connections during assembly.

Length: 18.415 mm

The product's length is optimized for efficient PCB layout and compact system integration.

Temperature Grade: INDUSTRIAL

The industrial-grade temperature tolerance ensures reliable operation in harsh industrial environments.

Technology: CMOS

The CMOS technology provides low power consumption and high-speed operation, making the product energy-efficient.

Parallel or Serial: PARALLEL

The parallel operation allows for fast data transfer and efficient processing, suitable for high-performance applications.

Terminal Form: GULL WING

The gull-wing terminal form provides secure connections and easy installation, ensuring reliability and durability.

No. of Words: 2097152 words

With over 2 million words of memory, the product offers ample storage capacity for data-intensive applications.

Memory Width: 8

The 8-bit memory width enables efficient data processing and storage, making the product suitable for various computing tasks.

Terminal Pitch: 0.8 mm

The narrow terminal pitch allows for precise connections and maximizes space utilization on the PCB.

No. of Words Code: 2M

The 2M words code provides a large memory address space, suitable for complex data storage and retrieval.

Moisture Sensitivity Level (MSL): 3

The MSL 3 rating indicates moderate moisture sensitivity, ensuring the product's reliability in typical operating environments.

Maximum Supply Voltage (Vsup): 3.6 V

The high maximum supply voltage ensures compatibility with different power sources and stable operation under varying conditions.

Memory Density: 16777216 bit

With a memory density of 16,777,216 bits, the product offers high-density storage and efficient data processing capabilities.

Memory IC Type: NON-VOLATILE SRAM

The non-volatile SRAM type combines the speed of SRAM with the data retention of non-volatile memory, making it ideal for applications requiring fast access and persistent storage.

Maximum Access Time: 25 ns

The fast maximum access time ensures quick data retrieval and efficient performance in time-critical applications.

Technical Specifications

SRAM CY14B116L-ZS25XIT attributes and parameters. Explore more SRAM devices from Infineon Technologies

Specs

Maximum Access Time:

25 ns

JESD-30 Code:

R-PDSO-G44

Length:

18.415 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

44

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.194 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

PURE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Width:

10.16 mm

Trade Compliance

CY14B116L-ZS25XIT Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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