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CY7C1079DV33-12BAXIT

Infineon Technologies

CY7C1079DV33-12BAXIT by Infineon Technologies

Infineon's CY7C1079DV33-12BAXIT is a 3.3V SRAM with 4MX8 organization, 12ns access time, and 48 terminals in a thin profile grid array package. Ideal for industrial applications requiring fast and reliable parallel memory storage with common I/O type and 3-state output characteristics.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

< 1k

Distributors (In-Stock)

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Vyrian

USA . 579 parts In-Stock

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579

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Digiode

USA . 288 parts In-Stock

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288

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Nova Conductors

Japan . 82 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 636 parts In-Stock

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$2.577

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636

$2.577

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Aztec Data Supply Inc.

USA . 1,572 parts In-Stock

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$2.810

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$2.810

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Modulus Dynamics

Lithuania . 4,595 parts In-Stock

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$3.229

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$3.100

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$2.971

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4,595

$3.229

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$2.971

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AZTECH Wire

Italy . 875 parts In-Stock

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$7.049

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875

$7.049

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Ampacity Inc.

Singapore . 1,177 parts In-Stock

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$16.000

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$16.000

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Semicontronic

India . 616 parts In-Stock

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$19.000

100+ parts

$18.525

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$18.430

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616

$19.000

$18.525

$18.430

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Microchip USA

USA . 1,642 parts In-Stock

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$189.578

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Argo Parts USA

USA . 4,484 parts In-Stock

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Bastille Electronics

Australia . 600 parts In-Stock

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600

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Corphita

USA . 460 parts In-Stock

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460

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Continental Prestige Electronics

USA . 300 parts In-Stock

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Overview

Unlock the power of reliable memory solutions with the CY7C1079DV33-12BAXIT from Infineon Technologies. As a leading manufacturer in the industry, Infineon Technologies ensures top-notch quality and performance in their SRAM products. Ideal for industrial applications, this standard SRAM offers a memory density of 33554432 bits and a maximum access time of 12 ns. With a nominal supply voltage of 3.3V and a compact package style, this memory IC provides customers with a high-performance solution that delivers value and efficiency. Experience seamless operation and enhanced productivity with the CY7C1079DV33-12BAXIT - a reliable choice for your memory needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, ensuring longevity of the product.

Surface Mount: YES

Surface mount technology allows for easy and efficient installation of the product on circuit boards, saving time and effort.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a standard supply voltage of 3.3V ensures compatibility with a wide range of systems and devices.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, this product can withstand harsh environmental conditions or prolonged use without overheating.

Memory Width: 8

Having a memory width of 8 bits allows for efficient storage and retrieval of data in parallel, enhancing the overall performance of the product.

Technology: CMOS

CMOS technology ensures low power consumption and high noise immunity, making the product energy-efficient and reliable.

Maximum Access Time: 12 ns

A fast maximum access time of 12 nanoseconds means that data can be retrieved quickly, leading to smoother operation and improved user experience.

Technical Specifications

SRAM CY7C1079DV33-12BAXIT attributes and parameters. Explore more SRAM devices from Infineon Technologies

Specs

Maximum Access Time:

12 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PBGA-B48

JESD-609 Code:

e1

Length:

9.5 mm

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

48

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

4MX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA48,6X8,30

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.05 Amp

Minimum Standby Voltage:

2 V

Sub-Category:

SRAMs

Maximum Supply Current:

250 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

CY7C1079DV33-12BAXIT Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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