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IS66WVS4M8ALL-104NLI

Integrated Silicon Solution

IS66WVS4M8ALL-104NLI by Integrated Silicon Solution

IS66WVS4M8ALL-104NLI by Integrated Silicon Solution is a 4MX8 SRAM with synchronous operation and 104 MHz clock frequency. It has a memory density of 33554432 bit and operates at an industrial temperature grade. Ideal for applications requiring high-speed data processing in compact electronic devices.

Median Price

$4.460

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 782 parts In-Stock

1+ parts

$4.460

100+ parts

$3.847

1k+ parts

$3.542

10k+ parts

-

782

$4.460

$3.847

$3.542

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Mouser Electronics

USA . 678 parts In-Stock

1+ parts

$4.460

100+ parts

$3.840

1k+ parts

-

10k+ parts

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678

$4.460

$3.840

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 89 parts In-Stock

1+ parts

$2.431

100+ parts

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1k+ parts

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89

$2.431

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Vyrian

USA . 2,900 parts In-Stock

1+ parts

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2,900

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 2,951 parts In-Stock

1+ parts

$2.431

100+ parts

-

1k+ parts

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10k+ parts

$2.382

2,951

$2.431

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-

$2.382

Argo Parts USA

USA . 1,427 parts In-Stock

1+ parts

$2.431

100+ parts

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1,427

$2.431

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

$2.431

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1,000

$2.431

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AZTECH Wire

Italy . 384 parts In-Stock

1+ parts

$19.260

100+ parts

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384

$19.260

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Overview

Unlock the power of reliable and high-performance memory with the IS66WVS4M8ALL-104NLI by Integrated Silicon Solution. As a leading manufacturer in the industry, ISS delivers exceptional quality SRAM products that are perfect for a wide range of applications. This versatile memory solution offers customers unparalleled value, benefits, and advantages, making it the ideal choice for your next project. Trust ISS to provide you with the cutting-edge technology you need to succeed.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Nominal Supply Voltage / Vsup (V): 1.8

Operates at a low voltage, making it energy efficient and suitable for portable devices.

Maximum Clock Frequency (fCLK): 104 MHz

High clock frequency allows for fast data processing and improved performance.

Memory Density: 33554432 bit

High memory density provides ample storage capacity for data-intensive applications.

Temperature Grade: INDUSTRIAL

Can withstand harsh industrial environments, making it reliable for various industrial applications.

Technical Specifications

SRAM IS66WVS4M8ALL-104NLI attributes and parameters. Explore more SRAM devices from Integrated Silicon Solution

Specs

Maximum Clock Frequency (fCLK):

104 MHz

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G8

Length:

4.9 mm

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

8

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

4MX8

Output Enable:

NO

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Maximum Seated Height:

1.75 mm

Maximum Standby Current:

.0002 Amp

Minimum Standby Voltage:

1.65 V

Maximum Supply Current:

15 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

3.9 mm

Trade Compliance

IS66WVS4M8ALL-104NLI Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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