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IDT71V67803S133PFGI8

Renesas Electronics

IDT71V67803S133PFGI8 by Renesas Electronics

The Renesas Electronics IDT71V67803S133PFGI8 is a 512Kx18 CACHE SRAM with synchronous operation at 133 MHz clock frequency. It has a low profile flatpack package, operates at industrial temperature grade, and features 3-STATE output characteristics. Ideal for applications requiring fast access times and high memory density.

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< 1k

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Vyrian

USA . 563 parts In-Stock

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Nova Conductors

Japan . 34 parts In-Stock

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Ampacity Inc.

Singapore . 166 parts In-Stock

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$9.000

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AZTECH Wire

Italy . 718 parts In-Stock

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$14.655

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Argo Parts USA

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Continental Prestige Electronics

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Bastille Electronics

Australia . 100 parts In-Stock

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Overview

Enhance your electronic projects with the IDT71V67803S133PFGI8 by Renesas Electronics, a top-tier manufacturer known for its high-quality SRAM products. This CACHE SRAM chip offers outstanding performance and reliability in various industrial applications. With a maximum clock frequency of 133 MHz and a memory density of 9437184 bits, this IC provides fast access times and efficient data storage capabilities. Upgrade your systems today with the cutting-edge technology and superior value that Renesas Electronics brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is commonly used for electronic components due to its durability and resistance to heat and chemicals.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for data to be transferred in sync with a clock signal, ensuring accurate and reliable performance.

Nominal Supply Voltage / Vsup (V): 3.3

This voltage is common in many electronic devices, making it compatible with a wide range of systems.

Maximum Clock Frequency (fCLK): 133 MHz

The high clock frequency allows for fast data processing and efficient operation.

Memory IC Type: CACHE SRAM

A cache SRAM is known for its high-speed data access, making it ideal for applications requiring quick data retrieval.

Technical Specifications

SRAM IDT71V67803S133PFGI8 attributes and parameters. Explore more SRAM devices from Renesas Electronics

Specs

Maximum Access Time:

4.2 ns

Additional Features:

PIPELINED ARCHITECTURE

Maximum Clock Frequency (fCLK):

133 MHz

Input/Output Type:

COMMON

JESD-30 Code:

R-PQFP-G100

JESD-609 Code:

e3

Length:

20 mm

Memory Density:

9437184 bit

Memory IC Type:

Memory Width:

18

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

100

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX18

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP100,.63X.87

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.6 mm

Maximum Standby Current:

.07 Amp

Minimum Standby Voltage:

3.14 V

Sub-Category:

SRAMs

Maximum Supply Current:

280 mA

Maximum Supply Voltage (Vsup):

3.465 V

Minimum Supply Voltage (Vsup):

3.135 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

14 mm

Trade Compliance

IDT71V67803S133PFGI8 Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Renesas Electronics

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