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SN74172J

Texas Instruments

SN74172J by Texas Instruments

SN74172J by Texas Instruments is a 16-bit multi-port SRAM with 8x2 organization and synchronous operation. It operates at 5V, has 24 terminals in an in-line package style, and supports 3-state output characteristics. Ideal for applications requiring fast and efficient memory access in commercial temperature environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,725 parts In-Stock

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4,725

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Vyrian

USA . 3,468 parts In-Stock

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3,468

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Electronic Expediters

USA . 149 parts In-Stock

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149

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Prism Electronics

USA . 5 parts In-Stock

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5

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One Stop Electronics

USA . 1,250 parts In-Stock

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$1.000

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1,250

$1.000

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Parana Technologies

USA . 1,636 parts In-Stock

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$4.875

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$5.402

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1,636

$4.875

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$5.402

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DigiPath Technology Company

USA . 1,370 parts In-Stock

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$5.367

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1,370

$5.367

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ChromeModa Solutions

Germany . 6,698 parts In-Stock

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$5.477

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$4.491

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6,698

$5.477

$4.491

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IDEA Electronic Components Group

UK . 546 parts In-Stock

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$5.477

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$4.929

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546

$5.477

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$4.929

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AZTECH Wire

Italy . 296 parts In-Stock

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$17.732

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296

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Corphita

USA . 3,731 parts In-Stock

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3,731

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Perfect Parts

USA . 6 parts In-Stock

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Overview

Unlock the power of reliable data storage with the SN74172J by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments ensures top-notch quality and innovation in their products. The SN74172J is a versatile multi-port SRAM that offers seamless operation and high performance in synchronous mode. From industrial automation to telecommunications, this 16-bit memory IC is perfect for various applications. Experience the value and benefits of this premium product, designed to meet your needs with precision and efficiency.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The use of ceramic and glass-sealed materials ensures durability and protection for the memory IC, making it reliable for long-term use.

Operating Mode: SYNCHRONOUS

Allows for data transfers to happen at fixed intervals, ensuring reliable and consistent performance.

Nominal Supply Voltage / Vsup (V): 5

Operates efficiently at a standard voltage level, making it compatible with various systems.

Maximum Operating Temperature: 70 °C

Capable of operating at high temperatures, ensuring stability and performance under demanding conditions.

Organization: 8X2

Provides a total of 16 memory bits organized in a convenient layout, suitable for various applications.

Minimum Operating Temperature: 0 °C

Offers reliable performance even at low temperatures, ensuring functionality in different environments.

Technology: CMOS

The use of CMOS technology results in low power consumption and high speed operation, making it energy-efficient and fast.

Memory Width: 2

The memory IC has a width of 2 bits, providing flexibility and efficiency in data storage and retrieval.

Memory Density: 16 bit

Offers a high memory density of 16 bits, allowing for the storage of larger amount of data in a compact format.

Memory IC Type: MULTI-PORT SRAM

Being a multi-port SRAM, it allows for multiple simultaneous read and write operations, enhancing overall performance and efficiency.

Technical Specifications

SRAM SN74172J attributes and parameters. Explore more SRAM devices from Texas Instruments

Specs

JESD-30 Code:

R-GDIP-T24

Memory Density:

16 bit

Memory IC Type:

Memory Width:

2

No. of Functions:

1

No. of Ports:

3

No. of Terminals:

24

No. of Words:

8 words

No. of Words Code:

8

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

8X2

Output Characteristics:

3-STATE

Output Enable:

NO

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Sub-Category:

SRAMs

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SN74172J Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

NSN

5962-01-030-2097, 5962010302097

NIIN

010302097

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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