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CY62167G30-45BVXA

Infineon Technologies

CY62167G30-45BVXA by Infineon Technologies

Infineon's CY62167G30-45BVXA is a 1MX16 SRAM with 45ns access time, operating at 3.6V. It features a very thin profile grid array package suitable for industrial applications requiring fast and reliable memory storage. With common I/O type and output enable function, it offers high-speed parallel data processing capabilities in harsh environments.

Median Price

$13.200

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 1,920 parts In-Stock

1+ parts

-

100+ parts

$13.200

1k+ parts

-

10k+ parts

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1,920

-

$13.200

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Flip Electronics (Authorized)

USA . 1,920 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

-

1,920

-

-

-

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$30.525

100+ parts

-

1k+ parts

-

10k+ parts

-

100

$30.525

-

-

-

Flip Electronics

USA . 1,920 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,920

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-

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Vyrian

USA . 1,895 parts In-Stock

1+ parts

-

100+ parts

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1,895

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-

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Digiode

USA . 78 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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78

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,758 parts In-Stock

1+ parts

$11.220

100+ parts

-

1k+ parts

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10k+ parts

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1,758

$11.220

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Modulus Dynamics

Lithuania . 4,216 parts In-Stock

1+ parts

$24.750

100+ parts

$23.760

1k+ parts

$22.770

10k+ parts

-

4,216

$24.750

$23.760

$22.770

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Continental Prestige Electronics

USA . 1,013 parts In-Stock

1+ parts

$30.525

100+ parts

-

1k+ parts

-

10k+ parts

$29.914

1,013

$30.525

-

-

$29.914

Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

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100+ parts

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3,000

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Argo Parts USA

USA . 2,407 parts In-Stock

1+ parts

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100+ parts

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2,407

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Corphita

USA . 742 parts In-Stock

1+ parts

-

100+ parts

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742

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Bastille Electronics

Australia . 50 parts In-Stock

1+ parts

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100+ parts

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50

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Overview

Unlock unparalleled speed and reliability with the CY62167G30-45BVXA by Infineon Technologies, a leading manufacturer in the industry. This SRAM memory chip offers unmatched performance and efficiency for a wide range of applications. Experience seamless operation with its common input/output type and 3-state output characteristics. With a minimal standby voltage of 1V and maximum access time of 45ns, this product ensures optimal functionality and power savings. Trust Infineon Technologies to deliver cutting-edge technology that exceeds expectations. Elevate your projects with the CY62167G30-45BVXA and experience superior quality like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes this product lightweight and durable, ideal for portable devices.

Surface Mount: YES

With surface mount capability, this product is easy to install and saves space on the PCB, making it suitable for compact designs.

Screening Level: AEC-Q100

The AEC-Q100 screening level ensures high reliability and performance in automotive applications, making this product a reliable choice for automotive electronics.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient utilization of board space, making this product suitable for applications with limited space availability.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode offers flexible access times and simplifies interfacing with other components, making this product versatile and easy to integrate into various systems.

Input/Output Type: COMMON

The common input/output type simplifies the design process and enhances compatibility with other components, making this product a convenient choice for system integration.

Nominal Supply Voltage / Vsup: 3V

The 3V supply voltage ensures low power consumption and compatibility with a wide range of devices, making this product energy-efficient and versatile.

No. of Terminals: 48

The 48 terminals provide ample connectivity options, allowing for easy interfacing with other components and enhancing the versatility of this product.

Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH

The grid array, very thin profile, and fine pitch package style offers high density and reliability, making this product suitable for high-performance applications.

Alternate Memory Width: 8

The alternate memory width of 8 bits provides flexibility in data handling and processing, making this product versatile and adaptable to different requirements.

Technical Specifications

SRAM CY62167G30-45BVXA attributes and parameters. Explore more SRAM devices from Infineon Technologies

Specs

Maximum Access Time:

45 ns

Alternate Memory Width:

8

Input/Output Type:

COMMON

JESD-30 Code:

R-PBGA-B48

JESD-609 Code:

e1

Length:

8 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

48

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1MX16

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA48,6X8,30

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Screening Level:

AEC-Q100

Maximum Seated Height:

1 mm

Maximum Standby Current:

.000016 Amp

Minimum Standby Voltage:

1 V

Maximum Supply Current:

36 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.2 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Width:

6 mm

Trade Compliance

CY62167G30-45BVXA Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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