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N02L63W3AT25IT

Onsemi

N02L63W3AT25IT by Onsemi

N02L63W3AT25IT by Onsemi is a 128KX16 SRAM with 131072 words, operating at 2.5/3.3V. It features a small outline package, -40 to 85 °C temperature range, and 70ns access time. Ideal for industrial applications requiring fast and reliable memory storage in compact designs.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

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Digiode

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AZTECH Wire

Italy . 345 parts In-Stock

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$16.680

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TANS Electronics

Latvia . 8,034 parts In-Stock

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Kulean Microsystems

USA . 6,731 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,123 parts In-Stock

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Kepictronics

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Problanco Electronics

Mexico . 4,389 parts In-Stock

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SupplyDigital Components

Austria . 3,574 parts In-Stock

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UHIMA Technologies

Türkiye . 904 parts In-Stock

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Perfect Parts

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Corphita

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Corohmni

South Africa . 148 parts In-Stock

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Microchip USA

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Overview

Elevate your electronic projects with the N02L63W3AT25IT by Onsemi, a top-tier SRAM memory chip that delivers unparalleled quality and reliability. Manufactured by the industry leader Onsemi, this chip boasts a wide range of applications in various devices. Offering a nominal supply voltage of 3V and power supplies of 2.5/3.3V, this chip provides customers with efficient and seamless performance. With 128Kx16 organization and 131072 words, this memory chip ensures high-speed data access and storage capabilities. Trust the N02L63W3AT25IT to bring your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is known for its durability and resistance to heat and moisture, making the product suitable for a wide range of operating conditions.

Surface Mount: YES

Being surface mountable allows for easy and efficient integration onto circuit boards, saving space and simplifying the manufacturing process.

Nominal Supply Voltage / Vsup (V): 3

Operating at a nominal supply voltage of 3V makes the product compatible with a variety of systems and power sources.

No. of Terminals: 44

Having a high number of terminals enables the product to interface with other components and devices effectively, enhancing its versatility.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, the product can withstand elevated environmental conditions, increasing its reliability and longevity.

Memory Density: 2097152 bit

The high memory density allows for storing a large amount of data, making the product suitable for applications that require extensive memory capacity.

Maximum Access Time: 70 ns

The fast access time ensures quick retrieval of data, making the product ideal for high-performance operations that demand rapid data access.

Technical Specifications

SRAM N02L63W3AT25IT attributes and parameters. Explore more SRAM devices from Onsemi

Specs

Maximum Access Time:

70 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G44

Length:

18.41 mm

Memory Density:

2097152 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

44

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP44,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Parallel or Serial:

PARALLEL

Power Supplies (V):

2.5/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.25 mm

Maximum Standby Current:

.00001 Amp

Minimum Standby Voltage:

1.8 V

Sub-Category:

SRAMs

Maximum Supply Current:

16 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Width:

10.16 mm

Trade Compliance

N02L63W3AT25IT Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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