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SN74LS189AN

Texas Instruments

SN74LS189AN by Texas Instruments

SN74LS189AN by Texas Instruments is a 16x4 SRAM with 3-STATE output. It operates asynchronously at temperatures ranging from 0 to 70°C. Ideal for commercial applications, this TTL technology memory IC has a max access time of 80ns and uses parallel terminal form.

Median Price

$11.540

Lifecycle Status

Suppliers In-Stock

19

In-Stock Inventory

1k+

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Component Electronics Inc.

Canada . 221 parts In-Stock

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$11.540

100+ parts

$8.650

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$7.500

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Vyrian

USA . 7,333 parts In-Stock

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Nova Conductors

Japan . 700 parts In-Stock

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Digiode

USA . 663 parts In-Stock

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663

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LWI Electronics Inc

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Sinequanon

UK . 125 parts In-Stock

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Bristol Electronics

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Atlantic Semiconductor

USA . 95 parts In-Stock

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Sea View Technologies

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Prism Electronics

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Fibra_Brandt Electronic GMBH

Germany . 59 parts In-Stock

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Zilex Electronics Inc.

Canada . 50 parts In-Stock

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GSS - Global Semi Support

USA . 26 parts In-Stock

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Amar Radio Corporation

India . 21 parts In-Stock

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EMSNET

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Mentor Electronics Marketing, LLC

USA . 5 parts In-Stock

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ComSIT Distribution GmbH

Germany . 5 parts In-Stock

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LittleDiode

UK . 4 parts In-Stock

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Electronic Expediters

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Distributors (Availability)

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Parana Technologies

USA . 1,435 parts In-Stock

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$1.825

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$2.377

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$1.825

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DigiPath Technology Company

USA . 1,807 parts In-Stock

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$2.010

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1,807

$2.010

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ChromeModa Solutions

Germany . 5,410 parts In-Stock

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$2.051

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$1.682

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$2.051

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IDEA Electronic Components Group

UK . 1,256 parts In-Stock

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$2.051

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$1.846

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Corohmni

South Africa . 662 parts In-Stock

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$2.404

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662

$2.404

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AZTECH Wire

Italy . 564 parts In-Stock

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$7.693

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Semicontronic

India . 1,616 parts In-Stock

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$11.000

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$10.725

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$10.670

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One Stop Electronics

USA . 657 parts In-Stock

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$29.000

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Ampacity Inc.

Singapore . 1,344 parts In-Stock

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Continental Prestige Electronics

USA . 3,211 parts In-Stock

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Argo Parts USA

USA . 1,216 parts In-Stock

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Modulus Dynamics

Lithuania . 900 parts In-Stock

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Corphita

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Perfect Parts

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Bastille Electronics

Australia . 10 parts In-Stock

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Overview

Discover the reliability and performance of the SN74LS189AN by Texas Instruments, a top-notch SRAM memory IC that offers seamless operation and high-speed data access. With its durable plastic/epoxy package body and 16x4 organization, this product is perfect for a wide range of applications. Enjoy the benefits of its 3-STATE output characteristics and efficient parallel operation, all backed by Texas Instruments' renowned quality and expertise. Upgrade your systems with this innovative solution and experience enhanced functionality and efficiency like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the SRAM, ensuring long-term reliability.

Package Shape: RECTANGULAR

Allows for easy integration and placement within electronic circuits or systems.

Operating Mode: ASYNCHRONOUS

Enables faster data transfer without the need for a clock signal, making it suitable for real-time applications.

No. of Terminals: 16

Simplifies the connection of the SRAM to other components in a circuit, reducing complexity and potential points of failure.

Package Style (Meter): IN-LINE

Facilitates easy installation and replacement of the SRAM in electronic devices.

Maximum Operating Temperature: 70 °C

Ensures the SRAM can function reliably in a wide range of operating environments.

Organization: 16X4

Provides a balance between capacity and performance, suitable for a variety of applications.

Output Characteristics: 3-STATE

Allows multiple devices to share a common bus without interference, enhancing system flexibility.

Minimum Operating Temperature: 0 °C

Ensures the SRAM can operate in colder temperatures without performance degradation.

Temperature Grade: COMMERCIAL

Suitable for standard commercial applications where temperature variations are moderate.

Technology: TTL

Provides compatibility with TTL logic levels, making it easy to integrate with existing circuitry.

Parallel or Serial: PARALLEL

Enables simultaneous data transfer for faster read and write operations, ideal for high-speed applications.

Terminal Form: THROUGH-HOLE

Simplifies soldering and connection to a circuit board, ensuring secure and reliable electrical connections.

No. of Words: 16 words

Offers sufficient memory capacity for storing and accessing data in various applications.

Memory Width: 4

Provides a balance between data storage capacity and access speed, suitable for a range of computing tasks.

Terminal Pitch: 2.54 mm

Allows for easy connection to standard PCB layouts, making integration into electronic systems straightforward.

No. of Words Code: 16

Indicates the number of addressable memory locations, providing flexibility for data storage and retrieval.

Memory IC Type: STANDARD SRAM

Uses industry-standard SRAM technology, ensuring compatibility and ease of integration in a variety of electronic systems.

Maximum Access Time: 80 ns

Provides fast read and write access to stored data, essential for high-performance computing applications.

Technical Specifications

SRAM SN74LS189AN attributes and parameters. Explore more SRAM devices from Texas Instruments

Specs

Maximum Access Time:

80 ns

JESD-30 Code:

R-PDIP-T16

Memory IC Type:

Memory Width:

4

No. of Terminals:

16

No. of Words:

16 words

No. of Words Code:

16

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

16X4

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Sub-Category:

SRAMs

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

SN74LS189AN Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

NSN

5962-01-295-6508, 5962012956508

NIIN

012956508

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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