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IS66WVS4M8ALL-104TLI

Integrated Silicon Solution

IS66WVS4M8ALL-104TLI by Integrated Silicon Solution

IS66WVS4M8ALL-104TLI by Integrated Silicon Solution is a 4MX8 SRAM with synchronous operation and 104 MHz clock frequency. It features a memory density of 33554432 bits, suitable for industrial applications requiring fast and reliable data storage in a compact package. With a low standby current of 0.0002 Amp and operating temperature range from -40 to 85 °C, it offers efficient performance for various electronic devices.

Median Price

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Lifecycle Status

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USA . 594 parts In-Stock

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Nova Conductors

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AZTECH Wire

Italy . 857 parts In-Stock

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Argo Parts USA

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Continental Prestige Electronics

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Overview

Unlock the power of reliable and high-performance memory with the IS66WVS4M8ALL-104TLI by Integrated Silicon Solution. As a leading manufacturer in the industry, ISS delivers cutting-edge SRAM technology that is perfect for a wide range of applications. From industrial to consumer electronics, this synchronous SRAM offers fast data access and low power consumption, making it the ideal choice for your next project. Experience seamless operation and superior quality with the IS66WVS4M8ALL-104TLI, setting new standards in memory performance.

Feature Benefit Bullets

Surface Mount: YES

Allows for easy and convenient installation on a circuit board, saving space and reducing assembly time.

Nominal Supply Voltage / Vsup (V): 1.8

Operates efficiently at a low voltage, contributing to energy savings and reducing power consumption.

Maximum Operating Temperature: 85 °C

Can withstand high operating temperatures, ensuring reliability in various industrial environments.

Minimum Operating Temperature: -40 °C

Capable of functioning in extreme low temperature conditions, making it ideal for use in diverse settings.

Memory IC Type: STANDARD SRAM

Utilizes Static Random-Access Memory technology, providing fast and stable data storage and retrieval.

Technical Specifications

SRAM IS66WVS4M8ALL-104TLI attributes and parameters. Explore more SRAM devices from Integrated Silicon Solution

Specs

Maximum Clock Frequency (fCLK):

104 MHz

Input/Output Type:

COMMON

JESD-30 Code:

R-XDSO-N8

Length:

4 mm

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

8

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

4MX8

Output Enable:

NO

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

SOLCC8,.12,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Parallel or Serial:

SERIAL

Maximum Seated Height:

.6 mm

Maximum Standby Current:

.0002 Amp

Minimum Standby Voltage:

1.65 V

Maximum Supply Current:

15 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Width:

3 mm

Trade Compliance

IS66WVS4M8ALL-104TLI Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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