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IDT71V016SA20PHGI8

Renesas Electronics

IDT71V016SA20PHGI8 by Renesas Electronics

The Renesas Electronics IDT71V016SA20PHGI8 is a 64Kx16 SRAM with 3.3V supply voltage, operating in asynchronous mode. It features a small outline package, industrial temperature grade, and 20ns max access time. Ideal for applications requiring fast and reliable memory storage in harsh environments.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

< 1k

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Vyrian

USA . 398 parts In-Stock

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398

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Nova Conductors

Japan . 300 parts In-Stock

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300

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Corohmni

South Africa . 1,130 parts In-Stock

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$5.885

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1,130

$5.885

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Ampacity Inc.

Singapore . 819 parts In-Stock

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$11.000

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819

$11.000

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AZTECH Wire

Italy . 247 parts In-Stock

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$13.375

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247

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Semicontronic

India . 754 parts In-Stock

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$23.000

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$22.425

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$22.310

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754

$23.000

$22.425

$22.310

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Continental Prestige Electronics

USA . 4,115 parts In-Stock

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4,115

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Argo Parts USA

USA . 2,907 parts In-Stock

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Bastille Electronics

Australia . 100 parts In-Stock

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Overview

Unlock superior performance and reliability with the IDT71V016SA20PHGI8 by Renesas Electronics, a leading manufacturer known for their cutting-edge technology. This SRAM device offers seamless integration into a wide range of applications, providing customers with unparalleled speed and efficiency. Experience the value of enhanced data processing and storage capabilities, backed by Renesas Electronics' reputation for top-quality products. Upgrade your system with this innovative solution and elevate your performance to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a durable and lightweight housing for the product.

Nominal Supply Voltage / Vsup (V): 3.3

Operates efficiently at a standard voltage, making it compatible with most systems.

Memory Density: 1048576 bit

Offers a high density of memory storage, allowing for extensive data storage capacity.

Maximum Operating Temperature: 85 °C

Has a high operating temperature range, ensuring reliability in various environments.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high-speed performance.

Maximum Access Time: 20 ns

Provides fast access times for quick data retrieval and processing.

Technical Specifications

SRAM IDT71V016SA20PHGI8 attributes and parameters. Explore more SRAM devices from Renesas Electronics

Specs

Maximum Access Time:

20 ns

Additional Features:

ALSO OPERATES WITH 3V TO 3.6 V SUPPLY

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G44

JESD-609 Code:

e3

Length:

18.41 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

44

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64KX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP44,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.01 Amp

Minimum Standby Voltage:

3 V

Sub-Category:

SRAMs

Maximum Supply Current:

120 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3.15 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10.16 mm

Trade Compliance

IDT71V016SA20PHGI8 Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Renesas Electronics

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