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IDT71256SA20YGI

Renesas Electronics

IDT71256SA20YGI by Renesas Electronics

The Renesas Electronics IDT71256SA20YGI is a 32Kx8 SRAM with 3-STATE output, operating at 5V. It features a fast access time of 20ns and industrial temperature grade suitability. Ideal for applications requiring high-speed data storage in industrial environments.

Median Price

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Lifecycle Status

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Corohmni

South Africa . 106 parts In-Stock

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Ampacity Inc.

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Italy . 768 parts In-Stock

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Overview

Experience exceptional performance and reliability with the Renesas Electronics IDT71256SA20YGI SRAM. Renowned for their cutting-edge technology and innovative solutions, Renesas Electronics delivers premium quality products that cater to various applications in the industrial sector. This versatile SRAM offers a seamless experience with its common input/output type and asynchronous operating mode, ensuring optimal functionality. Trust Renesas Electronics to provide top-tier components that exceed expectations, delivering unmatched value and efficiency to customers looking for superior memory solutions. Elevate your projects with the IDT71256SA20YGI by Renesas Electronics today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a long lifespan for the product.

Operating Mode: ASYNCHRONOUS

Allows for flexible and independent operation of each memory cell, leading to faster read and write speeds.

Nominal Supply Voltage / Vsup (V): 5

Offers a standard and stable voltage supply for reliable performance of the product.

Memory IC Type: STANDARD SRAM

Utilizes fast and reliable Static Random Access Memory technology, ensuring high-speed data storage and retrieval.

Maximum Access Time: 20 ns

Provides quick access to stored data, making this product suitable for applications requiring fast performance.

Technical Specifications

SRAM IDT71256SA20YGI attributes and parameters. Explore more SRAM devices from Renesas Electronics

Specs

Maximum Access Time:

20 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-J28

JESD-609 Code:

e3

Length:

17.9324 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

28

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOJ

Package Equivalence Code:

SOJ28,.34

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

3.556 mm

Maximum Standby Current:

.015 Amp

Minimum Standby Voltage:

4.5 V

Sub-Category:

SRAMs

Maximum Supply Current:

145 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

7.5184 mm

Trade Compliance

IDT71256SA20YGI Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

NSN

5962-01-550-6132, 5962015506132

NIIN

015506132

Manufacturer Highlights

Renesas Electronics

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