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IDT71V416S12PHGI8

Renesas Electronics

IDT71V416S12PHGI8 by Renesas Electronics

The Renesas Electronics IDT71V416S12PHGI8 is a 256Kx16 SRAM with 12ns access time, operating at 3.3V. It features a small outline package suitable for industrial applications. With parallel operation and 4194304-bit memory density, it offers fast and reliable data storage solutions.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

Distributors (In-Stock)

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Vyrian

USA . 697 parts In-Stock

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697

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Nova Conductors

Japan . 300 parts In-Stock

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300

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Distributors (Availability)

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Corohmni

South Africa . 17 parts In-Stock

1+ parts

$2.342

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17

$2.342

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AZTECH Wire

Italy . 559 parts In-Stock

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$9.420

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559

$9.420

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Ampacity Inc.

Singapore . 173 parts In-Stock

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$11.000

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173

$11.000

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Semicontronic

India . 458 parts In-Stock

1+ parts

$27.000

100+ parts

$26.325

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$26.190

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458

$27.000

$26.325

$26.190

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Continental Prestige Electronics

USA . 3,682 parts In-Stock

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3,682

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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Argo Parts USA

USA . 1,146 parts In-Stock

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Bastille Electronics

Australia . 35 parts In-Stock

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Overview

Experience unmatched performance and reliability with the IDT71V416S12PHGI8 by Renesas Electronics. Renowned for their superior quality and cutting-edge technology, Renesas Electronics has crafted a high-quality SRAM that delivers outstanding results in a variety of applications. Whether you're looking to enhance the speed and efficiency of your industrial equipment or optimize the performance of your networking devices, this product offers unmatched value, benefits, and advantages. Trust Renesas Electronics to provide you with the innovative solutions you need to stay ahead of the competition.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the product suitable for various applications.

Surface Mount: YES

Allows for easy and secure mounting on circuit boards, saving space and facilitating assembly.

Operating Mode: ASYNCHRONOUS

Enables independent operation of the memory without the need for synchronization signals, increasing flexibility.

Nominal Supply Voltage / Vsup (V): 3.3

Operates at a common voltage level, ensuring compatibility with a wide range of systems.

No. of Terminals: 44

Provides sufficient connectivity options for interfacing with other components and external devices.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, making it suitable for industrial applications.

Memory IC Type: STANDARD SRAM

Utilizes a well-established memory type known for its reliability and fast access times.

Technical Specifications

SRAM IDT71V416S12PHGI8 attributes and parameters. Explore more SRAM devices from Renesas Electronics

Specs

Maximum Access Time:

12 ns

JESD-30 Code:

R-PDSO-G44

JESD-609 Code:

e3

Length:

18.41 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

44

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256KX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Width:

10.16 mm

Trade Compliance

IDT71V416S12PHGI8 Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

PCN

Manufacturer Highlights

Renesas Electronics

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