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N02L1618C1AB2-85I

Onsemi

N02L1618C1AB2-85I by Onsemi

N02L1618C1AB2-85I by Onsemi is a 128KX16 SRAM with 3-STATE output, operating at 1.8V, suitable for industrial applications. It features a low profile grid array package with 0.75mm terminal pitch and 85ns max access time. Ideal for high-speed parallel memory operations in harsh environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,245 parts In-Stock

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Digiode

USA . 700 parts In-Stock

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700

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Problanco Electronics

Mexico . 5,527 parts In-Stock

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TANS Electronics

Latvia . 2,300 parts In-Stock

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Kulean Microsystems

USA . 2,284 parts In-Stock

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SupplyDigital Components

Austria . 1,882 parts In-Stock

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Corphita

USA . 1,276 parts In-Stock

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UHIMA Technologies

Türkiye . 911 parts In-Stock

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Corohmni

South Africa . 456 parts In-Stock

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Overview

Enhance your electronics projects with the N02L1618C1AB2-85I by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality SRAM memory solutions that are versatile and reliable. Ideal for industrial applications, this memory chip offers fast access times and low standby currents, ensuring optimal performance for your devices. With a wide operating temperature range and compact design, the N02L1618C1AB2-85I provides exceptional value and efficiency for all your memory needs. Elevate your projects with this powerful and innovative product from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable plastic/epoxy material ensures the package can withstand various environmental conditions, making it a reliable choice.

Surface Mount: YES

Allows for easy installation on PCBs, saving time and effort during assembly.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for faster data access and transfer speeds, increasing overall performance.

Nominal Supply Voltage / Vsup (V): 1.8

Low power consumption at a nominal voltage of 1.8V, making it energy-efficient.

No. of Words: 131072 words

Large memory capacity of 131072 words, providing ample storage for data-intensive applications.

Memory Width: 16

Wider memory width of 16 bits allows for faster data processing and access.

Maximum Access Time: 85 ns

Quick access time of 85ns ensures fast read/write operations, enhancing overall system performance.

Technical Specifications

SRAM N02L1618C1AB2-85I attributes and parameters. Explore more SRAM devices from Onsemi

Specs

Maximum Access Time:

85 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PBGA-B48

JESD-609 Code:

e1

Length:

8 mm

Memory Density:

2097152 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

48

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA48,6X8,30

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Power Supplies (V):

1.8/2

Qualification:

Not Qualified

Maximum Seated Height:

1.34 mm

Maximum Standby Current:

.00001 Amp

Minimum Standby Voltage:

1.2 V

Sub-Category:

SRAMs

Maximum Supply Current:

3 mA

Maximum Supply Voltage (Vsup):

2.2 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Width:

6 mm

Trade Compliance

N02L1618C1AB2-85I Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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