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IS66WVH8M8DALL-200B1LI

Integrated Silicon Solution

IS66WVH8M8DALL-200B1LI by Integrated Silicon Solution

IS66WVH8M8DALL-200B1LI is an 8MX8 SRAM with 200 MHz clock frequency, 1.7-1.95 V supply voltage, and 85°C operating temperature. Ideal for industrial applications requiring high-speed synchronous memory with a thin profile grid array package.

Median Price

$4.850

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 503 parts In-Stock

1+ parts

$4.850

100+ parts

$4.290

1k+ parts

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10k+ parts

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503

$4.850

$4.290

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DigiKey

USA . 186 parts In-Stock

1+ parts

$4.850

100+ parts

$4.179

1k+ parts

$3.851

10k+ parts

$3.794

186

$4.850

$4.179

$3.851

$3.794

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 71 parts In-Stock

1+ parts

$3.080

100+ parts

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71

$3.080

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Vyrian

USA . 4,453 parts In-Stock

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4,453

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 306 parts In-Stock

1+ parts

$2.337

100+ parts

-

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306

$2.337

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Aztec Data Supply Inc.

USA . 2,275 parts In-Stock

1+ parts

$2.900

100+ parts

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2,275

$2.900

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Aranea Global

USA . 1,000 parts In-Stock

1+ parts

$3.018

100+ parts

-

1k+ parts

$2.898

10k+ parts

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1,000

$3.018

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$2.898

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Argo Parts USA

USA . 4,778 parts In-Stock

1+ parts

$3.080

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4,778

$3.080

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Continental Prestige Electronics

USA . 181 parts In-Stock

1+ parts

$3.080

100+ parts

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$3.018

181

$3.080

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$3.018

AZTECH Wire

Italy . 859 parts In-Stock

1+ parts

$11.684

100+ parts

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859

$11.684

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Authorized Procurement Solutions

USA . 373 parts In-Stock

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373

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Overview

Unlock the power of reliable and high-performance memory with the IS66WVH8M8DALL-200B1LI by Integrated Silicon Solution. This cutting-edge SRAM offers seamless synchronization, common input/output type, and a wide operating temperature range, making it ideal for industrial applications. With a compact design and thin profile package, this memory module delivers exceptional speed and efficiency, maximizing your device's performance. Trust in the quality and expertise of Integrated Silicon Solution to enhance your products with top-of-the-line memory solutions. Upgrade your devices today with the IS66WVH8M8DALL-200B1LI for unparalleled reliability and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Surface Mount: YES

Facilitates easy and efficient installation on circuit boards, saving time and effort during assembly.

Nominal Supply Voltage: 1.8V

Optimal supply voltage for efficient operation and power consumption, enhancing overall performance.

Maximum Operating Temperature: 85°C

Allows the product to function reliably even in high-temperature environments, making it suitable for industrial use.

Memory Density: 67108864 bit

High memory density enables storing a large amount of data in a compact space, ideal for applications requiring extensive memory storage.

Maximum Clock Frequency: 200 MHz

High clock frequency allows for fast data processing and transfer speeds, improving the overall efficiency of the product.

Technical Specifications

SRAM IS66WVH8M8DALL-200B1LI attributes and parameters. Explore more SRAM devices from Integrated Silicon Solution

Specs

Maximum Clock Frequency (fCLK):

200 MHz

Input/Output Type:

COMMON

JESD-30 Code:

R-PBGA-B24

Length:

8 mm

Memory Density:

67108864 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

24

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8MX8

Output Characteristics:

3-STATE

Output Enable:

NO

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA24,5X5,40

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.00004 Amp

Minimum Standby Voltage:

1.7 V

Maximum Supply Current:

40 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Width:

6 mm

Trade Compliance

IS66WVH8M8DALL-200B1LI Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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