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CY14B108L-ZS45XIT

Infineon Technologies

CY14B108L-ZS45XIT by Infineon Technologies

Infineon's CY14B108L-ZS45XIT is a 1MX8 SRAM with 8388608 bit memory density. Operating at 3V, it offers a max access time of 45ns and consumes up to 57mA supply current. Ideal for industrial applications requiring fast and reliable non-volatile memory solutions in compact form factors.

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8

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1k+

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Verical

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Vyrian

USA . 2,609 parts In-Stock

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Martec Srl

Italy . 2,000 parts In-Stock

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Digiode

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Bristol Electronics

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Nova Conductors

Japan . 66 parts In-Stock

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Ampacity Inc.

Singapore . 2,904 parts In-Stock

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Corohmni

South Africa . 1,105 parts In-Stock

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Modulus Dynamics

Lithuania . 1,101 parts In-Stock

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$3.915

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Aztec Data Supply Inc.

USA . 2,446 parts In-Stock

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Semicontronic

India . 2,745 parts In-Stock

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Continental Prestige Electronics

USA . 3,710 parts In-Stock

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Component Stockers USA

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Argo Parts USA

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Overview

Unlock the power of reliable and efficient memory solutions with the CY14B108L-ZS45XIT by Infineon Technologies. As a leading manufacturer in the industry, Infineon Technologies delivers top-quality SRAM products that cater to a wide range of applications. With a focus on performance and durability, this non-volatile SRAM offers customers unparalleled value and benefits. Whether you're in the industrial sector or looking for cutting-edge technology for your project, the CY14B108L-ZS45XIT is the perfect choice for high-speed data storage and retrieval. Experience the difference with Infineon Technologies and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes this SRAM product lightweight and durable.

Surface Mount: YES

With surface mount capability, this SRAM can be easily installed on PCBs, making it suitable for compact electronic devices.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for fast and independent access to memory locations, enhancing overall system performance.

Nominal Supply Voltage / Vsup (V): 3

The nominal supply voltage of 3V ensures compatibility with a wide range of electronic systems, offering flexibility in design.

Power Supplies (V): 3/3.3

This SRAM supports dual power supplies at 3V and 3.3V, providing options for different power configurations in the system.

No. of Terminals: 44

With 44 terminals, this SRAM offers a high level of connectivity for seamless integration into complex electronic setups.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient use of space on the PCB, making it suitable for compact designs.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85°C ensures reliability in demanding environmental conditions.

Organization: 1MX8

The organization of 1MX8 (1 Megabit x 8) provides ample memory capacity for storing and retrieving data efficiently.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40°C, this SRAM can function reliably in extreme cold environments.

Terminal Finish: MATTE TIN

The matte tin terminal finish offers excellent solderability, ensuring a secure electrical connection during installation.

Terminal Position: DUAL

Dual terminal positions provide flexibility in PCB layout and ease of connectivity with other components in the system.

Maximum Seated Height: 1.194 mm

The low maximum seated height allows for slim and compact device designs, ideal for space-constrained applications.

Width: 10.16 mm

The width of 10.16mm makes this SRAM suitable for small form factor devices where space is limited.

Minimum Supply Voltage (Vsup): 2.7 V

The minimum supply voltage requirement of 2.7V ensures reliable operation even at lower voltage levels, enhancing versatility.

Maximum Time At Peak Reflow Temperature (s): 40

The maximum time at peak reflow temperature of 40 seconds ensures proper soldering and assembly of the SRAM on the PCB.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this SRAM can withstand the rigors of the soldering process without degradation.

Length: 18.415 mm

The length of 18.415mm allows for efficient placement on the PCB, maximizing available space for other components.

Temperature Grade: INDUSTRIAL

The industrial temperature grade specification ensures reliable performance in harsh industrial environments.

Technology: CMOS

The CMOS technology used in this SRAM offers low power consumption and high speed operation, making it energy efficient.

Parallel or Serial: PARALLEL

The parallel interface design provides fast data transfer rates, making this SRAM ideal for applications requiring high-speed memory access.

Terminal Form: GULL WING

The gull wing terminal form factor provides mechanical strength and ease of soldering, ensuring a secure connection in the system.

Maximum Supply Current: 57 mA

With a maximum supply current of 57mA, this SRAM consumes minimal power, contributing to overall energy efficiency.

No. of Words: 1048576 words

With a capacity of 1048576 words, this SRAM offers ample memory storage for storing large amounts of data.

Memory Width: 8

The memory width of 8 bits allows for efficient handling of data, enabling high-speed read and write operations.

Terminal Pitch: 0.8 mm

The small terminal pitch of 0.8mm provides high density connectivity, making this SRAM suitable for compact PCB designs.

No. of Words Code: 1M

The code for 1M (1 million) words indicates the high memory capacity of this SRAM, making it suitable for data-intensive applications.

Moisture Sensitivity Level (MSL): 3

With a moisture sensitivity level of 3, this SRAM is suitable for use in environments with moderate humidity levels.

Maximum Supply Voltage (Vsup): 3.6 V

The maximum supply voltage of 3.6V ensures reliable operation without risk of overvoltage, enhancing component longevity.

Memory Density: 8388608 bit

The high memory density of 8388608 bits allows for efficient storage of large amounts of data in a compact space.

Memory IC Type: NON-VOLATILE SRAM

The non-volatile SRAM technology retains data even when power is removed, ensuring data integrity and reliability.

Maximum Standby Current: 0.01 Amp

With a maximum standby current of 0.01A, this SRAM consumes very low power during idle periods, conserving energy.

Maximum Access Time: 45 ns

The maximum access time of 45 nanoseconds ensures quick retrieval of data, enhancing system performance.

Technical Specifications

SRAM CY14B108L-ZS45XIT attributes and parameters. Explore more SRAM devices from Infineon Technologies

Specs

Maximum Access Time:

45 ns

JESD-30 Code:

R-PDSO-G44

JESD-609 Code:

e3

Length:

18.415 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

44

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP44,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.194 mm

Maximum Standby Current:

.01 Amp

Sub-Category:

SRAMs

Maximum Supply Current:

57 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

10.16 mm

Trade Compliance

CY14B108L-ZS45XIT Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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