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Onsemi SRAM 28

SRAM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Total Dose (V) Width
N02L63W3AT25I by Onsemi

N02L63W3AT25I

Onsemi

N02L63W3AT25I by Onsemi is a 128Kx16 SRAM with 131072 words, operating at 2.5/3.3V. It features a max access time of 70ns and industrial temperature grade, suitable for applications requiring fast and reliable memory storage in compact electronic devices.

70 ns

COMMON

R-PDSO-G44

e3

18.41 mm

2097152 bit

STANDARD SRAM

16

1

1

44

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX16

3-STATE

PLASTIC/EPOXY

LSSOP

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

PARALLEL

2.5/3.3

Not Qualified

1.25 mm

.00001 Amp

1.8 V

SRAMs

16 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.8 mm

DUAL

10.16 mm

N01L63W2AT25I by Onsemi

N01L63W2AT25I

Onsemi

N01L63W2AT25I by Onsemi is a 64KX16 SRAM with 3V nominal voltage, operating in industrial temperature range. It features 70ns max access time, 3-STATE output characteristics, and common input/output type. Ideal for applications requiring fast and reliable memory storage in compact electronic devices.

70 ns

COMMON

R-PDSO-G44

18.41 mm

1048576 bit

STANDARD SRAM

16

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

LSSOP

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

PARALLEL

3/3.3

Not Qualified

1.25 mm

.00001 Amp

1.8 V

SRAMs

14 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

10.16 mm

N04L63W2AB27I by Onsemi

N04L63W2AB27I

Onsemi

N04L63W2AB27I by Onsemi is a 256Kx16 SRAM with 3-STATE output, operating at 3V. It features a low profile grid array package and operates in industrial temperature range. Ideal for applications requiring fast access times and high memory density.

70 ns

COMMON

R-PBGA-B48

8 mm

4194304 bit

STANDARD SRAM

16

1

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

3/3.3

Not Qualified

1.34 mm

.00001 Amp

1.8 V

SRAMs

16 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

6 mm

N04L63W2AT27IT by Onsemi

N04L63W2AT27IT

Onsemi

N04L63W2AT27IT by Onsemi is a 256Kx16 SRAM with 3-STATE output, operating at 3V. It features a small outline package and operates in industrial temperature range. Ideal for applications requiring fast access time and low standby current.

70 ns

COMMON

R-PDSO-G44

18.41 mm

4194304 bit

STANDARD SRAM

16

1

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

LSSOP

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

PARALLEL

3/3.3

Not Qualified

1.25 mm

.00001 Amp

1.8 V

SRAMs

16 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

10.16 mm

N04L63W2AT27I by Onsemi

N04L63W2AT27I

Onsemi

N04L63W2AT27I by Onsemi is a 256Kx16 SRAM with 3-STATE output, operating at 3V. It features a small outline package, suitable for industrial applications. With a max access time of 70ns and low standby current of 0.00001A, it offers reliable memory storage in various electronic devices.

70 ns

COMMON

R-PDSO-G44

18.41 mm

4194304 bit

STANDARD SRAM

16

1

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

LSSOP

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

PARALLEL

3/3.3

Not Qualified

1.25 mm

.00001 Amp

1.8 V

SRAMs

16 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

10.16 mm

N25S818HAS21I by Onsemi

N25S818HAS21I

Onsemi

N25S818HAS21I by Onsemi is a 32Kx8 SRAM with 16MHz clock frequency, operating at -40 to 85°C. It features separate I/O, 1.8V supply voltage, and 3-STATE output. Ideal for industrial applications requiring high-speed synchronous memory in a small outline package.

16 MHz

SEPARATE

R-PDSO-G8

e3

4.9 mm

262144 bit

STANDARD SRAM

8

3

1

1, (3 LINE)

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

1.8

Not Qualified

1.75 mm

.0000005 Amp

1.7 V

SRAMs

10 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

30

3.91 mm

N25S818HAT21I by Onsemi

N25S818HAT21I

Onsemi

N25S818HAT21I by Onsemi is a 32KX8 SRAM with 1.8V supply, operating at -40 to 85 °C. It features synchronous mode, 16 MHz clock frequency, and 0.65mm terminal pitch. Ideal for industrial applications requiring high-speed memory with low power consumption.

16 MHz

SEPARATE

R-PDSO-G8

e3

4.4 mm

262144 bit

STANDARD SRAM

8

3

1

1, (3 LINE)

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

1.8

Not Qualified

1.1 mm

.0000005 Amp

1.7 V

SRAMs

10 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

30

3 mm

N01L83W2AN25I by Onsemi

N01L83W2AN25I

Onsemi

N01L83W2AN25I by Onsemi is a 128Kx8 SRAM with 3.6V max supply voltage, operating at -40 to 85 °C. It features a small outline package, 0.5mm terminal pitch, and 70ns access time. Ideal for industrial applications requiring fast and reliable memory storage in compact spaces.

70 ns

COMMON

R-PDSO-G32

11.8 mm

1048576 bit

STANDARD SRAM

8

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP32,.56,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3/3.3

Not Qualified

1.25 mm

.00001 Amp

1.8 V

SRAMs

14 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

8 mm

N01L83W2AT25I by Onsemi

N01L83W2AT25I

Onsemi

N01L83W2AT25I by Onsemi is a 128Kx8 SRAM with 3-STATE output, operating at 3V. It features a small outline package, suitable for industrial applications. With a max access time of 70ns and low standby current, it's ideal for high-speed memory requirements.

70 ns

COMMON

R-PDSO-G32

18.4 mm

1048576 bit

STANDARD SRAM

8

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3/3.3

Not Qualified

1.25 mm

.00001 Amp

1.8 V

SRAMs

14 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

8 mm

N02L63W3AB25IT by Onsemi

N02L63W3AB25IT

Onsemi

Onsemi's N02L63W3AB25IT is a 128KX16 SRAM with 3-STATE output, operating at 2.5/3.3V. It features a low profile grid array package suitable for industrial applications, offering fast access time of 70ns and memory density of 2097152 bits.

70 ns

COMMON

R-PBGA-B48

8 mm

2097152 bit

STANDARD SRAM

16

1

48

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX16

3-STATE

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

2.5/3.3

Not Qualified

1.34 mm

.00001 Amp

1.8 V

SRAMs

16 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

6 mm

N02L63W3AB25I by Onsemi

N02L63W3AB25I

Onsemi

N02L63W3AB25I by Onsemi is a 128Kx16 SRAM with 70ns access time, operating at 2.5/3.3V. It features a low profile grid array package and supports asynchronous operation. Ideal for industrial applications requiring fast and reliable memory storage in compact designs.

70 ns

COMMON

R-PBGA-B48

8 mm

2097152 bit

STANDARD SRAM

16

1

48

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX16

3-STATE

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

2.5/3.3

Not Qualified

1.34 mm

.00001 Amp

1.8 V

SRAMs

16 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

6 mm

N02L63W3AT25IT by Onsemi

N02L63W3AT25IT

Onsemi

N02L63W3AT25IT by Onsemi is a 128KX16 SRAM with 131072 words, operating at 2.5/3.3V. It features a small outline package, -40 to 85 °C temperature range, and 70ns access time. Ideal for industrial applications requiring fast and reliable memory storage in compact designs.

70 ns

COMMON

R-PDSO-G44

18.41 mm

2097152 bit

STANDARD SRAM

16

1

44

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX16

3-STATE

PLASTIC/EPOXY

LSSOP

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

PARALLEL

2.5/3.3

Not Qualified

1.25 mm

.00001 Amp

1.8 V

SRAMs

16 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

10.16 mm

N64S830HAS22I by Onsemi

N64S830HAS22I

Onsemi

N64S830HAS22I by Onsemi is an 8KX8 SRAM with 3-STATE output, operating at 20 MHz clock frequency. It has a memory density of 65536 bit and operates at industrial temperature grade. Ideal for applications requiring fast synchronous memory access in compact designs.

20 MHz

SEPARATE

R-PDSO-G8

e3

4.9 mm

65536 bit

STANDARD SRAM

8

3

1

1, (3 LINE)

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2.5/3.3

Not Qualified

1.75 mm

.000004 Amp

2.3 V

SRAMs

10 mA

3.6 V

2.5 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

30

3.9 mm

N64S830HAT22I by Onsemi

N64S830HAT22I

Onsemi

N64S830HAT22I by Onsemi is an 8Kx8 SRAM with 3.6V max supply voltage, 20MHz clock frequency, and -40 to 85°C operating temperature range. Ideal for industrial applications requiring fast synchronous memory access in a compact 0.65mm pitch package.

20 MHz

SEPARATE

R-PDSO-G8

e3

4.4 mm

65536 bit

STANDARD SRAM

8

3

1

1, (3 LINE)

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

SERIAL

260

2.5/3.3

Not Qualified

1.2 mm

.000004 Amp

2.3 V

SRAMs

10 mA

3.6 V

2.5 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

30

3 mm

N02L83W2AN25IT by Onsemi

N02L83W2AN25IT

Onsemi

N02L83W2AN25IT by Onsemi is a 256Kx8 SRAM with 3-STATE output, operating at 3V. It features a small outline, thin profile package and operates in industrial temperature range. Ideal for applications requiring fast access times and low standby current.

70 ns

COMMON

R-PDSO-G32

11.8 mm

2097152 bit

STANDARD SRAM

8

1

32

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP32,.56,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3/3.3

Not Qualified

1.25 mm

.00001 Amp

1.8 V

SRAMs

16 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

8 mm

N02L83W2AN25I by Onsemi

N02L83W2AN25I

Onsemi

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 32; Package Code: TSOP1; Package Shape: RECTANGULAR; No. of Words Code: 256K;

70 ns

COMMON

R-PDSO-G32

11.8 mm

2097152 bit

STANDARD SRAM

8

1

32

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP32,.56,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3/3.3

Not Qualified

1.25 mm

.00001 Amp

1.8 V

SRAMs

16 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

8 mm

N02L83W2AT25I by Onsemi

N02L83W2AT25I

Onsemi

N02L83W2AT25I by Onsemi is a 256Kx8 SRAM with 70ns access time, operating at 3V. It features a small outline package and operates in industrial temperature range. Ideal for applications requiring fast and reliable data storage in harsh environments.

70 ns

COMMON

R-PDSO-G32

18.4 mm

2097152 bit

STANDARD SRAM

8

1

32

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3/3.3

Not Qualified

1.25 mm

.00001 Amp

1.8 V

SRAMs

16 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

8 mm

N08L63W2AB27I by Onsemi

N08L63W2AB27I

Onsemi

Onsemi's N08L63W2AB27I is a 512Kx16 SRAM with 3-STATE output, operating at 2.5/3.3V. It features a thin profile grid array package suitable for industrial applications requiring fast access times of 85ns and low standby current of 0.00001Amp.

85 ns

COMMON

R-PBGA-B48

10 mm

8388608 bit

STANDARD SRAM

16

1

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

2.5/3.3

Not Qualified

1.2 mm

.00001 Amp

1.8 V

SRAMs

15 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

8 mm

N25S830HAS22I by Onsemi

N25S830HAS22I

Onsemi

N25S830HAS22I by Onsemi is a 32KX8 SRAM with synchronous operation and 3-STATE output. It operates at 3V, has a clock frequency of 20MHz, and is ideal for industrial applications requiring high-speed memory access in small outline packages.

20 MHz

SEPARATE

R-PDSO-G8

e3

4.9 mm

262144 bit

STANDARD SRAM

8

3

1

1, (3 LINE)

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/3.3

Not Qualified

1.75 mm

.000004 Amp

2.7 V

SRAMs

10 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

30

3.91 mm

N25S830HAT22I by Onsemi

N25S830HAT22I

Onsemi

N25S830HAT22I by Onsemi is a 32KX8 SRAM with 3-STATE output, operating at 20 MHz. Ideal for industrial applications, it features a supply voltage of 2.7-3.6V and operates in synchronous mode with separate I/O type. Package style is small outline, thin profile, shrink pitch, making it suitable for compact designs.

20 MHz

SEPARATE

R-PDSO-G8

e3

4.4 mm

262144 bit

STANDARD SRAM

8

3

1

1, (3 LINE)

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

3/3.3

Not Qualified

1.1 mm

.000004 Amp

2.7 V

SRAMs

10 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

30

3 mm

N01L63W3AT25IT by Onsemi

N01L63W3AT25IT

Onsemi

N01L63W3AT25IT by Onsemi is a 64KX16 SRAM with 70ns access time, operating at 3V. It features a small outline package and operates in industrial temperature range. Ideal for applications requiring fast and reliable memory storage in harsh environments.

70 ns

COMMON

R-PDSO-G44

18.41 mm

1048576 bit

STANDARD SRAM

16

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

LSSOP

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

PARALLEL

3/3.3

Not Qualified

1.25 mm

.00001 Amp

1.8 V

SRAMs

14 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

10.16 mm

N04L63W1AB27I by Onsemi

N04L63W1AB27I

Onsemi

N04L63W1AB27I by Onsemi is a 256Kx16 SRAM with 3-STATE output, operating at 3V. It features a low profile grid array package and operates in industrial temperature range. Ideal for applications requiring fast access times and high memory density.

70 ns

COMMON

R-PBGA-B48

8 mm

4194304 bit

STANDARD SRAM

16

1

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

3/3.3

Not Qualified

1.34 mm

.00001 Amp

1.8 V

SRAMs

16 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

6 mm

N04L63W1AT27I by Onsemi

N04L63W1AT27I

Onsemi

N04L63W1AT27I by Onsemi is a 256Kx16 SRAM with 3-STATE output, operating at 3V. It features a small outline package, suitable for industrial applications. With a max access time of 70ns and low standby current of 0.00001A, it offers reliable memory storage in various electronic devices.

70 ns

COMMON

R-PDSO-G44

18.41 mm

4194304 bit

STANDARD SRAM

16

1

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

LSSOP

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

PARALLEL

3/3.3

Not Qualified

1.25 mm

.00001 Amp

1.8 V

SRAMs

16 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

10.16 mm

N08L6182AB7I by Onsemi

N08L6182AB7I

Onsemi

N08L6182AB7I by Onsemi is a 512Kx16 SRAM with 85ns access time, operating at 1.8V. It features a thin profile grid array package suitable for industrial applications requiring fast and reliable memory storage in common asynchronous mode.

85 ns

COMMON

R-PBGA-B48

10 mm

8388608 bit

STANDARD SRAM

16

1

1

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

1.8/2

Not Qualified

1.2 mm

.00001 Amp

1.2 V

SRAMs

14 mA

2.2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

8 mm

N64S818HAS21I by Onsemi

N64S818HAS21I

Onsemi

N64S818HAS21I by Onsemi is an 8KX8 SRAM with 16 MHz clock frequency, 1.8V supply, and -40 to 85 °C operating range. Ideal for industrial applications requiring small outline package and separate I/O type in a synchronous mode setup.

16 MHz

SEPARATE

R-PDSO-G8

e3

4.9 mm

65536 bit

STANDARD SRAM

8

3

1

1, (3 LINE)

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

1.8

Not Qualified

1.75 mm

.0000005 Amp

1.7 V

SRAMs

10 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

30

3.91 mm

N64S818HAT21I by Onsemi

N64S818HAT21I

Onsemi

N64S818HAT21I by Onsemi is an 8KX8 SRAM with 16 MHz clock frequency, 1.8V supply voltage, and -40 to 85 °C operating temperature range. Ideal for industrial applications requiring fast synchronous memory access in a compact 0.65mm pitch package.

16 MHz

SEPARATE

R-PDSO-G8

e3

4.4 mm

65536 bit

STANDARD SRAM

8

3

1

1, (3 LINE)

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

1.8

Not Qualified

1.1 mm

.0000005 Amp

1.7 V

SRAMs

10 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

30

3 mm

CAT24C44VI-T3 by Onsemi

CAT24C44VI-T3

Onsemi

CAT24C44VI-T3 by Onsemi is a 256-bit non-volatile SRAM with 16x16 organization. Operating at 5V, it has a max standby current of 0.00003A and operates in industrial temperature range (-40 to 85°C). Ideal for applications requiring small outline packages and synchronous operation.

R-PDSO-G8

e3

4.9 mm

256 bit

NON-VOLATILE SRAM

16

1

1

8

16 words

16

SYNCHRONOUS

85 Cel

-40 Cel

16X16

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

5

Not Qualified

1.75 mm

.00003 Amp

SRAMs

3 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN

GULL WING

1.27 mm

DUAL

30

3.9 mm

N01S818HAT22I by Onsemi

N01S818HAT22I

Onsemi

N01S818HAT22I by Onsemi is a 128KX8 SRAM with synchronous operation. It features a small outline, thin profile package and operates in industrial temperature range (-40 to 85 °C). Ideal for applications requiring high-speed memory access in compact electronic devices.

R-PDSO-G8

e3

4.4 mm

1048576 bit

STANDARD SRAM

8

3

1

8

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

1.1 mm

2.2 V

1.7 V

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

30

3 mm