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CAT24C44VI-G

Onsemi

CAT24C44VI-G by Onsemi

CAT24C44VI-G by Onsemi is a non-volatile SRAM with 256-bit memory density. It operates at a nominal voltage of 5V and has a max access time of 375ns. This small outline package is commonly used in industrial applications requiring synchronous operation and reliable data storage.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Digiode

USA . 2,117 parts In-Stock

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Vyrian

USA . 577 parts In-Stock

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Nova Conductors

Japan . 500 parts In-Stock

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500

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Aztec Data Supply Inc.

USA . 207 parts In-Stock

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$4.010

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Advanced Electronics

New Zealand . 450 parts In-Stock

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$4.032

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$3.831

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AZTECH Wire

Italy . 577 parts In-Stock

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$7.021

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Semicontronic

India . 269 parts In-Stock

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$16.000

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$15.600

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$15.520

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QUARKTWIN TECHNOLOGY LTD

USA . 21,293 parts In-Stock

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TANS Electronics

Latvia . 7,298 parts In-Stock

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Continental Prestige Electronics

USA . 3,495 parts In-Stock

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Argo Parts USA

USA . 3,474 parts In-Stock

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SupplyDigital Components

Austria . 2,842 parts In-Stock

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Kulean Microsystems

USA . 1,914 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 893 parts In-Stock

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Problanco Electronics

Mexico . 427 parts In-Stock

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Corohmni

South Africa . 411 parts In-Stock

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Microchip USA

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Bastille Electronics

Australia . 10 parts In-Stock

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Overview

Experience superior performance and reliability with the CAT24C44VI-G by Onsemi! As a leading manufacturer in the industry, Onsemi delivers products of exceptional quality. This small outline non-volatile SRAM offers numerous advantages for various applications. With its high-speed synchronous operation and wide temperature range, it ensures seamless functionality in industrial environments. The CAT24C44VI-G guarantees excellent value, providing customers with reliable memory storage and efficient data access. Say goodbye to worries about data loss and embrace the benefits and advantages this product brings to your projects. Trust Onsemi for all your memory needs!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body makes the product lightweight and durable, ideal for portable applications.

Surface Mount: YES

Being surface mountable allows for easy and efficient installation on PCBs, saving space and simplifying assembly processes.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures precise and coordinated data transfers, enhancing overall system performance.

Nominal Supply Voltage (Vsup): 5V

Operating at a standard 5V supply voltage ensures compatibility with a wide range of systems and components.

Memory Density: 256 bit

With a high memory density of 256 bits, this SRAM chip offers ample storage capacity for data-intensive applications.

Technical Specifications

SRAM CAT24C44VI-G attributes and parameters. Explore more SRAM devices from Onsemi

Specs

Maximum Access Time:

375 ns

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.9 mm

Memory Density:

256 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

16 words

No. of Words Code:

16

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16X16

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Maximum Standby Current:

.00003 Amp

Sub-Category:

SRAMs

Maximum Supply Current:

3 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

3.9 mm

Trade Compliance

CAT24C44VI-G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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