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CY14V116N-BZ30XIT

Infineon Technologies

CY14V116N-BZ30XIT by Infineon Technologies

Infineon's CY14V116N-BZ30XIT is a 1MX16 SRAM with 30ns access time, operating at 3V. It features a low profile grid array package and CMOS technology. Ideal for industrial applications requiring fast, non-volatile memory with 16-bit width.

Median Price

$77.175

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$77.175

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300

$77.175

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Vyrian

USA . 578 parts In-Stock

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578

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Digiode

USA . 380 parts In-Stock

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380

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 228 parts In-Stock

1+ parts

$3.173

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228

$3.173

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Corohmni

South Africa . 621 parts In-Stock

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$3.655

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621

$3.655

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Modulus Dynamics

Lithuania . 3,270 parts In-Stock

1+ parts

$4.031

100+ parts

$3.870

1k+ parts

$3.709

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3,270

$4.031

$3.870

$3.709

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Ampacity Inc.

Singapore . 306 parts In-Stock

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$5.000

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306

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AZTECH Wire

Italy . 334 parts In-Stock

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$17.306

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334

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Continental Prestige Electronics

USA . 865 parts In-Stock

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$77.175

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$75.632

865

$77.175

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$75.632

Netroflash

USA . 100 parts In-Stock

1+ parts

$77.175

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100

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Argo Parts USA

USA . 1,518 parts In-Stock

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Corphita

USA . 273 parts In-Stock

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273

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Overview

Experience unparalleled performance and reliability with the CY14V116N-BZ30XIT by Infineon Technologies. As a leading manufacturer in the industry, Infineon Technologies ensures top-notch quality in their products. This SRAM device offers seamless operation in various applications, thanks to its advanced technology and industrial-grade design. With a memory density of 16,777,216 bits and lightning-fast access time of 30 ns, this non-volatile SRAM is perfect for your high-speed data processing needs. Trust in the CY14V116N-BZ30XIT to deliver exceptional value and benefits to meet your demanding requirements.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body provides durability and protection for the SRAM.

Nominal Supply Voltage (Vsup): 3V

Operating at a nominal supply voltage of 3V ensures efficient performance and compatibility with various systems.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for faster data access and processing, enhancing overall speed and efficiency.

Memory IC Type: NON-VOLATILE SRAM

Being non-volatile, this SRAM retains data even when power is turned off, making it ideal for applications requiring data persistence.

Maximum Operating Temperature: 85°C

With a high maximum operating temperature, this SRAM can withstand harsh environmental conditions, ensuring reliability in diverse applications.

Technical Specifications

SRAM CY14V116N-BZ30XIT attributes and parameters. Explore more SRAM devices from Infineon Technologies

Specs

Maximum Access Time:

30 ns

JESD-30 Code:

R-PBGA-B165

JESD-609 Code:

e1

Length:

17 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

165

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.4 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Width:

15 mm

Trade Compliance

CY14V116N-BZ30XIT Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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